scholarly journals Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

2021 ◽  
Vol 7 (1) ◽  
pp. 18-29
Author(s):  
Vinod Pralhad Tayade ◽  
Swapnil Laxman Lahudkar
Keyword(s):  
Low Power ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
20 Nm ◽  
Graphene Material

In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to design an alternative of MOSFETs. Graphene FETs are one of the alternatives of MOSFETs due to the excellent properties of graphene material. In this work, a user-defined graphene material is defined, and a graphene channel FET is implemented using the Silvaco technology computer-aided design (TCAD) tool at 100 nm and scaled to 20 nm channel length. A silicon channel MOSFET is also implemented to compare the performance. The results show the improvement in subthreshold slope (SS) = 114 mV/dec, ION/IOFF ratio = 14379, and drain induced barrier lowering (DIBL) = 123 mV/V. It is concluded that graphene FETs are suitable candidates for low power applications.

Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

2004 ◽  
Vol 43 (4B) ◽  
pp. 2151-2155 ◽  
Author(s):  
Yongxun Liu ◽  
Kenichi Ishii ◽  
Meishoku Masahara ◽  
Toshiyuki Tsutsumi ◽  
Hidenori Takashima ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Cross Sectional ◽  
Shape Dependence ◽  
Channel Effects

Boron redistribution in arsenic‐implanted silicon and short‐channel effects in metal–oxide–semiconductor field effect transistors

1992 ◽  
Vol 61 (25) ◽  
pp. 3038-3040 ◽  
Author(s):  
D. K. Sadana ◽  
A. Acovic ◽  
B. Davari ◽  
D. Grutzmacher ◽  
H. Hanafi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Projected Performance of Sub-10 nm GaN-based Double Gate MOSFETs

2017 ◽  
Vol 2 (2) ◽  
pp. 15-19 ◽  
Author(s):  
Md. Saud Al Faisal ◽  
Md. Rokib Hasan ◽  
Marwan Hossain ◽  
Mohammad Saiful Islam
Keyword(s):  
High Speed ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Channel Length ◽  
Capacitive Coupling ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel ◽  
Channel Effects ◽  
Silvaco Atlas

GaN-based double gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs) in sub-10 nm regime have been designed for the next generation logic applications. To rigorously evaluate the device performance, non-equilibrium Green’s function formalism are performed using SILVACO ATLAS. The device is turn on at gate voltage, VGS =1 V while it is going to off at VGS = 0 V. The ON-state and OFF-state drain currents are found as 12 mA/μm and ~10-8 A/μm, respectively at the drain voltage, VDS = 0.75 V. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are ~69 mV/decade and ~43 mV/V, which are very compatible with the CMOS technology. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate. The SS and DIBL are decreased with increasing the underlap length (LUN). Though the source to drain resistance is increased for enhancing the channel length, the underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN-based DG-MOSFETs as one of the excellent promising candidates to substitute currently used MOSFETs for future high speed applications.

scholarly journals Dependence of Short-Channel Effects on Semiconductor Bandgap in Tunnel Field-Effect Transistors

2018 ◽  
Vol 1034 ◽  
pp. 012003
Author(s):  
Nguyen Dang Chien ◽  
Chun-Hsing Shih ◽  
Hung-Jin Teng ◽  
Cong-Kha Pham
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects
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