Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-Type Bi2Te3 Films

2012 ◽  
Vol 185 ◽  
pp. 94-98
Author(s):  
Arina ◽  
Fan Shermin Chow Hui ◽  
Banu Abdul Bari Shamira ◽  
Ai Lin Chia ◽  
Ye Ko San ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Process Parameters ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Characterization Methods ◽  
Force Microscopy ◽  
Atomic Force ◽  
Argon Flow ◽  
P Type

Thermoelectric is an ever evolving field that serves many critical needs (cooling and power generation) in the industry. The key objective of this work is to fabricate Bismuth Telluride (Bi2Te3) thin-films by varying the various process parameters using a radio-frequency (RF) magnetron sputtering disposition technique. Characterization methods such as four point probe resistivity, surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), Seebeck coefficient and thermal diffusivity are performed on the N and P-type Bi2Te3films. The samples are analysed for their electrical properties in relation to the evolved microstructures, for how the process parameters of sputtering and annealing affect these changes. The results demonstrate that N-Type film (S2) processed using sputtering parameters of 7mT, 100W, 50sccm of argon flow under room temperature for 30mins with no annealing and the P-Type film processed using sputtering parameters of 7mT, 100W, 60sccm under room temperature for 30mins with institute annealing at 200°C for 2h exhibit desirable thermoelectric properties suitable for cooling application in microelectronic and optoelectronic devices, optimizing their performance and reliability.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Surface Morphology of Seeded Nanostructured ZnO on Silicon by Sol-Gel Technique

2013 ◽  
Vol 667 ◽  
pp. 265-271 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Aziz ◽  
Mohamad Rusop Mahmood ◽  
Saifollah Abdullah
Keyword(s):  
Surface Morphology ◽  
Room Temperature ◽  
Sol Gel ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
Scanning Electron Microscopic ◽  
Gel Technique ◽  
P Type

Nanostructured ZnO as a seeded was prepared by sol-gel technique on p-type silicon in various low molarities. Zinc acetate, Diethanolamine (DEA), and isopropyl were use as starting material, stabilizer, and solvent respectively. Atomic Force Microscopy (AFM) analysis shows smooth surface and uniform layer were produced in low molarities of precursor. The surface morphology of nanostructured ZnO was analyzed by Field Emission Scanning Electron Microscopic (FESEM). It is found that the nanostructured ZnO were successfully deposited on the silicon substrate with size ~10 nm to ~35 nm. Photoluminescence spectroscopy was employed to study the band gap in room temperature. It shows that very low intensity of PL in 0.05m and 0.1 m. PL intensity become more obvious starting from 0.15 m of precursor concentration.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

scholarly journals Structure and composition of soils

2010 ◽  
Vol 4 (4) ◽  
pp. 259-263 ◽  
Author(s):  
Snezana Nenadovic ◽  
Milos Nenadovic ◽  
Ljiljana Kljajevic ◽  
Vladimir Pavlovic ◽  
Aleksandar Djordjevic ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Porous Structure ◽  
X Ray Diffraction ◽  
Scanning Electronic Microscopy ◽  
Electronic Microscopy ◽  
Characterization Methods ◽  
Soil Particles ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

This paper presents a study of soils structure and composition using up to date technique, such as scanning electronic microscopy, atomic force microscopy, X-ray diffraction, X-ray fluorescence, as well as some other characterization methods. It was shown that soil particles have porous structure and dimensions in the range from several millimeters to several hundreds of nanometers and consist of different minerals such as kaolin, quartz and feldspate.

CRYSTAL STRUCTURE AND GAS SENSING PROPERTIES OF Cu-DOPED ZINC OXIDE

2002 ◽  
Vol 16 (01n02) ◽  
pp. 314-321 ◽  
Author(s):  
CHIN HOCK ONG ◽  
JIAN HUI WANG ◽  
HAO GONG ◽  
H. S. O. CHAN
Keyword(s):  
Zinc Oxide ◽  
Structural Properties ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Residual Strains ◽  
Nano Crystal

Copper doped Zinc Oxide thin films are prepared by RF magnetron sputtering. The films are characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and other techniques. It is found that the films are composed of nano-crystal grains with typical columnar structure. The structural properties, such as preferred orientation, residual strains exist in the films, and grains size were studied. Moreover, the porous structure that related with the surface morphology of the films was discussed as it has relationship with the gas sensing property. Gas sensing property of these films was studied with the understanding of structural properties. The films were tested with NO gas. The sensitivity of the films was studied through the discussions of films structures.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

MBE GROWN ZnSSe/ZnMgSSe MQW STRUCTURE FOR BLUE VCSEL

2007 ◽  
Vol 06 (05) ◽  
pp. 407-410 ◽  
Author(s):  
I. P. KAZAKOV ◽  
V. I. KOZLOVSKY ◽  
V. P. MARTOVITSKY ◽  
YA. K. SKASYRSKY ◽  
M. D. TIBERI ◽  
...  
Keyword(s):  
Room Temperature ◽  
Structure Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Optical Scanning ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Two Phases

ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.

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