Lifetime Modeling for Silicon Carbide Based Power Module

2021 ◽  
Author(s):  
Michele Calabretta PhD ◽  
Angelo Messina PhD ◽  
Alessandro Sitta
Keyword(s):  
2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.


2012 ◽  
Vol 2012 (1) ◽  
pp. 001105-001115 ◽  
Author(s):  
Z. Cole ◽  
B. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  

The packaging design and development of an on-board bi-directional charger for the battery system of the next generation Toyota Prius plug-in hybrid electric vehicle (PHEV) will be presented in this paper. The charger implements a multichip power module (MCPM) packaging strategy. The Silicon Carbide (SiC) MCPM charger is capable of operating to temperatures in excess of 200°C and at switching frequencies in excess of 500 kHz, significantly reducing the overall size and weight of the system in comparison with Toyota's present silicon-based Prius charger. The present actively cooled Si charger is capable of delivering a peak power of 1kW at less than 90 percent efficiency, is limited to less than 50 kHz switching, and measures greater than 6.3 liters with a mass of 6.6 kg, resulting in a power density of 150 W/kg. The passively cooled SiC MCPM charger presented herein was designed to deliver a peak power of 5 kW at greater than 96% efficiency, while measuring less than 0.9 liters with a mass of 1 kg, resulting in a power density greater than 5 kW/kg. Thus, the novel SiC MCPM charger represents an increase in power density of more than 30×, a very significant power density achievement in size and weight for sensitive mobile applications such as PHEVs. This paper will discuss the overall mechanical design of the SiC MCPM charger, the finite-element modeling and analysis of thermal and stress considerations, characterization and parasitic analysis of the MCPM, and the development of high temperature solutions for SiC devices.


1997 ◽  
Vol 483 ◽  
Author(s):  
C. E. Weitzel ◽  
K. E. Moore

AbstractImpressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.


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