An investigation of Near-field Radiated Emission for Silicon Carbide Power Module in Buck Converter

2020 ◽  
Author(s):  
Maosheng Zhang ◽  
Na Ren ◽  
Qing Guo ◽  
Wenxi Yao ◽  
Kuang Sheng
Keyword(s):  
Silicon Carbide ◽  
Near Field ◽  
Buck Converter ◽  
Power Module ◽  
Radiated Emission

Reconstruct the PWM Signal of Switching Power Supplies from the Near Field Radiation

2013 ◽  
Vol 718-720 ◽  
pp. 1792-1796
Author(s):  
Zhong Qun Li ◽  
Kai Xie ◽  
Ying Hao Ye ◽  
Rong Bin Guo ◽  
Xu Fei Wang
Keyword(s):  
Pulse Width Modulation ◽  
Signal Reconstruction ◽  
Near Field ◽  
Buck Converter ◽  
Power Supplies ◽  
Switching Converters ◽  
Switching Power ◽  
Magnetic Components ◽  
Field Radiation ◽  
Switching Power Supplies

A non-contact testing method is proposed for encapsulation treated or insulation coated switching power supplies, which is implemented by reconstructing the pulse width modulation (PWM) signal of switching converters from the near field radiation of magnetic components. The radiation pattern of a buck converter is investigated, and the magnetic field sensing probe and PWM signal reconstruction circuit are also illustrated. The reconstruction testing is carried out on a buck converter; the duty cycle error of the reconstructed PWM signal is less than 0.2%, which validates the proposed method.

Lifetime Modeling for Silicon Carbide Based Power Module

2021 ◽  
Author(s):  
Michele Calabretta PhD ◽  
Angelo Messina PhD ◽  
Alessandro Sitta
Keyword(s):  
Silicon Carbide ◽  
Power Module

scholarly journals Performance of Various SiC Devices and their Behavior in DC/DC Converter

2019 ◽  
Vol 9 (2S3) ◽  
pp. 62-67
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Voltage ◽  
Material Properties ◽  
High Frequency ◽  
Buck Converter ◽  
Nano Materials ◽  
Comparative Performance ◽  
Semiconducting Properties ◽  
Good Material

An extensive research on nano materials was carried out and the properties of Si were studied, Post study it was felt that there must be a material which exhibits semiconducting properties of Si with high breakdown voltage and work till high temperature range. Silicon Carbide (SiC) devices provided the answer for this. These devices are well known for high frequency, high voltage, high temperature and high power for their good material properties compared with silicon power MOSFET. In this paper, a study was conducted on various Silicon Carbide devices available in the market and the comparative performance of these devices were analysed. Furthermore there is a comparison of N channel silicon MOSFET device and silicon carbide device placed in bidirectional DC/DC buck converter in which Silicon Carbide device exhibit superior properties than Si device.

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

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