scholarly journals Parametric resonance of acoustic and optical phonons in GaAs/GaAsAl quantum well in the presence of laser field

2021 ◽  
Vol 13 (1) ◽  
pp. 7
Author(s):  
Dung Tien Nguyen ◽  
Le Canh Trung ◽  
Pham Thi Hoai Duong ◽  
Tran Cong Phong
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
San Francisco ◽  
Parametric Resonance ◽  
Acoustic Phonon ◽  
Parametric Amplification ◽  
Optical Phonons ◽  
Acoustic Phonons ◽  
Phonon Modes ◽  
Threshold Amplitude

In this paper, we analytically investigated the possibility of parametric resonance of acoustic and optical phonons. We obtained a general dispersion equation for parametric amplification and transformation of phonons. The dispersions of the resonant acoustic phonon modes and the threshold amplitude of the field for acoustic phonon parametric amplification are obtained. The parametric amplification for acoustic phonons in a GaAs/GaAsAl quantum well can occur under the condition that the amplitude of the external electromagnetic field is higher than the threshold amplitude. Full Text: PDF ReferencesB. A. Glavin, V. A. Kochelap, T. L. Linnik, P. Walker, A. J. Kent and M. Henini, "Monochromatic terahertz acoustic phonon emission from piezoelectric superlattices", Journal of Physics: Conference Series, Vol 92, (2007). CrossRef O. A. C. Nunes, "Piezoelectric surface acoustical phonon amplification in graphene on a GaAs substrate", Journal of Applied Physics 115, 233715 (2014). CrossRef Yu. E. Lozovik, S. P. Merkulova, I. V. Ovchinnikov, "Sasers: resonant transitions in narrow-gap semiconductors and in exciton system in coupled quantum wells", Phys. Lett. A 282, 407-414, (2001). CrossRef R.P. Beardsley, A.V. Akimov, M. Henini and A.J. Kent, "Coherent Terahertz Sound Amplification and Spectral Line Narrowing in a Stark Ladder Superlattice", PRL 104, 085501, (2010). CrossRef Pascal Ruello, Vitalyi E. Gusev, "Physical mechanisms of coherent acoustic phonons generation by ultrafast laser action", Ultrasonics 56, 21-35, (2015). CrossRef L. Esaki, in Proc. 17th Int. Conf. Phys. Semiconductors, San Francisco, CA, Aug, J.D. Chadi and W.A. Harrison, Eds, Berlin: Springer- Verlag, 473, (1984). DirectLink W. Xu, F. M. Peeters and J. T. Devreese, "Electrophonon resonances in a quasi-two-dimensional electron system", Phys. Rev. B 48, 1562 (1993). CrossRef Tran Cong Phong, Nguyen Quang Bau, "Parametric resonance of acoustic and optical phonons in a quantum well", Journal of the Korean Physical Society, Vol. 42, No. 5, 647-651, (2003). DirectLink

Guided Acoustic Phonon Modes in Layered Anisotropic Nanowires

2003 ◽  
Author(s):  
Osama M. Mukdadi ◽  
Subhendu K. Datta ◽  
Martin L. Dunn
Keyword(s):  
Thermal Conductivity ◽  
Acoustic Phonon ◽  
Energy Transport ◽  
Bulk Material ◽  
Rectangular Cross Section ◽  
Critical Role ◽  
Acoustic Phonons ◽  
Phonon Modes ◽  
Low Velocity ◽  
Analysis Technique

Acoustic phonons play a critical role in energy transport in nanostructures. The dispersion of acoustic phonons strongly influences thermal conductivity. Recent observations show lower values of thermal conductivity in finite dimensional nanostructures than in the bulk material. In this work, we will present results for guided acoustic phonon modes in (a) a bilayered GaAs-Nb nanowire of rectangular cross section and (b) a trapezoidal Si nanowire. The former has been used for phonon counting in a nanocalorimeter for measuring thermal conductivity and the latter is commonly used in MEMS applications. A semi-analytical finite element (SAFE) analysis technique has been used to investigate the effects of layering, anisotropy, and boundaries on the dispersion of modes of propagation. Many interesting features of group velocities are found that show confinements around the corners, in the low velocity layer, and coupling of the longitudinal and flexural modes. These would strongly influence thermal conductivity and might provide means of nondestrutive evaluation of mechanical properties.

scholarly journals Многократное изменение электрон-фононного взаимодействия в квантовых ямах с диэлектрически различными барьерами

2022 ◽  
Vol 56 (1) ◽  
pp. 101
Author(s):  
А.Ю. Маслов ◽  
О.В. Прошина
Keyword(s):  
Quantum Wells ◽  
Charged Particles ◽  
Strong Interactions ◽  
Asymmetric Structure ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Barrier Materials ◽  
Electron Phonon Interaction ◽  
Order Of Magnitude

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

Scattering Processes with the Emission of Longitudinal Optical Phonons in the Landau Level System In GaAs/AlGaAs Quantum Well

2021 ◽  
Author(s):  
Ngo Vinh Doan The ◽  
Trung Le Canh
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Golden Rule ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Scattering Rate ◽  
Quantizing Magnetic Field ◽  
Scattering Time ◽  
The Magnetic Field

Abstract The scattering processes of longitudinal optical phonons in GaAs/AlGaAs quantum wells in a quantizing magnetic field are considered. The time of intrasubband scattering between Landau levels is calculated by using Fermi's golden rule. The dependence of the scattering rate on the magnitude of the magnetic field has been shown and the magnetic field can suppress scattering processes on longitudinal optical phonons. It is found that the scattering time depends linearly on the width of the quantum well.

Acoustic phonon modes in asymmetric AlxGa1−xN/GaN/AlyGa1−yN quantum wells

2017 ◽  
Vol 102 ◽  
pp. 64-73 ◽  
Author(s):  
Y.H. Zan ◽  
S.L. Ban ◽  
Y.J. Chai ◽  
Y. Qu
Keyword(s):  
Quantum Wells ◽  
Acoustic Phonon ◽  
Phonon Modes

Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers

1999 ◽  
Vol 263-264 ◽  
pp. 462-465 ◽  
Author(s):  
Gregory Belenky ◽  
Mitra Dutta ◽  
Vera B. Gorfinkel ◽  
George I. Haddad ◽  
G.J. Iafrate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Phonon ◽  
Quantum Well Lasers ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Semiconductor Structures

DISPERSIONS AND FRÖHLICH ELECTRON–PHONON INTERACTION HAMILTONIAN OF PROPAGATING OPTICAL PHONON MODES IN QUASI-ONE-DIMENSIONAL WURTZITEGaN-BASED QUANTUM WELL WIRES

2007 ◽  
Vol 14 (05) ◽  
pp. 903-910 ◽  
Author(s):  
L. ZHANG ◽  
HONG-JING XIE
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Phonon ◽  
Detailed Comparison ◽  
Continuous Functions ◽  
Uniaxial Crystal ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
One Dimensional ◽  
Quantum Well Wire

Based on the dielectric continuum model and Loudon's uniaxial crystal model, the propagating (PR) optical phonon modes and the Fröhlich-like electron–PR phonon interaction Hamiltonian in a quasi-one-dimensional (Q1D) wurtzite quantum well wire (QWW) structure are deduced and analyzed. Numerical calculations on AlGaN / GaN / AlGaN wurtzite QWW are performed. Results reveal that the dispersive frequencies of PR modes are the continuous functions of free wavenumber kzin z-direction and discrete functions of azimuthal quantum number m. The reduced behavior of the PR modes in wurtzite quantum systems is obviously observed. From the discussion of the electron–PR phonon coupling functions, it is found that the low-order PR modes in the case of small kzand m play a more important role in the electron–PR phonon interactions. Moreover, a detailed comparison of the PR modes in Q1D QWW structures with those in quasi-two-dimensional quantum wells are also carried out. The physical reasons resulting in the relationship and distinction in the two types of systems are also analyzed deeply.

RECENT DEVELOPMENTS ON ELECTRON-PHONON INTERACTIONS IN STRUCTURES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 281-312 ◽  
Author(s):  
M. DUTTA ◽  
M. A. STROSCIO ◽  
K. W. KIM
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Quantum Cascade Lasers ◽  
Optoelectronic Devices ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Cross Sectional ◽  
Device Applications ◽  
Dielectric Continuum

As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and acoustic phonons deviate substantially from those of bulk semiconductors. Furthermore, as würtzite materials are applied increasingly in electronic and optoelectronic devices it becomes more important to understand the phonon modes in such systems. This account emphasizes the properties of bulk optical phonons in würtzite structures, the properties of LO-phonon modes and acoustic-phonon modes arising in polar-semiconductor quantum wells, superlattices, quantum wires and quantum dots, with a variety of cross sectional geometries and, lastly, the properties of optical phonons in würtzite materials as predicted by the dielectric continuum model. Emphasis is placed on the dielectric continuum and elastic continuum models of bulk, confined and interface phonons. This article emphasizes device applications of confined phonons in GaAs-based systems and provides a brief discussion of carrier-LO-phonon interactions in bulk würtzite structures. This account also includes discussions on the use of metal-semiconductor heterointerfaces to reduce scattering and on the role of phonons in Fröhlich, deformation and piezoelectric interactions in electronic and optoelectronic structures; specific device applications high-lighted here include quantum cascade lasers, mesoscopic devices, thermoelectric devices and optically-pumped resonant intersubband lasers.

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

scholarly journals Modelling of Hot Acoustic Phonon Propagation in Two Dimensional Layers

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 197-200
Author(s):  
N. A. Bannov ◽  
V. V. Mitin ◽  
F. T. Vasko
Keyword(s):  
Kinetic Equation ◽  
Quantum Well ◽  
Decay Rate ◽  
Acoustic Phonon ◽  
Deformation Potential ◽  
Two Dimensional ◽  
Quantum Kinetic Equation ◽  
Acoustic Phonons ◽  
Phonon Interaction

The transport of confined acoustic phonons in a flee-standing quantum well has been studied by solving the quantum kinetic equation for phonons. The phonon decay rate has been numerically calculated for GaAs flee-standing quantum well. Phonon interaction with electrons through the deformation potential makes the major contribution to the acoustic phonon decay.

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