scholarly journals Multithreshold MOS Current Mode Logic Based Asynchronous Pipeline Circuits

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Kirti Gupta ◽  
Neeta Pandey ◽  
Maneesha Gupta
Keyword(s):  
Power Consumption ◽  
Reducing Power ◽  
Current Mode ◽  
Cmos Technology ◽  
Mos Transistors ◽  
Flip Flop ◽  
Current Mode Logic ◽  
Double Edge ◽  
Multiple Threshold ◽  
Asynchronous Pipeline

Multithreshold MOS Current Mode Logic (MCML) implementation of asynchronous pipeline circuits, namely, a C-element and a double-edge triggered flip-flop is proposed. These circuits use multiple-threshold MOS transistors for reducing power consumption. The proposed circuits are implemented and simulated in PSPICE using TSMC 0.18 μm CMOS technology parameters. The performance of the proposed circuits is compared with the conventional MCML circuits. The results indicate that the proposed circuits reduce the power consumption by 21 percent in comparison to the conventional ones. To demonstrate the functionality of the proposed circuits, an asynchronous FIFO has also been implemented.

scholarly journals A HIGH-PERFORMANCE AND LOW-POWER DELAY BUFFER

2013 ◽  
pp. 78-82
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Vlsi Design ◽  
Flip Flop ◽  
Ring Counter ◽  
Double Edge ◽  
Low Power Cmos ◽  
Cmos Vlsi

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.

Design and Analysis of Power Efficient TG Based Dual Edge Triggered Flip-Flops with Stacking Technique

2019 ◽  
Vol 29 (08) ◽  
pp. 2050123 ◽  
Author(s):  
Neethu Anna Sabu ◽  
K. Batri
Keyword(s):  
Vlsi Design ◽  
Cmos Technology ◽  
Flip Flop ◽  
Circuit Performance ◽  
Power Efficient ◽  
Transmission Gate ◽  
Double Edge ◽  
Speed Performance ◽  
Layout Area ◽  
Power Delay Product

One of the paramount issues in the field of VLSI design is the rapid increase in power consumption. Therefore, it is necessary to develop power-efficient circuits. Here, three new simple architectures are presented for a Dynamic Double Edge Triggered Flip-flop named as Transistor Count Reduction Flip-flop, S-TCRFF (Series Stacking in TCRFF) and FST in TCRFF (Forced Stacking of Transistor in TCRFF). The first one features a dynamic design comprising of transmission gate in which total transistor count has greatly reduced without affecting the logic, thereby attaining better power and speed performance. For the reduction of static power, two types of stacking called series and forced transistor stacking are applied. The circuits are simulated using Cadence Virtuoso in 45[Formula: see text]nm CMOS technology with a power supply of 1[Formula: see text]V at 500[Formula: see text]MHz when input switching activity is 25%. The simulated results indicated that the new designs (TCRFF, S-TCRFF and FST in TCRFF) excelled in different circuit performance indices like Power-Delay-Product (PDP), Energy-Delay-Product (EDP), average and leakage power with less layout area compared with the performance of nine recently proposed FF designs. The improvement in PDPdq value was up to 89.2% (TCRFF), 89.9% (S-TCRFF) and 90.3% (FST in TCRFF) with conventional transmission gate FF (TGFF).

High Speed Min/Max Architecture Based on a Novel Comparator in 0.18-μm CMOS Process

2015 ◽  
Vol 24 (04) ◽  
pp. 1550048 ◽  
Author(s):  
Amir Fathi ◽  
Abdollah Khoei ◽  
Khayrollah Hadidi
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Current Mode ◽  
Cmos Technology ◽  
Operating Frequency ◽  
Cmos Process ◽  
Fuzzy Logic Controllers ◽  
Speed Performance ◽  
External Clock ◽  
Frequency Feature

This paper describes the design of a high speed min/max architecture based on a new current comparator. The main advantage of the proposed circuit which employs a novel preamplifier-latch comparator is the higher operating frequency feature in comparison with previous works. Because the comparator can work in voltage mode, the min/max structure can be redesigned either in voltage or current mode. The designed comparator is refreshed without any external clock. Therefore, it does not degrade the speed performance of proposed min/max structure. These features along with low power consumption qualify the proposed architecture to be widely used in high speed fuzzy logic controllers (FLCs). Post-layout simulation results confirm 3.4 GS/s comparison rate with 9-bit resolution for a 0.9 V peak-to-peak input signal range for the comparator and 800 MHz operating frequency for min/max circuit. The power consumption of whole structure is 912 μW from a 1.8 V power supply using TSMC 0.18-μm CMOS technology.

High-Performance Current-Mode Logic Ternary D Flip-Flop Based on Bipolar Complementary Metal Oxide Semiconductor

2021 ◽  
Vol 16 (4) ◽  
pp. 528-533
Author(s):  
Xianghong Zhao ◽  
Longhua Ma ◽  
Hongye Su ◽  
Jieyu Zhao ◽  
Weiming Cai
Keyword(s):  
High Frequency ◽  
High Speed ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Oxide Semiconductor ◽  
Logic Function ◽  
Flip Flop ◽  
Current Mode Logic ◽  
Transmission Speed

In this paper, a simple-structured and high-performance current-mode logic (CML) ternary D flip-flop based on BiCMOS is proposed. It combines both advantages of BiCMOS and CML circuits, which is with much more high-speed, strong-drive and anti-interference abilities. Utilizing TSMC 180 nm process, results of simulations carried out by HSPICE illustrate the proposed circuit not only has correct logic function, but also gains improvements of 95.6~98.4% in average D-Q delay and 16.2%~70.4 in PDP compared with advanced ternary D flip-flop. When compared at the same information transmission speed, proposed circuit is more competitive. Furthermore, it can perform up to high frequency of 15 GHz and drive heavier load. All the results prove that proposed circuit is high-performance and very suitable for high-speed and high-frequency applications.

Statistical Simulations on Perceptron-Based Adders

2011 ◽  
pp. 1474-1481
Author(s):  
Snorre Aunet ◽  
Hans Kristian Otnes Berge
Keyword(s):  
Power Consumption ◽  
Supply Voltage ◽  
Reducing Power ◽  
Process Variations ◽  
Full Adder ◽  
Cmos Technology ◽  
Subthreshold Cmos ◽  
Order Of Magnitude ◽  
Supply Voltages ◽  
Circuit Technique

In this article we compare a number of full-adder (1- bit addition) cells regarding minimum supply voltage and yield, when taking statistical simulations into account. According to the ITRS Roadmap two of the most important challenges for future nanoelectronics design are reducing power consumption and increasing manufacturability (ITRS, 2005). We use subthreshold CMOS, which is regarded by many as the most promising ultra low power circuit technique. It is also shown that a minimum redundancyfactor as low as 2 is sufficient to make circuits maintain full functionality under the presence of defects. This is, to our knowledge, the lowest redundancy reported for comparable circuits, and builds on a method suggested a few years ago (Aunet & Hartmann, 2003). A standard Full-Adder (FA) and an FA based on perceptrons exploiting the “mirrored gate”, implemented in a standard 90 nm CMOS technology, are shown not to withstand statistical mismatch and process variations for supply voltages below 150 mV. Exploiting a redundancy scheme tolerating “open” faults, with gate-level redundancy and shorted outputs, shows that the same two FAs might produce adequate Sum and Carry outputs at the presence of a defect PMOS for supply voltages above 150 mV, for a redundancy factor of 2 (Aunet & Otnes Berge, 2007). Two additional perceptrons do not tolerate the process variations, according to simulations. Simulations suggest that the standard FA has the lowest power consumption. Power consumption varies more than an order of magnitude for all subthreshold FAs, due to the statistical variations

Power Efficient Analysis of MOS Current Mode Logic Based Delay Flip Flop

2021 ◽  
pp. 351-361
Author(s):  
Ramsha Suhail ◽  
Pragya Srivastava ◽  
Richa Yadav ◽  
Richa Srivastava
Keyword(s):  
Current Mode ◽  
Flip Flop ◽  
Power Efficient ◽  
Current Mode Logic
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