Structural and Electro-Physical Properties of ZnO Films, Obtained by a MOCVD Method on Glass and Silicon Substrates

2015 ◽  
Vol 230 ◽  
pp. 205-210 ◽  
Author(s):  
K.A. Avramenko ◽  
Nina N. Roshchina ◽  
G.P. Olkhovik ◽  
Petro S. Smertenko ◽  
Lyudmyla V. Zavyalova
Keyword(s):  
Electrical Transport ◽  
Electronic Devices ◽  
Zno Films ◽  
Silicon Substrates ◽  
Transport Mechanisms ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray ◽  
Current Voltage ◽  
Structural And Electrical Properties

This paper reports on the ZnO film structures obtained by MOCVD method from acetylacetonate of zinc and diethyldithiocarbamate of zinc on silicon substrates at 280-320 оС substrate. The structural, emitting and transport properties of the ZnO films were examined by X-ray diffraction, Scanning electronic microscopy, Photoluminescent microscopy and Current-Voltage methods. The electrical transport mechanisms were analyzed on the base of differential and injection approaches. The ZnO/Si structure with ZnO film obtained was found to be appropriate for use in electronic devices due to their structural and electrical properties.

STRUCTURAL AND ELECTRICAL PROPERTIES OF RF MAGNETRON SPUTTERED TANTALUM OXIDE FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 749-753
Author(s):  
S. V. JAGADEESH CHANDRA ◽  
D. S. PARK ◽  
S. UTHANNA ◽  
CHEL-JONG CHOI ◽  
A. GURUVA REDDY
Keyword(s):  
Tantalum Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Current Voltage Characteristics ◽  
P Type

RF magnetron sputtering technique was employed for deposition of tantalum oxide films on p-type silicon substrates by sputtering of pure tantalum oxide target in the presence of oxygen and argon gases at a temperature of 303 K. X-ray photoelectron spectroscopic and X-ray diffraction studies indicated that the films annealed at 773 K were stoichiometric and polycrystalline respectively. The accumulation capacitance for the devices in a structure of Al/Ta2O5/p-Si has been decreased noticeably lower values for the devices annealed at high temperatures. Improved current–voltage characteristics were observed for all annealed devices with Poole–Frenkel conduction mechanism.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Non-Stoichiometry and Structure of SrCe1-xYbxO3 Perovskite-Type Oxides

1996 ◽  
Vol 453 ◽  
Author(s):  
Igor Kosacki ◽  
Mark Shumsky ◽  
Harlan U. Anderson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Structural Properties ◽  
Electrical Transport ◽  
Structural Disorder ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Perovskite Type

AbstractThe structural and electrical properties of SrCe1-xYbxO3 ceramics have been studied as a function of temperature and Yb-concentration using x-ray diffraction and impedance techniques. The influence of Yb-dopants on electrical transport and structural disorder has been studied. A correlation between the structural properties, electrical conductivity is observed and discussed. These measurements allow us to determine the mechanism of charge carrier compensation and also the concentration and mobility of the electrical species.

scholarly journals Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Guoqiang Li ◽  
Bingyang Sun ◽  
Yali Wang ◽  
Zhou Wu ◽  
Weifeng Zhang
Keyword(s):  
Photocatalytic Activity ◽  
Pulsed Laser ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Laser Deposition ◽  
Surface Conductance ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
X Ray

The oriented (002) ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002) ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.

UV photoconductors based on Ga-doped ZnO films

2005 ◽  
Vol 891 ◽  
Author(s):  
Leelaprasanna J. Mandalapu ◽  
Faxian Xiu ◽  
Zheng Yang ◽  
Jianlin Liu
Keyword(s):  
Uv Light ◽  
Zno Films ◽  
Metal Contacts ◽  
X Ray Diffraction ◽  
Detection Capability ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Voltage Dependent ◽  
20 Nm ◽  
Secondary Ion

ABSTRACTGa-doped n-type ZnO films were grown by molecular-beam epitaxy (MBE) on R-plane sapphire substrates. Material characterizations such as photoluminescence (PL), X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and Hall measurements were carried out to characterize the optical, structural, and electrical properties of the film. Photoconductor devices for ultraviolet (UV) light detection were fabricated by depositing Al (250 nm)/Ti (20 nm) ohmic metal contacts. Linear characteristics were obtained from current-voltage (I-V) measurements that showed response to UV and visible illumination. Voltage dependent photocurrent (PC) spectra and responsivity spectrum were obtained to characterize the detection capability of the device in the UV region.

scholarly journals ZnO Film Photocatalysts

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Bosi Yin ◽  
Siwen Zhang ◽  
Dawei Zhang ◽  
Yang Jiao ◽  
Yang Liu ◽  
...  
Keyword(s):  
Waste Water ◽  
Zno Films ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
Zno Film ◽  
High Quality ◽  
X Ray ◽  
Photodegradation Efficiency ◽  
Hydrothermal Approach ◽  
Scanning Electron

We have synthesized high-quality, nanoscale ultrathin ZnO films at relatively low temperature using a facile and effective hydrothermal approach. ZnO films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy, photoluminescence spectra (PL), and UV-vis absorption spectroscopy. The products demonstrated 95% photodegradation efficiency with Congo red (CR) after 40 min irradiation. The photocatalytic degradation experiments of methyl orange (MO) and eosin red also were carried out. The results indicate that the as-obtained ZnO films might be promising candidates as the excellent photocatalysts for elimination of waste water.

The Structural and Optical Properties of(Cu, Al):ZnO Films

2013 ◽  
Vol 641-642 ◽  
pp. 547-550 ◽  
Author(s):  
Ying Xiang Yang ◽  
Hong Lin Tan ◽  
Cheng Lin Ni ◽  
Chao Xiang
Keyword(s):  
Optical Properties ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Grain Sizes ◽  
Doped Zno

Un-doped and (Cu, Al)-doped ZnO thin films were prepared by sol-gel spin coating technique on glass substrate. The effect of(Cu, Al)incorporation on the structural, morphological and optical properties of the Zinc oxide (ZnO)film was investigated by means of X-ray diffraction, scanning electron microscopy and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with increasing of (Cu, Al) dopants amount in ZnO films.

X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Oxide Films ◽  
Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

Transverse Electrical Transport in Pentacene Photodiodes

2005 ◽  
Vol 871 ◽  
Author(s):  
Cristobal Voz ◽  
Joaquim Puigdollers ◽  
Marta Fonrodona ◽  
Isidro Martin ◽  
Albert Orpell ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Localised States ◽  
Excitonic States

AbstractThe microstructure of pentacene thin films deposited by thermal evaporation is studied by X-ray diffraction. The transmittance of these films evidences different molecular orbital levels and their related excitonic states. Pentacene photodiodes have been also fabricated on ITO-coated glass substrates with aluminium top electrodes. The current voltage characteristics of such devices are discussed paying special attention to the strongly marked space-charge limited regime. This has been related to trapping in an exponential distribution of localised states in the gap of pentacene. The analysis of the characteristic offers valuable information about such distribution of traps. Finally, the external-quantum-efficiency of these photodiodes shows antibatic features, which evidence the importance of excitonic states in the photovoltaic conversion in pentacene.

scholarly journals Investigation of electrical and structural properties of Ag/TiO2/n-InP/Au Schottky diodes with different thickness TiO2 interface

2021 ◽  
Author(s):  
Ahmet Kürşat Bilgili ◽  
Rabia Çağatay ◽  
Mustafa Kemal Öztürk ◽  
Metin Özer
Keyword(s):  
Schottky Diodes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage ◽  
Two Samples ◽  
Structural And Electrical Properties ◽  
Ideal Diode ◽  
Conclusion Section ◽  
Different Thickness

Abstract In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO2 interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.

Sign in / Sign up

Export Citation Format

Share Document