High Current (>1000A), High Temperature (>200°C) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems

2012 ◽  
Vol 6 (1) ◽  
pp. 10-17 ◽  
Author(s):  
Brice R. McPherson ◽  
Robert Shaw ◽  
Jared Hornberger ◽  
Alex Lostetter ◽  
Roberto Schupbach ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Performance ◽  
High Current ◽  
Power Modules ◽  
High Performance Systems

High Temperature Silicon Carbide Power Modules for High Performance Systems

2012 ◽  
Vol 717-720 ◽  
pp. 1219-1224 ◽  
Author(s):  
Alexander B. Lostetter ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Speed ◽  
High Performance ◽  
Extreme Environment ◽  
High Energy ◽  
Power Modules ◽  
High Performance Systems ◽  
Silicon Based ◽  
High Speed Switching

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.

Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices

2013 ◽  
Vol 2013 (1) ◽  
pp. 000592-000597
Author(s):  
B. McPherson ◽  
B. Passmore ◽  
P. Killeen ◽  
D. Martin ◽  
A. Barkley ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
High Temperature ◽  
Power Density ◽  
High Performance ◽  
Elevated Temperatures ◽  
Power Converter ◽  
System Level ◽  
High Current ◽  
Package Design

The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and >100 kHz switching speeds. In this discussion, APEI, Inc. presents the design of a newly developed discrete package specifically intended for high performance, high current (>50A), rapid switching, and extended temperature (>250°C) wide band gap devices which are now readily available on the commercial market at voltages exceeding 1200V. Finite element analysis (FEA) results will be presented to illustrate the modeling process, design tradeoffs, and critical decisions fundamental to a high performance package design. A low profile design focuses on reducing parasitic impedances which hinder high speed switching. A notable increase in the switching speed and frequency reduces the size and volume of associated filtering components in a power converter. Operating at elevated temperatures reduces the requirements of the heat removal system, ultimately allowing for a substantial increase in the power density. Highlights of these packages include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN HEMT devices. Specific focus was placed on minimizing the cost of the materials and fabrication processes of the package components. The design of the package is discussed in detail. High temperature testing of a SiC assembly and electrical test results of a high frequency GaN based boost converter will be presented to demonstrate system level performance advantages.

High Temperature Silicon Carbide Power Modules for High Performance Systems

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000159-000166 ◽  
Author(s):  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
E. Cilio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Speed ◽  
High Performance ◽  
High Reliability ◽  
Extreme Environment ◽  
High Energy ◽  
Energy Applications ◽  
Power Modules ◽  
Reliability Systems

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs. One newly developed module is designed for high performance, ultra-high reliability systems such as aircraft and spacecraft, and features a hermetically sealed package with a ring seal technology capable of sustaining temperatures in excess of 400°C. The second module is designed for high performance commercial and industrial systems such as hybrid electric vehicles or renewable energy applications, implements a novel ultra-low parasitic packaging approach that enables high switching frequencies in excess of 100 kHz, and weighs in at just over 130 grams (offering ~5× mass reduction and ~3× size reduction in comparison with industry standard power brick packaging technology). It is configurable as either a half or full bridge converter. In this discussion, APEI, Inc. introduces these products and presents practical testing of each.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000297-000304 ◽  
Author(s):  
B. Reese ◽  
B. McPherson ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Performance ◽  
Single Phase ◽  
University Of Arkansas ◽  
Power Module ◽  
Power Modules ◽  
Gate Driver ◽  
Switch Position ◽  
The University

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.

Viewpoint on the manuscript by Zachary S. Hartwig et al “VIPER: An industrially scalable high current, high temperature superconductor cable” 2020 Supercond. Sci. Technol. 33

2021 ◽  
Author(s):  
Michael Parizh
Keyword(s):  
High Temperature ◽  
High Performance ◽  
High Temperature Superconductor ◽  
High Current ◽  
A Current

Abstract HTS tokamak SPARC is under development by the team lead by CFS, Cambridge, MA. The magnet will have toroidal coils operating at 20 T at a current in the 25 to 40 kA range. The ViewPoint describes VIPER, an advanced TSTC-based HTS cable that has a potential to meet all the criteria required for the HTS tokamak. If proven to be successful, the cable approach promises long lengths, hundreds of meters, of the high-performance cable with predictable and repeatable properties.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

2018 ◽  
Vol 924 ◽  
pp. 302-305
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Frequency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Wide Bandgap ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Current Voltage ◽  
Bandgap Semiconductors

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

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