Fatigue-free Samarium-modified Bismuth Titanate Having Large Remanent Polarization and Charge-retaining Ability

Polarization switching and domain dynamics in unpoled and poled crystals of bismuth titanate by applying electric field along the crystallographic c axis were investigated through polarization measurements and domain observations by optical microscope and piezoelectric force microscope. Poled crystals showed a well-saturated polarization hysteresis with a remanent polarization of 4.4 μC/cm2 and a coercive field of 4.7 kV/cm. Domain observations reveal that lenticular domain acts as an initial nucleus during polarization switching. The sidewise motion of the lenticular-domain walls and resultant single domain state were easily established for the poled crystals, while the lenticular domains observed in unpoled crystals were clamped even though a high electric field was applied to them.

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Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.105-106.259 ◽

2010 ◽

Vol 105-106 ◽

pp. 259-262 ◽

Cited By ~ 1

Author(s):

X.A. Mei ◽

Min Chen ◽

A.H. Cai ◽

K.L. Su ◽

Chong Qing Huang ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Rf Magnetron Sputtering ◽

Si Substrates ◽

Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

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Large remanent polarization and small leakage in sol–gel derived Bi(Zn1/2Zr1/2)O3–PbTiO3ferroelectric thin films

Dalton Transactions ◽

10.1039/c2dt31996a ◽

2013 ◽

Vol 42 (2) ◽

pp. 585-590 ◽

Cited By ~ 13

Author(s):

Linxing Zhang ◽

Jun Chen ◽

Hanqing Zhao ◽

Longlong Fan ◽

Yangchun Rong ◽

...

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Sol Gel ◽

Large Remanent Polarization

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Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates

Journal of Materials Research ◽

10.1557/jmr.2001.0431 ◽

2001 ◽

Vol 16 (11) ◽

pp. 3124-3132 ◽

Cited By ~ 33

Author(s):

Uong Chon ◽

Hyun M. Jang ◽

Sun-Hwa Lee ◽

Gyu-Chul Yi

Keyword(s):

Remanent Polarization ◽

Pyrochlore Phase ◽

Random Access ◽

Layered Perovskite ◽

Oriented Growth ◽

Plane Orientation ◽

Amorphous Surface ◽

Ferroelectric Random Access Memories ◽

Large Remanent Polarization ◽

Template Material

Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.

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Ferroelectric Properties of Bismuth Titanate Ceramics by Dy3+/V5+ Substitution

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.412.306 ◽

2011 ◽

Vol 412 ◽

pp. 306-309

Author(s):

Chong Qing Huang ◽

Min Chen ◽

X.A. Mei ◽

Y.H. Sun ◽

J. Liu

Keyword(s):

Coercive Field ◽

Remanent Polarization ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Polycrystalline Structure ◽

Oriented Polycrystalline ◽

Titanate Ceramics

The ferroelectricity of Bi3.25Dy0.75Ti3O12(BDT), and Bi3.25Dy0.75Ti2.97V0.03O12(BDTV) ceramics prepared at 1100°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BDT ceramics are 15 µC/cm2and 64kV/cm, respectively. Furthermore, V substitution improves the Prvalue of the BDT ceramics up to 23 μC/cm2, which is much larger than that of the BDT ceramics. Therefore, co-sustitution of D and V in Bi4Ti3O12(BIT) ceramic is effective for the improvement of its ferroelectricity.

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Ferroelectric Properties of Bismuth Titanate Ceramics by Sm3+/V5+ Substitution

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.280-283.167 ◽

2007 ◽

Vol 280-283 ◽

pp. 167-170

Author(s):

M. Chen ◽

Zu Li Liu ◽

Kai Lun Yao

Keyword(s):

Coercive Field ◽

Remanent Polarization ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Polycrystalline Structure ◽

Co Substitution ◽

Oriented Polycrystalline ◽

Bst Ceramics ◽

Titanate Ceramics

The ferroelectricity of Bi3.2Sm0.8Ti3O12 (BST) and Bi3.2Sm0.8Ti2.97V0.03O12 (BSTV)ceramics prepared at 1100oC by a conventional ceramic technique is investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BST ceramics are 16 µC/cm2 and 62kV/cm, respectively. Furthermore, V5+ substitution improves the Pr value of the BST ceramics up to 25µC/cm2, which is larger than that of the BST ceramics. Therefore, the co-substitution of Sm3+ and V5+ in Bi4Ti3O12 (BIT) ceramics is effective for the improvement of its ferroelectricity.

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