scholarly journals Influence of γ-Irradiation on the Structural Properties of Indium Monoselenide Crystals

2016 ◽  
Vol 6 (6) ◽  
pp. 1264-1268
Author(s):  
F. A. Al-Mufadi ◽  
A. El-Taher ◽  
G. A. Gamal
Keyword(s):  
Structural Properties ◽  
Energy Gap ◽  
Γ Irradiation ◽  
Layered Semiconductor ◽  
X Ray ◽  
Detailed Structural Analysis ◽  
Peak Broadening ◽  
Potential Applications ◽  
Vertical Bridgman ◽  
Special Modification

Indium monoselenide (InSe) which is a layered semiconductor whose energy gap is 1.24 eV has received attention because of its potential applications in optoelectronic devices. In the present work n-type InSe crystals were grown by a special modification of the vertical Bridgman technique. X-ray Diffraction (XRD) patterns showed that all samples were single phased InSe. The crystals were irradiated with 100 - 500 KGy to reveal the influence of irradiation on the structural properties of the samples. Detailed structural analysis was done by Scherrerr’s procedures, x-ray peak broadening and Williamson–Hall plot methods to evaluate the crystalline sizes and lattice strain. Also from the relations between the irradiation dose and the deformation of the lattice parameters we could investigate and discuss the mutation of the dislocation density, grain size, microstrain and crystallinity of the grown crystals. Striking results are found due to irradiation in the present study for the first time.

X-ray peak broadening on microstructure, and structural properties of titanium and Ti-6Al-4V alloys

2020 ◽  
Vol 27 ◽  
pp. 2390-2393 ◽  
Author(s):  
Showkat Ali ◽  
R. Karunanithi ◽  
M. Prashanth ◽  
M. Abdur Rahman
Keyword(s):  
Structural Properties ◽  
X Ray ◽  
Peak Broadening

scholarly journals Pb1-xMnxTe single crystals and their structural properties

2004 ◽  
Vol 69 (12) ◽  
pp. 1121-1128 ◽  
Author(s):  
Aleksandar Golubovic ◽  
Slobodanka Nikolic ◽  
Stevan Djuric ◽  
Nebojsa Romcevic
Keyword(s):  
Diffraction Analysis ◽  
Single Crystals ◽  
Structural Properties ◽  
Powder Diffraction ◽  
Room Temperature ◽  
Chemical Polishing ◽  
Published Data ◽  
Etching Solution ◽  
X Ray ◽  
Vertical Bridgman

Pb1-xMnxTe crystals were grown by the vertical Bridgman method. Their structural properties were observed both by optical microscopy after chemical polishing and ething, and by X-ray powder diffraction analysis. A solution of 5 vol. % Br2 in HBr at room temperatur, for an exposure of 2 min was determined for chemical polishing. Asolution of 20 g KOH in 1 ml H2O2, 2 ml glycerol (C3H8O3), and 20 ml H2O at room temperature for an exposure for 6 min was found to be a suitable etching solution. The obtained results are discussed and compared with published data.

Selective oxidation of cyclopentene to glutaraldehyde by H2O2 over Nb-SBA-15

2021 ◽  
Author(s):  
yingmeng qi ◽  
Qi Han ◽  
li wu ◽  
Jun Li
Keyword(s):  
Structural Properties ◽  
Selective Oxidation ◽  
Mesoporous Materials ◽  
Hydrothermal Process ◽  
X Ray Diffraction ◽  
X Ray

A series of niobium-containing mesoporous materials Nb-SBA-15 have been prepared by sonication–impregnation and hydrothermal process. The dispersion and structural properties of niobium-containing species were systematically characterized by X-ray diffraction, scanning...

scholarly journals A pH-Responsive Foam Formulated with PAA/Gemini 12-2-12 Complexes

2021 ◽  
Vol 5 (3) ◽  
pp. 37
Author(s):  
Hernán Martinelli ◽  
Claudia Domínguez ◽  
Marcos Fernández Leyes ◽  
Sergio Moya ◽  
Hernán Ritacco
Keyword(s):  
Surface Tension ◽  
Dynamic Surface Tension ◽  
Foam Formation ◽  
Ph Responsive ◽  
Dynamic Surface ◽  
X Ray ◽  
Equilibrium Surface Tension ◽  
Potential Applications ◽  
The Stability ◽  
Air Interfaces

In the search for responsive complexes with potential applications in the formulation of smart dispersed systems such as foams, we hypothesized that a pH-responsive system could be formulated with polyacrylic acid (PAA) mixed with a cationic surfactant, Gemini 12-2-12 (G12). We studied PAA-G12 complexes at liquid–air interfaces by equilibrium and dynamic surface tension, surface rheology, and X-ray reflectometry (XRR). We found that complexes adsorb at the interfaces synergistically, lowering the equilibrium surface tension at surfactant concentrations well below the critical micelle concentration (cmc) of the surfactant. We studied the stability of foams formulated with the complexes as a function of pH. The foams respond reversibly to pH changes: at pH 3.5, they are very stable; at pH > 6, the complexes do not form foams at all. The data presented here demonstrate that foam formation and its pH responsiveness are due to interfacial dynamics.

scholarly journals Photoconductivity of the Single Crystals Pb4Ga4GeS12 and Pb4Ga4GeSe12

Proceedings ◽  
2020 ◽  
Vol 62 (1) ◽  
pp. 4
Author(s):  
Hadj Bellagra ◽  
Oksana Nyhmatullina ◽  
Yuri Kogut ◽  
Halyna Myronchuk ◽  
Lyudmyla Piskach
Keyword(s):  
Ternary Systems ◽  
Semiconductor Materials ◽  
Tetragonal Symmetry ◽  
Bandgap Energy ◽  
Experimental Measurements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Symmetry Space ◽  
Symmetry Space Group

Quaternary semiconductor materials of the Pb4Ga4GeS(Se)12 composition have attracted the attention of researchers due to their possible use as active elements of optoelectronics and nonlinear optics. The Pb4Ga4GeS(Se)12 phases belong to the solid solution ranges of the Pb3Ga2GeS(Se)8 compounds which form in the quasi-ternary systems PbS(Se)−Ga2S(Se)3−GeS(Se)2 at the cross of the PbGa2S(Se)4−Pb2GeS(Se)4 and PbS(Se)−PbGa2GeS(Se)6 sections. The quaternary sulfide melts congruently at 943 K. The crystallization of the Pb4Ga4GeSe12 phase is associated with the ternary peritectic process Lp + PbSe ↔ PbGa2S4 + Pb3Ga2GeSe8 at 868 K. For the single crystal studies, Pb4Ga4GeS(Se)12 were pre-synthesized by co-melting high-purity elements. The X-ray diffraction results confirm that these compounds possess non-centrosymmetric crystal structure (tetragonal symmetry, space group P–421c). The crystals were grown by the vertical Bridgman method in a two-zone furnace. The starting composition was stoichiometric for Pb4Ga4GeS12, and the solution-melt method was used for the selenide Pb4Ga4GeSe12. The obtained value of the bandgap energy for the Pb4Ga4GeS12 and Pb4Ga4GeSe12 crystals is 1.86 and 2.28 eV, respectively. Experimental measurements of the spectral distribution of photoconductivity for the Pb4Ga4GeS12 and Pb4Ga4GeSe12 crystals exhibit the presence of two spectral maxima. The first lies in the region of 570 (2.17 eV) and 680 nm (1.82 eV), respectively, and matches the optical bandgap estimates well. The locations of the admixture maxima at about 1030 (1.20 eV) and 1340 nm (0.92 eV), respectively, agree satisfactorily with the calculated energy positions of the defects vs. and VSe.

scholarly journals Heterogeneity of the Dendrite Array Created in the Root of Cored SX Turbine Blades during Initial Stage of Crystallization

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 80
Author(s):  
Robert Paszkowski ◽  
Jacek Krawczyk ◽  
Włodzimierz Bogdanowicz ◽  
Dariusz Szeliga ◽  
Jan Sieniawski
Keyword(s):  
Transverse Section ◽  
Turbine Blades ◽  
Lateral Growth ◽  
X Ray Diffraction ◽  
Dendrite Branching ◽  
X Ray ◽  
Initial Stage ◽  
Vertical Bridgman ◽  
Lateral Dendrite ◽  
Root Connection

The roots of cored single-crystalline turbine blades made of a nickel-based CMSX-4 superalloy were studied. The casts were solidified by the vertical Bridgman method in an industrial ALD furnace using the spiral selector and selector continuer situated asymmetrically in the blade root transverse section. Scanning electron microscopy, the Laue diffraction and X-ray diffraction topography were used to visualize the dendrite array and the local crystal misorientation of the roots. It has been stated that heterogeneity of the dendrite array and creation of low-angle boundaries (LABs) are mostly related to the lateral dendrite branching and rapid growth of the secondary and tertiary dendrites near the surface of the continuer–root connection. These processes have an unsteady character. Additionally, the influence of the mould walls on the dendrite array heterogeneity was studied. The processes of the lateral growth of the secondary dendrites and competitive longitudinal growth of the tertiary dendrites are discussed and a method of reducing the heterogeneity of the root dendrite array is proposed.

scholarly journals Laser-Induced Deposition of Plasmonic Ag and Pt Nanoparticles, and Periodic Arrays

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 10
Author(s):  
Daria V. Mamonova ◽  
Anna A. Vasileva ◽  
Yuri V. Petrov ◽  
Denis V. Danilov ◽  
Ilya E. Kolesnikov ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Pt Nanoparticles ◽  
Single Step ◽  
X Ray Diffraction ◽  
Ag Nps ◽  
X Ray ◽  
Periodic Arrays ◽  
Potential Applications ◽  
Surface Decoration ◽  
Wide Potential

Surfaces functionalized with metal nanoparticles (NPs) are of great interest due to their wide potential applications in sensing, biomedicine, nanophotonics, etc. However, the precisely controllable decoration with plasmonic nanoparticles requires sophisticated techniques that are often multistep and complex. Here, we present a laser-induced deposition (LID) approach allowing for single-step surface decoration with NPs of controllable composition, morphology, and spatial distribution. The formation of Ag, Pt, and mixed Ag-Pt nanoparticles on a substrate surface was successfully demonstrated as a result of the LID process from commercially available precursors. The deposited nanoparticles were characterized with SEM, TEM, EDX, X-ray diffraction, and UV-VIS absorption spectroscopy, which confirmed the formation of crystalline nanoparticles of Pt (3–5 nm) and Ag (ca. 100 nm) with plasmonic properties. The advantageous features of the LID process allow us to demonstrate the spatially selective deposition of plasmonic NPs in a laser interference pattern, and thereby, the formation of periodic arrays of Ag NPs forming diffraction grating

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