TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application

2014 ◽  
Vol 219 ◽  
pp. 217-220 ◽  
Author(s):  
Hua Cui
Keyword(s):  
Aspect Ratio ◽  
Metal Deposition ◽  
Formulation Development ◽  
Chemical Cleaning ◽  
Residue Removal ◽  
Profile Control ◽  
Cu Interconnect ◽  
Tin Metal ◽  
Technology Nodes ◽  
Low K

TiN metal hardmask has been used to improve etch selectivity to low-k materials and thereby gain better profile control. For 14 nm and smaller technology nodes, it is required that the TiN hardmask is completely removed in order to improve the aspect ratio for subsequent reliable metal deposition. Thus, a chemical cleaning formulation with high TiN etch selectivity toward Cu and low-k is required.

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme

2012 ◽  
Vol 187 ◽  
pp. 241-244 ◽  
Author(s):  
Hua Cui ◽  
Martine Claes ◽  
Samuel Suhard
Keyword(s):  
Etch Rate ◽  
Room Temperature ◽  
Complete Removal ◽  
Cleaning Process ◽  
Residue Removal ◽  
Tin Metal ◽  
User Friendly ◽  
Low K ◽  
Etch Residue

A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100 Å/min at 50°C. The chemicals are compatible with Cu and low-k materials, and are suitable for Cu dual damascene interconnect 28 nm and smaller technology node applications. The chemicals offer a route to in situ controlled TiN pullback or even complete removal of the TiN mask during the cleaning process in single wafer tool applications. The chemicals do not contain NH4OH or TMAH and so are very user-friendly.

The Risk of Pattern Collapse for Structures in Future Logic Devices

2012 ◽  
Vol 195 ◽  
pp. 107-109 ◽  
Author(s):  
M. Sankarapandian ◽  
B. Peethala ◽  
D. Canaperi ◽  
Daniel Peter ◽  
Philipp Engesser ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Titanium Nitride ◽  
Length Scale ◽  
Mems Devices ◽  
Drying Process ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Collapse Behavior ◽  
Technology Nodes ◽  
Low K

Pattern collapse has long been known in photoresist patterning where the resist patterns merge or collapse during rinsing and drying steps [. The forces responsible for this collapse were identified as capillary forces during the drying process. Structures such as titanium nitride DRAM cylinders [ and silicon Flash shallow trench isolation (STI) lines have also been observed to be pattern collapse sensitive due to increase in aspect ratio of the features. Micro-electromechanical systems (MEMS) devices also show a similar phenomenon, but on a larger length scale, and is referred to as stiction [. For the technology nodes <14 nm, back-end-of-line (BEOL) low-k structures are also on the verge to show pattern collapse behavior. Whether a structure is sensitive to pattern collapse or not depends on several parameters, which will be analyzed in this paper.

scholarly journals Formulation Development of High Strength Gel System and Evaluation on Profile Control Performance for High Salinity and Low Permeability Fractured Reservoir

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Chengli Zhang ◽  
Guodong Qu ◽  
Guoliang Song
Keyword(s):  
High Salinity ◽  
Crosslinking Agent ◽  
High Strength ◽  
Gel Strength ◽  
Water Flooding ◽  
Low Permeability ◽  
Control Performance ◽  
Formulation Development ◽  
Profile Control ◽  
Gel System

For the large pores and cracks of reservoirs with low temperatures, high salinity, and low permeability, a new type of high strength gel ABP system is developed in this paper. The defects of conventional gels such as weak gel strength, no gelling, and easy dehydration are overcome under the conditions of low temperature and high salinity. The temperature and salt resistance, plugging characteristics, and EOR of the gel system are studied. Under the condition of 32°C and 29500 mg/L salinity, the ABP system formulation is for 0.3% crosslinking agent A + 0.09% coagulant B + 3500 mg/L polymer solution P. The results show that when the temperature was increased, the delayed crosslinking time of the system was shortened and the gel strength was increased. The good plugging characteristics of the ABP system were reached, and the plugging rate was greater than 99% in cores with different permeability. A good profile control performance was achieved, and the recovery rate was improved by 19.27% on the basis of water flooding. In the practical application of the gel system, the salinity of formation water and the permeability of fractures are necessary to determine the appropriate formulation.

Expanding the boundaries of metal deposition: High aspect ratio silver nanoplatelets created by merging nanobelts

2018 ◽  
Vol 264 ◽  
pp. 233-243 ◽  
Author(s):  
Falk Muench ◽  
Alexander Vaskevich ◽  
Ronit Popovitz-Biro ◽  
Tatyana Bendikov ◽  
Yishay Feldman ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Metal Deposition

Role of high aspect-ratio thin-film metal deposition in Cu back-end-of-line technology

2020 ◽  
Vol 38 (5) ◽  
pp. 053402
Author(s):  
Andrew Simon ◽  
Oscar van der Straten ◽  
Nicholas A. Lanzillo ◽  
Chih-Chao Yang ◽  
Takeshi Nogami ◽  
...  
Keyword(s):  
Thin Film ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Metal Deposition ◽  
Line Technology

Qualification of Resist Strip Process for Ultra Low-k/Cu Interconnect

2005 ◽  
pp. 345-348
Author(s):  
Han Xu ◽  
Amy Shen ◽  
Vlad Tarasov ◽  
Brian White ◽  
Josh Wolf
Keyword(s):  
Cu Interconnect ◽  
Low K

Wetting Challenges in Cleaning of High Aspect Ratio Nano-Structures

2012 ◽  
Vol 195 ◽  
pp. 235-238 ◽  
Author(s):  
Xiu Mei Xu ◽  
Guy Vereecke ◽  
Erik van den Hoogen ◽  
Jens Smeers ◽  
Silvia Armini ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
New Technology ◽  
Critical Issue ◽  
Silicon Substrates ◽  
Wetting Properties ◽  
Nano Structures ◽  
Wet Processing ◽  
Semiconductor Fabrication ◽  
Technology Nodes

In semiconductor fabrication, pattern collapse of high aspect ratio structures after wet processing has been a critical issue and attracted a lot of interest. On the other hand, very little attention is spent on the potential wetting issues as feature dimensions are continuously scaled down and novel materials with different wetting properties are used in new technology nodes. In this work we investigate the wettability of nanopatterned silicon substrates with different surface modifications.

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