Room-Temperature Ferromagnetism in (III,Mn)Sb Semiconductors
Keyword(s):
X Ray
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t is reported about fabrication by laser deposition in a gaseous environment of epitaxial layers of ferromagnetic semiconductors GaMnSb and InMnSb. Investigations of x-ray diffraction and Raman scattering showed reasonably good crystal quality of GaMnSb and InMnSb layers. Magnetic properties were investigated by magneto-optical transversal Kerr effect and Hall effect. It is established, that GaMnSb layers are ferromagnetic at room temperature. In contrast, InMnSb samples demonstrate the ferromagnetic properties only at low temperatures (< 70 K).