An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000388-000393
Author(s):  
Dominique Bergogne ◽  
Fabien Dubois ◽  
Christian Martin ◽  
Khalil El Falahi ◽  
Luong Viet Phung ◽  
...  
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Power Converter ◽  
Nano Crystalline ◽  
Three Phase ◽  
Power Switches ◽  
Core Components ◽  
Power Inductors ◽  
Bus Voltage ◽  
Electro Magnetic

Normally-On Silicon Carbide (SiC) JFETs are good candidates for power switches in high temperature applications, in Three-Phase Voltage-Fed Inverters used to drive Electro-Mechanical Actuators (EMA) for the more electrical aircraft where the ambient varies from −55 °C to 200 °C. The power of the EMA is in the 1 to 5 kW range, the DC bus voltage is 540 V. It is also necessary to implement passive subsystems such as Electro-Magnetic-Interference (EMI) filters, power inductors, transformers, packaging and interconnection solution that withstand the wide temperature range. The gate driver for normally-On devices must include a safe solution against short-circuit in the event of a power supply failure. The experimental converter is built using engineering samples such as SiC JFETs, SOI drivers and laboratory made components such as inductive wire wound, nano-crystalline core components, SOI integrated driver, assembled with a high temperature package and technology. Finally, the Smart EMA test bench is presented.

A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000349-000354
Author(s):  
Liang Zuo ◽  
S. K. Islam ◽  
M. A. Huque ◽  
C. Su ◽  
B. J. Blalock ◽  
...  
Keyword(s):  
High Temperature ◽  
Ambient Temperature ◽  
Low Cost ◽  
Short Circuit ◽  
High Volume ◽  
Power Converter ◽  
Power Devices ◽  
Power Semiconductor ◽  
Environment Temperature ◽  
Power Switches

In recent years, the rapid increase in the market for hybrid electric vehicles has generated great demand for low-cost, high-volume, high-temperature power converters that can work in harsh environment (temperature ≥ 150°C) conditions. Most of the commercially available power semiconductor devices and associated control electronics are rated for maximum of 85°C ambient temperature. Under this circumstance, wide bandgap (WBG) semiconductors have become a better alternative due to their ability to operate at much higher temperatures (≥500°C) than conventional bulk silicon based devices. As with any other power devices, SiC switches also require fault detection and protection mechanisms for their reliable application to real systems. One severe fault situation is the short circuit at the load end, which can cause very high surge currents that flow through the power switches. Quick detection and removal of the short circuit fault current by external circuitry is required to protect the power switch as well as the power converter module. This work presents a high-temperature (≥200°C), high-voltage short circuit protection (SCP) for SiC power devices. The circuit is designed using a resistor sensing method to provide protections for both “normally ON” and “normally OFF” SiC FET switches. A rail-to-rail input comparator is employed to ensure that the circuit operates under different power supply levels. The prototype circuit is implemented using a 0.8-micron, 2-poly, and 3-metal BCD-on-SOI process. The die size for the protection circuit is 0.52 mm2 (845 μm × 612 μm). The circuit has been successfully tested up to 200°C ambient temperature under power supplies ranging from 10 V to 30 V without any heat sink or cooling mechanism.

scholarly journals Asymmetrical ZVS-PWM Switched-Capacitor Based Half-Bridge DC-DC Converter With Switch Peak Voltage of Vin/2

2020 ◽  
Author(s):  
Angelica Paula Caus ◽  
Guilherme Martins Leandro ◽  
Ivo Barbi
Keyword(s):  
Theoretical Analysis ◽  
Power Converter ◽  
Maximum Efficiency ◽  
Switching Frequency ◽  
Switched Capacitor ◽  
Peak Voltage ◽  
Zero Voltage Switching ◽  
Power Switches ◽  
Converter Topology ◽  
Bus Voltage

This paper presents a new power converter topology<br>generated by the integration of the asymmetrical ZVS-PWM dcdc converter with a switched-capacitor ladder-type commutation<br>cell. Circuit operation and theoretical analysis with emphasis on<br>the soft-commutation process are included in the paper. The<br>main advantage of the proposed converter with respect to the<br>conventional asymmetrical half-bridge dc-dc converter is the<br>reduction of the voltage stress across the power switches to the<br>half of the input dc bus voltage, enabling the utilization of lower<br>voltage rating components. Experiments conducted on a<br>laboratory prototype with 1.4 kW power-rating, 800 V input<br>voltage, 48 V output voltage and 100 kHz switching frequency<br>are included, to verify the theoretical analysis and the design<br>methodology. The maximum efficiency of the experimental nonoptimized prototype was 93.6%.<br>Index Terms - Asymmetrical dc-dc converter, pulse-widthmodulation, switched-capacitor, zero voltage switching.<div><br><br></div>

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

scholarly journals Asymmetrical ZVS-PWM Switched-Capacitor Based Half-Bridge DC-DC Converter With Switch Peak Voltage of Vin/2

2020 ◽  
Author(s):  
Angelica Paula Caus
Keyword(s):  
Theoretical Analysis ◽  
Power Converter ◽  
Maximum Efficiency ◽  
Switching Frequency ◽  
Switched Capacitor ◽  
Peak Voltage ◽  
Zero Voltage Switching ◽  
Power Switches ◽  
Converter Topology ◽  
Bus Voltage

This paper presents a new power converter topology<br>generated by the integration of the asymmetrical ZVS-PWM dcdc converter with a switched-capacitor ladder-type commutation<br>cell. Circuit operation and theoretical analysis with emphasis on<br>the soft-commutation process are included in the paper. The<br>main advantage of the proposed converter with respect to the<br>conventional asymmetrical half-bridge dc-dc converter is the<br>reduction of the voltage stress across the power switches to the<br>half of the input dc bus voltage, enabling the utilization of lower<br>voltage rating components. Experiments conducted on a<br>laboratory prototype with 1.4 kW power-rating, 800 V input<br>voltage, 48 V output voltage and 100 kHz switching frequency<br>are included, to verify the theoretical analysis and the design<br>methodology. The maximum efficiency of the experimental nonoptimized prototype was 93.6%.<br>Index Terms - Asymmetrical dc-dc converter, pulse-widthmodulation, switched-capacitor, zero voltage switching.<div><br><br></div>

scholarly journals Inverter 5-Tingkat Tiga Fasa Empat Kawat menggunakan STM32F407 untuk Catu Daya Mandiri

2021 ◽  
Vol 9 (1) ◽  
pp. 177
Author(s):  
IVANILES PUTRA UTAMA DAGOMIS ◽  
LEONARDUS HERU PRATOMO
Keyword(s):  
Pulse Width Modulation ◽  
Power Converter ◽  
Maximum Power ◽  
Switching System ◽  
Maximum Power Point ◽  
Maximum Power Point Tracker ◽  
Three Phase ◽  
Power Switches ◽  
Power Point ◽  
Sinusoidal Pulse Width Modulation

ABSTRAKSalah satu energi terbarukan adalah pembangkit listrik tenaga surya (PLTS), yang menggunakan photovoltaic (PV) sebagai sarana konversi energi. Untuk mendapatkan daya maksimal, menggunakan konverter DC-DC beralgoritma maximum power point tracker (MPPT). Sistem di Indonesia menggunakan tiga fasa empat kawat (TFEK), sehingga sistem perlu diintegrasi menjadi satu, dikenal dengan nama konversi dua tahap. Masalah yang muncul adalah konverter TFEK lazim diimplementasi menggunakan konverter daya empat lengan, di mana setiap lengannya terdapat dua buah sakelar daya. Hal ini akan mengakibatkan sistem pensaklaran yang tinggi, tapis dan stress tegangan yang besar untuk mendapatkan THD rendah. Oleh karena itu, telah diteliti inverter TFEK menggunakan 5-level inverter. Metode modulasi lebar pulsa digital sinusoidal (MLPDS) digunakan untuk mengendalikan setiap sakelar (IRFP 460) dengan menggunakan mikrokontrol jenis STM32F407. Verifikasi menggunakan perangkat lunak PSIM dan prototype. Berdasarkan hasil pengujian, metode yang dilakukan mampu menghasilkan arus dan tegangan keluaran inverter TFEK dengan THD tegangan sebesar 4,38%.Kata kunci: Inverter 5-tingkat, Tiga fasa empat kawat, STM32F407, THD ABSTRACTOne of the renewable energy is solar power plant (PLTS), which uses photovoltaic (PV) as a means of energy conversion. To get maximum power, use a DC-DC converter with a maximum power point tracker (MPPT). The system in Indonesia uses three-phase four-wires (TPFW), the system needs to be integrated into one, as two-stage conversion. The problem is that TPFW converters are commonly implemented using four-leg power converter, where each leg has two power switches. This will result in high switching system, large filters, and stress voltage to get low THD. Hence, the TPFW inverter 5-level inverter has been investigated. The sinusoidal pulse width modulation (SPWM) method is used to control each switch (IRFP 460) using an STM32F407 microcontroller. Verification with PSIM software and prototype. Based on the results, the method used can produce the current and output voltage of the TPFW inverter with a voltage THD of 4.38%.Keywords: five-level inverter, three-phase four-wire, STM32F407, THD

scholarly journals Simulative investigation of wind turbine gearbox loads during power converter fault

2021 ◽  
Author(s):  
Julian Röder ◽  
Georg Jacobs ◽  
Tobias Duda ◽  
Dennis Bosse ◽  
Fabian Herzog
Keyword(s):  
High Speed ◽  
Short Circuit ◽  
Rotational Velocity ◽  
Power Production ◽  
Power Converter ◽  
Wind Turbine Gearbox ◽  
Three Phase ◽  
Torque Load ◽  
Dynamic Generator ◽  
Component Failures

AbstractThree phase short circuit power converter faults in wind turbines (WT) result in highly dynamic generator torque reversals, which lead to load reversals within the drivetrain. Dynamic load reversals in combination with changing rotational speeds are, for example, critical for smearing within roller bearings. Therefore, an investigation of the correlation between three phase short circuit converter faults and drivetrain component failures is necessary.Due to the risk of damage and the resulting costs, it is not economically feasible to extensively investigate three phase short circuit converter faults on test benches. Valid WT drivetrain models can be used instead. A WT drivetrain model, which has been developed and validated in a national project at the CWD, is used and a three phase short circuit converter fault is implemented. In this paper, the resulting torque load on the drivetrain for a three phase short circuit converter fault in rated power production is presented. This converter fault leads to a highly dynamic reversing electromagnetic torque which exceeds the rated torque by a factor of three. As a result the load on the rotor side high speed shaft (HSS) bearing oscillates and increases by around 15 per cent compared to rated power production. Simultaneously the rotational velocity of the HSS oscillates with an amplitude of 10 rpm. Therefore an increase in the risk of smearing is expected.

scholarly journals Asymmetrical ZVS-PWM Switched-Capacitor Based Half-Bridge DC-DC Converter With Switch Peak Voltage of Vin/2

2020 ◽  
Author(s):  
Angelica Paula Caus ◽  
Guilherme Martins Leandro ◽  
Ivo Barbi
Keyword(s):  
Theoretical Analysis ◽  
Power Converter ◽  
Maximum Efficiency ◽  
Switching Frequency ◽  
Switched Capacitor ◽  
Peak Voltage ◽  
Zero Voltage Switching ◽  
Power Switches ◽  
Converter Topology ◽  
Bus Voltage

This paper presents a new power converter topology<br>generated by the integration of the asymmetrical ZVS-PWM dcdc converter with a switched-capacitor ladder-type commutation<br>cell. Circuit operation and theoretical analysis with emphasis on<br>the soft-commutation process are included in the paper. The<br>main advantage of the proposed converter with respect to the<br>conventional asymmetrical half-bridge dc-dc converter is the<br>reduction of the voltage stress across the power switches to the<br>half of the input dc bus voltage, enabling the utilization of lower<br>voltage rating components. Experiments conducted on a<br>laboratory prototype with 1.4 kW power-rating, 800 V input<br>voltage, 48 V output voltage and 100 kHz switching frequency<br>are included, to verify the theoretical analysis and the design<br>methodology. The maximum efficiency of the experimental nonoptimized prototype was 93.6%.<br>Index Terms - Asymmetrical dc-dc converter, pulse-widthmodulation, switched-capacitor, zero voltage switching.<div><br><br></div>

scholarly journals High-Temperature SOI/SiC-Based DC-DC Converter Suite

2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
Bradley A. Reese ◽  
Brice McPherson ◽  
Robert Shaw ◽  
Jared Hornberger ◽  
Roberto M. Schupbach ◽  
...  
Keyword(s):  
High Temperature ◽  
Duty Cycle ◽  
Feedback Loop ◽  
Design Strategy ◽  
Power Transformers ◽  
Power Switches ◽  
Gate Driver ◽  
Power Inductors ◽  
Effects Of Radiation ◽  
Over Time

A complete design strategy (mechanical and electrical) for a 25 W 28 V/5 V dc-dc converter utilizing SiC and SOI electronics is presented. The converter includes a high-temperature SOI-based PWM controller featuring 150 kHz operation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs, and a bootstrapped high-side gate driver. Several passive technologies were investigated for both control and power sections. Capacitor technologies were characterized over temperature and over time at 300C∘, power inductors designed and tested up to 350C∘, and power transformers designed and tested up to 500C∘. Northrop Grumman normally-off SiC JFETs were used as power switches and were characterized up to 250C∘. Efficiency and mass optimization routines were developed with the data gained from the first prototype. The effects of radiation on SiC and SOI electronics are then discussed. The results of the first prototype module are presented, with operation from 25C∘ up to an ambient temperature of 240C∘.

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