scholarly journals The Effect of Niobium and Rubidium Doping on the Energy Band Gap of a Lithium Tantalate (LiTaO3) Thin Film

2021 ◽  
Vol 32 (2) ◽  
pp. 1-5
Author(s):  
Agus Ismangil ◽  
Fatimah Arofiati Noor ◽  
Toto Winata
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Chemical Solution Deposition ◽  
Band Gap Energy ◽  
Chemical Solution ◽  
Energy Band Gap ◽  
Solution Deposition ◽  
Gap Energy ◽  
Niobium Doped

Chemical solution deposition (CSD) is a technique for making a film by keeping synthetic arrangements on the outer layer of the substrate. The outcomes show that the band gap energy of the LiTaO3 film is 1 eV. Electrons are more effectively invigorated to the valence band than to the conduction band on the grounds that the energy required is not excessively huge. Niobium-doped LiTaO3 film has a band gap energy of 1.15 eV. A large amount of energy is needed for electrons to be energized from the valence band to the conduction band. The rubidium-doped LiTaO3 film has a band gap energy of 1.30 eV.

LITAO3 CHARACTERIZATION OF RUBIDIUM ON TEMPERATURE VARIATIONS

2018 ◽  
Vol 1 (02) ◽  
pp. 54-59
Author(s):  
Agus Ismangil ◽  
Teguh Puja Negara
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Transmission Rate ◽  
Ferroelectric Material ◽  
Band Gap Energy ◽  
Ferroelectric Materials ◽  
Annealing Process ◽  
Optical Modulators ◽  
Gap Energy

One of the studies that recently attracted the attention of physicists is research on ferroelectric material because this material is very promising for the development of new generation devices in connection with the unique properties it has. Ferroelectric materials, especially those based on a mixture of lithium tantalite (LiTaO3), are expected to be applied to the infrared sensor. Lithium tantalate (LiTaO3) is a ferroelectric material that is unique in terms of pyroelectric and piezoelectric properties that are integrated with good mechanical and chemical stability. Therefore LiTaO3 is often used for several applications such as electro-optical modulators and pyroelectric detectors. LiTaO3 is a non-hygroscopic crystal, colorless, soluble in water, has a high transmission rate and does not easily damage its optical properties. LiTaO3 is a material that has a high dielectric constant and a high load storage capacity. This research has succeeded in determining the band gap energy of the LiTaO3 film in the rubidium chamber obtained in the range of values 2.02-2.98 eV as shown in figure 4. The LiTaO3 film after the annealing process at a temperature of 650 oC, has the highest band gap energy of 2.98 eV. Large energy is needed on the electrons to be excited from the valence band to the conduction band. Whereas in the LiTaO3 film after an annealing process of 800 oC, the band gap energy obtained is 2.02 eV. This makes it easier for electrons to be excited from the valence band to the conduction band because the energy needed is not too large.

Study of Band Alignment at CBD-CdS/Cu(In1-xGax)Se2 (x = 0.2 - 1.0) Interfaces by Photoemission and Inverse Photoemission Spectroscopy

2007 ◽  
Vol 1012 ◽  
Author(s):  
Shimpei Teshima ◽  
Hirotake Kashiwabara ◽  
Keimei Masamoto ◽  
Kazuya Kikunaga ◽  
Kazunori Takeshita ◽  
...  
Keyword(s):  
Band Gap ◽  
Conduction Band ◽  
Valence Band Maximum ◽  
Band Gap Energy ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Gap Energy ◽  
Conduction Band Offset ◽  
Inverse Photoemission ◽  
Inverse Photoemission Spectroscopy

AbstractDependence of band alignments at interfaces between CdS by chemical bath deposition and Cu(In1-xGax)Se2 by conventional 3-stage co-evaporation on Ga substitution ratio x from 0.2 to 1.0 has been systematically studied by means of photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). For the specimens of the In-rich CIGS, conduction band minimum (CBM) by CIGS was lower than that of CdS. Conduction band offset of them was positive about +0.3 ~ +0.4 eV. Almost flat conduction band alignment was realized at x = 0.4 ~ 0.5. On the other hand, at the interfaces over the Ga-rich CIGS, CBM of CIGS was higher than that of CdS, and CBO became negative. The present study reveals that the decrease of CBO with a rise of x presents over the wide rage of x, which results in the sign change of CBO around 0.4 ~ 0.45. In the Ga-rich interfaces, the minimum of band gap energy, which corresponded to energy spacing between CBM of CdS and valence band maximum of CIGS, was almost identical against the change of band gap energy of CIGS. Additionally, local accumulation of oxygen related impurities was observed at the Ga-rich samples, which might cause the local rise of band edges in central region of the interface.

Band gap energy and valence band splitting of p-CdIn2Te4 crystal by photocurrent spectroscopy

2004 ◽  
Vol 95 (8) ◽  
pp. 4042-4045 ◽  
Author(s):  
S. H. You ◽  
K. J. Hong ◽  
T. S. Jeong ◽  
C. J. Youn ◽  
J. S. Park ◽  
...  
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Band Splitting ◽  
Photocurrent Spectroscopy ◽  
Valence Band Splitting

Growth Model of Epitaxial Pb(Zr0.52Ti0.48)O3 Nanoislands

2003 ◽  
Vol 784 ◽  
Author(s):  
Ming-Wen Chu ◽  
Izabela Szafraniak ◽  
Roland Scholz ◽  
Dietrich Hesse ◽  
Marin Alexe ◽  
...  
Keyword(s):  
Growth Model ◽  
Chemical Solution Deposition ◽  
Average Height ◽  
Misfit Dislocations ◽  
Chemical Solution ◽  
Cross Sectional ◽  
Solution Deposition ◽  
Edge Type ◽  
Niobium Doped ◽  
Truncated Pyramid

ABSTRACTSingle-crystalline, single-c-domain Pb(Zr0.52Ti0.48)O3 nanoislands (truncated-pyramid in shape) with an average height of ∼9 nm and a base length of ∼50 nm were grown on compressive niobium-doped SrTiO3(001) substrates using chemical solution deposition. Cross-sectional highresolution electron microscopy investigations allowed to propose a growth model of the islands, and they proved the existence of edge-type misfit dislocations at the interface.

scholarly journals UJI UV-VIS LAPISAN TiO2/N2 UNTUK MENENTUKAN BAND GAP ENERGY

2018 ◽  
Vol 3 (2) ◽  
pp. 6-10
Author(s):  
Devi Indriani ◽  
Helga Dwi Fahyuan ◽  
Ngatijo Ngatijo
Keyword(s):  
Band Gap ◽  
Wavelength Range ◽  
Energy Band ◽  
Nitrogen Doping ◽  
Band Gap Energy ◽  
Tio2 Layer ◽  
Energy Band Gap ◽  
Gap Energy ◽  
Transmittance Band

[Title: TEST UV-VIS LAYER TiO2/N2 FOR DETERMINING BAND GAP ENERGY] The effect of nitrogen doping variation on energy band gap in TiO2 layer grown by doctor blade technique. The TiO2/N2 layer was prepared with concentrations of 0%, 15%, 25% and 25% calcined at 500°C for 3 hours. Characterization of band gap energy by using the UV-Vis spectrometer at a wavelength range of 200 nm-700 nm. The band gap energy is obtained by using the Swanepoel equation and Touch Plot method. The results showed that doping of nitrogen can decrease the band gap energy of 3.9250 eV, 3.8750 eV, 3.8375 eV and 3.9125 eV, respectively. The smallest energy band gap is obtained at 25% concentration that is 3.8375eV. Keywords: Coating TiO2/N2, transmittance, Band gap energy

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