Growth Temperature Dependence of Sol-Gel Spin Coated Indium Nitride Thin Films

The study highlights the effects of growth temperatures ranging from 500 to 650 °C on the properties of indium nitride (InN) thin films prepared by sol-gel spin coating method followed by nitridation, also, the growth mechanism was studied in depth. The findings revealed that the InN crystal growth was promoted at the growth temperature of 600 °C, by which the crystalline quality of the deposited thin films was improved and the densely packed InN grains were formed. However, thermal decomposition of InN was observed at increasing temperature to 650 °C. Apart from that, the infrared (IR) reflectance measurement shows the presence of transverse and longitudinal-optical phonon modes of wurtzite structure InN. These vibrational modes were found to be slightly shifted from the theoretical values as a result of the incorporation of oxygen contamination in the deposited thin films.

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Effects of Nitridation Temperatures on Gallium Nitride Thin Films Formed on Silicon Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.895.57 ◽

2014 ◽

Vol 895 ◽

pp. 57-62

Author(s):

Chee Yong Fong ◽

Sha Shiong Ng ◽

Fong Kwong Yam ◽

Abu Hassan Haslan ◽

Hassan Zainuriah

Keyword(s):

Thin Films ◽

Optimal Growth ◽

Longitudinal Optical ◽

Longitudinal Optical Phonon ◽

Silicon Substrates ◽

Phonon Modes ◽

Si Substrates ◽

Coating Method ◽

Nitridation Temperature

In this article, GaN thin films were successfully grown onp-type silicon (p-Si) substrates with orientation (100) through spin coating method followed by nitridation in ammonia ambient at various temperatures (750 °C, 850 °C, and 950 °C). The morphology of the GaN thin films were performed by using field-emission scanning electron microscopy. The results showed that the grain size increases with increasing nitridation temperature from 750 °C to 950 °C. Optical analysis of the GaN thin films was performed using Fourier transform infrared spectroscopy. It was confirmed from the results that the reflectance intensity of the transverse optical and longitudinal optical phonon modes of wurtzite GaN increases with increasing nitridation temperature. All the measured results show that nitridation temperature plays a very important role in improving the quality of the GaN thin films. Finally, the results revealed that the 950 °C was the optimal growth nitridation temperature for synthesizing GaN thin film.

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Effect of Cd Substitution on Structural and Optical Properties of Zn1-xCdxSe Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1039.382 ◽

2021 ◽

Vol 1039 ◽

pp. 382-390

Author(s):

Arej Kadhim ◽

Mustafa Kadhim ◽

Haslan Abu Hassan

Keyword(s):

Thin Film ◽

Thin Films ◽

Longitudinal Optical ◽

Raman Shift ◽

Longitudinal Optical Phonon ◽

Phonon Modes ◽

Elemental Ratios ◽

X Ray ◽

Cdse Thin Film ◽

Yellow Region

In this research, Zn1-xCdxSe alloys (x from 0 to 1) were synthesized by solid-state microwave (SSM) method of producing thermally evaporated thin films. The cubic structure and the elemental ratios of the films were studied using X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy. The optical characterizations of the as-deposited film in terms of the energy band gap (Eg), photoluminescence (PL), and Raman shift spectra were conducted at the room temperature. The Eg values for the thin films from ZnSe to CdSe were 3.4 to 1.7 eV, respectively. The PL orange emission for ZnSe thin film at 565 nm, whereas 590 nm in the yellow region for CdSe thin film. From Raman shift spectra, the two longitudinal-optical phonon modes (1LO and 2LO) at 240, and 490 cm-1 are assigned for the ZnSe and CdSe thin films.

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Effect of Nitrogen Gas on the Growth of Magnesium Doped Indium Nitride Thin Films via Sol-gel Spin Coating Method

Journal of Physics Conference Series ◽

10.1088/1742-6596/1083/1/012061 ◽

2018 ◽

Vol 1083 ◽

pp. 012061

Author(s):

H.S. Lee ◽

S.S. Ng ◽

F.K. Yam

Keyword(s):

Thin Films ◽

Spin Coating ◽

Indium Nitride ◽

Sol Gel ◽

Nitrogen Gas ◽

Spin Coating Method ◽

Coating Method

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Annealing-induced effects on structural and optical properties of Cd1−xZnxS thin films for optoelectronic applications

Materials Science-Poland ◽

10.1515/msp-2015-0096 ◽

2015 ◽

Vol 33 (4) ◽

pp. 677-684 ◽

Cited By ~ 2

Author(s):

M. Zakria ◽

Taj Muhammad Khan ◽

Abbas Nasir ◽

Arshad Mahmood

Keyword(s):

Thin Films ◽

Blue Shift ◽

Ambient Air ◽

Longitudinal Optical ◽

Hexagonal Structure ◽

Longitudinal Optical Phonon ◽

X Ray Diffraction ◽

Phonon Modes ◽

Different Temperatures ◽

Xrd Studies

AbstractCd1−xZnxS thin films of variable compositions (x = 0.2, 0.4, 0.6, 0.8) were deposited on glass at room temperature by thermal evaporation process. The prepared samples were annealed at two different temperatures (300 °C, 400 °C) for 1 hour in ambient air. The effects of post-annealing on the structural and optical characteristics were investigated using X-ray diffraction (XRD), spectrophotometry, and Raman spectroscopy (RS) methods. XRD studies suggested that the annealed and as-deposited samples belong to wurtzite structure for all Zn concentrations with a preferential orientation along (002) plane. Spectrophotometry analysis of the samples revealed that the energy band gap decreased with annealing temperature. RS investigated different phonon bands and crystalline phases. Two longitudinal optical phonon modes (1-LO, 2-LO) corresponding to monophase hexagonal structure were observed for all Cd1−xZnxS samples. The observed red-shift and anti-symmetrical nature of the 1-LO phonon mode can be associated with annealing, while the overall blue-shift, except for x ⩽ 0.6, was caused by the structural disorders in periodic Cd atomic sub-lattices and broken translational symmetry. The spectroscopic results were strengthened by the XRD studies and their results are consistent.

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Aluminum Nitride Thin Films Grown by Sol-Gel Spin Coating Technique

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.290.137 ◽

2019 ◽

Vol 290 ◽

pp. 137-141

Author(s):

Nurul Atikah Mohd Isa ◽

Sha Shiong Ng ◽

Zainuriah Hassan

Keyword(s):

Thin Films ◽

Optical Properties ◽

Surface Morphology ◽

Aluminum Nitride ◽

Spin Coating ◽

Sol Gel ◽

Phonon Modes ◽

Coating Films ◽

Coating Method ◽

P Type

In this study, aluminum nitride (AlN) thin films were grown on p-type silicon (100) substrate by sol-gel spin coating method. Two types of ethanol-based precursors were prepared, namely, precursors with and without the aid of diethanolamine (DEA). The objective of this work is to investigate the effects of the DEA on the surface morphology, structural and optical properties of the deposited thin films. The coating films were undergone nitridation process under ammonia ambient at 1100 °C for 60 min. The surface morphology and structural properties of the deposited AlN thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD results revealed that both samples have AlN (100) preferred orientation. In addition, the crystallinity of sample without the aid of DEA is higher compared to the sample prepared with DEA. While, the AFM results showed that both samples have uniform and smooth surface. The optical properties of AlN thin films was investigated by Raman spectroscopy. For sample without DEA, Raman results showed the present of wurtzite AlN characteristics phonon modes of E2(high) and A1(LO) at 660 cm-1 and 892 cm-1, respectively. Whereas only E2(high) is observed for sample with the aid of DEA. Finally, all the results revealed that the present of DEA has a strong influence on the properties of deposited AlN thin films and film prepared without DEA have better quality.

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