scholarly journals Design of On chip Spiral Inductors for Millimeter Wave Frequency Synthesizers

2020 ◽  
Vol 14 ◽  
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
High Frequency ◽  
Impedance Matching ◽  
Vital Role ◽  
Wave Band ◽  
Lumped Model ◽  
Lc Oscillator ◽  
On Chip ◽  
Millimeter Wave Oscillators

The energy storing element, inductor plays a vital role in CMOS based high frequency integrated circuits, especially in signal generation and impedance matching blocks.An on chip inductor is considered as a critical component because its performance directly impacts the associated circuitry when it is used as a load device or as a matching element. Out of the various requirements of an inductor which resides inside a chip, the inductance value,quality factor and self resonance frequency with smaller area is often preferred. This paper focuses on the lumped model of inductors for high frequency circuits working in the Millimeter wave region from 30 GHz to 300 GHz. For millimeter wave oscillators,inductance value in the range of pico Henry are essential and hence a complete model of an inductor is presented. Using electromagnetic simulator SONNET, all the parameters are extracted. The extracted model is used in the design of an LC Oscillator for millimeter wave band. A Q factor of 26 is achieved for an inductor value close to 153 pH at 60 GHz.The circuits employing this inductor shows promising results when simulated using 45 nm CMOS pdks

scholarly journals Optimization of spaceflight millimeter-wave impedance matching networks using laser trimming

2021 ◽  
pp. 1-7
Author(s):  
K. Parow-Souchon ◽  
D. Cuadrado-Calle ◽  
S. Rea ◽  
M. Henry ◽  
M. Merritt ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
Impedance Matching ◽  
Wave Impedance ◽  
Low Noise ◽  
Device Performance ◽  
Interface Circuits ◽  
Interface Circuit ◽  
Noise Amplifier

Abstract Realizing packaged state-of-the-art performance of monolithic microwave integrated circuits (MMICs) operating at millimeter wavelengths presents significant challenges in terms of electrical interface circuitry and physical construction. For instance, even with the aid of modern electromagnetic simulation tools, modeling the interaction between the MMIC and its package embedding circuit can lack the necessary precision to achieve optimum device performance. Physical implementation also introduces inaccuracies and requires iterative interface component substitution that can produce variable results, is invasive and risks damaging the MMIC. This paper describes a novel method for in situ optimization of packaged millimeter-wave devices using a pulsed ultraviolet laser to remove pre-selected areas of interface circuit metallization. The method was successfully demonstrated through the optimization of a 183 GHz low noise amplifier destined for use on the MetOp-SG meteorological satellite series. An improvement in amplifier output return loss from an average of 12.9 dB to 22.7 dB was achieved across an operational frequency range of 175–191 GHz and the improved circuit reproduced. We believe that our in situ tuning technique can be applied more widely to planar millimeter-wave interface circuits that are critical in achieving optimum device performance.

A Novel Compact On-Chip Millimeter-Wave Band-Pass Filter with GaAs pHEMT Technology

2021 ◽  
Author(s):  
Wen-Tao Wang ◽  
Hao-Ran Zhu ◽  
Yu-Fa Sun ◽  
Zhi-Xiang Huang ◽  
Xian-Liang Wu
Keyword(s):  
Millimeter Wave ◽  
Band Pass Filter ◽  
Wave Band ◽  
Pass Filter ◽  
Millimeter Wave Band ◽  
Band Pass ◽  
On Chip

A Novel Scheme for Wide Bandwidth Chip-to-Chip Communications

2007 ◽  
Vol 4 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Qing Liu ◽  
Patrick Fay ◽  
Gary H. Bernstein
Keyword(s):  
Integrated Circuits ◽  
Coplanar Waveguide ◽  
Impedance Matching ◽  
Three Dimensional ◽  
Fabrication Process ◽  
Silicon Substrates ◽  
Electromagnetic Simulations ◽  
Communication Paradigm ◽  
On Chip ◽  
Test Chips

Quilt Packaging (QP), a novel chip-to-chip communication paradigm for system-in-package integration, is presented. By forming protruding metal nodules along the edges of the chips and interconnecting integrated circuits (ICs) through them, QP offers an approach to ameliorate the I/O speed bottleneck. A fabrication process that includes deep reactive ion etching, electroplating, and chemical-mechanical polishing is demonstrated. As a low-temperature process, it can be easily integrated into a standard IC fabrication process. Three-dimensional electromagnetic simulations of coplanar waveguide QP structures have been performed, and geometries intended to improve impedance matching at the interface between the on-chip interconnects and the chip-to-chip nodule structures were evaluated. Test chips with 100 μm wide nodules were fabricated on silicon substrates, and s-parameters of chip-to-chip interconnects were measured. The insertion loss of the chip-to-chip interconnects was as low as 0.2 dB at 40 GHz. Simulations of 20 μm wide QP structures suggest that the bandwidth of the inter-chip nodules is expected to be above 200 GHz.

scholarly journals Substrate integrated circuits for high frequency of opto electronics

2020 ◽  
Vol 9 (3) ◽  
pp. 224
Author(s):  
Mounika Punati ◽  
R. Yuvaraj
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
High Frequency ◽  
Cutting Edge ◽  
Potential Outcomes ◽  
Work Patterns ◽  
Earth Models ◽  
Implementation Stages ◽  
Innovative Work

Another age of high-recurrence coordinated circuits is displayed, which is called substrate incorporated circuits (SICS). Current cutting edge of circuit plan and implementation stages dependent on this new idea are assessed and dis-cussed in delail. Various potential outcomes and various favorable circumstances of the SICS are appeared for microwave, millimeter-wave and opto hardware applications. Down to earth models are delineated with hypothetical and trial results for substrate coordinated waveguide (SIW), substrate incorporated chunk waveguide (SISW) and substrate incorporated non-transmitting dielectric (SI") direct circuits. Future innovative work patterns are likewise dis-cussed regarding ease imaginative plan of millimeter-wave and optoelectronic coordinated circuits.

Modeling and Simulation of Carbon Nanotube Interconnect Network

2007 ◽  
Vol 121-123 ◽  
pp. 1057-1060
Author(s):  
Chen Dong ◽  
Wei Wang ◽  
Maher Rizkalla
Keyword(s):  
Integrated Circuits ◽  
Modeling And Simulation ◽  
High Frequency ◽  
Preliminary Analysis ◽  
Potential Candidate ◽  
Good Match ◽  
Simulation Techniques ◽  
Frequency Independent ◽  
On Chip ◽  
Interconnect Network

The electrical properties of metallic carbon nanotubes (CNT) can rival, or even exceed, the best metals known. It is a potential candidate for future on-chip interconnect, whose performance will be dominant in the next generation integrated circuits. In this paper, a study on the modeling and simulation techniques for the CNT interconnect network is carried out. The frequency-independent models of CNT interconnects in terms of resistance, inductance and capacitance are summarized. A novel frequencydependent circuit model is proposed for CNT for various high-frequency applications. Preliminary analysis shows a good match between numerical simulations and the compact model. The proposed modeling and simulation techniques for CNT interconnect network are expected to play an important role in the future CNT nanotechnology applications.

High-Frequency Modeling of On-Chip Coupled Carbon Nanotube Interconnects for Millimeter-Wave Applications

2016 ◽  
Vol 6 (8) ◽  
pp. 1226-1232 ◽  
Author(s):  
Wen-Sheng Zhao ◽  
Jie Zheng ◽  
Linxi Dong ◽  
Feng Liang ◽  
Yue Hu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Millimeter Wave ◽  
High Frequency ◽  
On Chip
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