scholarly journals Processing Techniques with Heating Conditions for Multiferroic Systems of BiFeO3, BaTiO3, PbTiO3, CaTiO3 Thin Films

2021 ◽  
Author(s):  
Kuldeep Chand Verma ◽  
Manpreet Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Phenomenon ◽  
Synthesis Methods ◽  
Device Performance ◽  
Free Film ◽  
Thin Film Fabrication ◽  
Chip Size ◽  
Film Fabrication ◽  
Long Range Ordering

In this chapter, we have report a list of synthesis methods (including both synthesis steps & heating conditions) used for thin film fabrication of perovskite ABO3 (BiFeO3, BaTiO3, PbTiO3 and CaTiO3) based multiferroics (in both single-phase and composite materials). The processing of high quality multiferroic thin film have some features like epitaxial strain, physical phenomenon at atomic-level, interfacial coupling parameters to enhance device performance. Since these multiferroic thin films have ME properties such as electrical (dielectric, magnetoelectric coefficient & MC) and magnetic (ferromagnetic, magnetic susceptibility etc.) are heat sensitive, i.e. ME response at low as well as higher temperature might to enhance the device performance respect with long range ordering. The magnetoelectric coupling between ferromagnetism and ferroelectricity in multiferroic becomes suitable in the application of spintronics, memory and logic devices, and microelectronic memory or piezoelectric devices. In comparison with bulk multiferroic, the fabrication of multiferroic thin film with different structural geometries on substrate has reducible clamping effect. A brief procedure for multiferroic thin film fabrication in terms of their thermal conditions (temperature for film processing and annealing for crystallization) are described. Each synthesis methods have its own characteristic phenomenon in terms of film thickness, defects formation, crack free film, density, chip size, easier steps and availability etc. been described. A brief study towards phase structure and ME coupling for each multiferroic system of BiFeO3, BaTiO3, PbTiO3 and CaTiO3 is shown.

Reducing Thermal Effect on Thermoelectric Thin Films Fabrication Using Mechanical Chopper Coupling with CO2 Laser Ablation

2013 ◽  
Vol 770 ◽  
pp. 358-361
Author(s):  
Rakdiaw Muangma ◽  
Voravit Kosalathip ◽  
Taswal Kumpeerapun ◽  
Pichet Limsuwan ◽  
Anne Dauscher
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Thermal Effect ◽  
Exposure Time ◽  
Average Power ◽  
Vacuum System ◽  
Thin Film Fabrication ◽  
Film Fabrication ◽  
Mechanical Chopper

The aim of this experiment was to use mechanical chopper coupling with CO2 laser ablation to reduce thermal effect on thermoelectric thin film fabrication. The average power at 10 W of sealed tube CO2 laser together with the mechanical chopper was used for the thermoelectric (TE) thin film fabrication on silicon substrate in vacuum system. The 1.02 ms of pulse duration with 600 Hz of repetition rate were generated by the optimized speed of chopper at 4500 rpm with 8 channels of circular apertures which were used for the reduction of thermal effect on the bismuth antimony telluride (Bi-Sb-Te) target. The experiment results illustrated the thickness and the thin films fabricated by using 10 seconds of exposure time with the chopper, illustrated the smaller grain size than without the chopper while the thickness increased as the exposure time increased at constant speed of chopper. The output efficiency referred to the ratio of the thickness per target lost in unit time which increased from 19.6 to 181.8 μm/g per hour, due to the increase of the exposure time with the chopper while without the chopper resulted in 55.0 μm/g per hour caused by the higher temperature raise on the thermoelectric target which affected to the as-deposited thin films and the re-evaporation occurred. In this experiment, the chopper speed was measured by the digital tachometer, the target loss was analyzed by the digital analytical balance and the morphology of the 600 tilted surface of thin film was characterized by scanning electron microscope (SEM).

scholarly journals Thin film fabrication and characterization of proton conducting lanthanum tungstate

2014 ◽  
Vol 2 (43) ◽  
pp. 18463-18471 ◽  
Author(s):  
Kristin Bergum ◽  
Anna Magrasó ◽  
Helmer Fjellvåg ◽  
Ola Nilsen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Impedance Spectroscopy ◽  
Atomic Layer ◽  
Proton Conducting ◽  
Thin Film Fabrication ◽  
Layer Deposition ◽  
Film Fabrication ◽  
Fabrication And Characterization

Thin films of the proton conducting lanthanum tungstate phase, La28−xW4+xO54+δv2−δ, were fabricated by atomic layer deposition (ALD) and characterized by impedance spectroscopy.

scholarly journals Inducing Crystallinity of Metal Thin Films with Weak Magnetic Fields without Thermal Annealing

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 362 ◽  
Author(s):  
Stefan Ručman ◽  
Winita Punyodom ◽  
Jaroon Jakmunee ◽  
Pisith Singjai
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Films ◽  
Energy Efficient ◽  
Environmentally Friendly ◽  
Nitrogen Flow ◽  
Pure Nitrogen ◽  
Atmospheric Air ◽  
Thin Film Fabrication ◽  
Film Fabrication

Since the discovery of thin films, it has been known that higher crystallinity demands higher temperatures, making the process inadequate for energy-efficient and environmentally friendly methods of thin film fabrication. We resolved this problem by sparking metal wires in a 0.4 Tesla magnetic field at ambient conditions under ultra-pure nitrogen flow to replace the annealing of thin films, and thus designed an environmentally friendly and energy-efficient thin film fabrication method. We employed grazing incidence X-Ray Diffraction spectroscopy to characterize crystallinity of Iron, Nickel, Copper and Tungsten thin films prepared by a sparking discharge process in the presence of 0.4 T magnetic field at an ambient temperature of 25 °C. Control experiment was conducted by sparking without a magnetic field present and using ultra-pure nitrogen flow and ambient air containing oxygen. The Iron thin film prepared in ultra-pure nitrogen flow preserved crystallinity even after one year of ageing. Nickel exhibited higher crystallinity when sparked in nitrogen gas flow than when sparked in atmospheric air and was the only element to crystalize under atmospheric air. Tungsten successfully crystalized after just 40 min of sparking and aluminium failed to crystalize at all, even after 12 h of sparking under nitrogen flow.

High entropy silicides: CALPHAD-guided prediction and thin film fabrication

2021 ◽  
Vol 201 ◽  
pp. 113914
Author(s):  
Alexandra L. Vyatskikh ◽  
Benjamin E. MacDonald ◽  
Alexander D. Dupuy ◽  
Enrique J. Lavernia ◽  
Julie M. Schoenung ◽  
...  
Keyword(s):  
Thin Film ◽  
High Entropy ◽  
Thin Film Fabrication ◽  
Film Fabrication

Magnetic τ-MnAlC thin film fabrication by high-vacuum thermal evaporation

2021 ◽  
pp. 129657
Author(s):  
J.D. Gamez ◽  
H. Martínez-Sánchez ◽  
J.L. Valenzuela ◽  
L. Marín ◽  
L.A. Rodríguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Evaporation ◽  
High Vacuum ◽  
Thin Film Fabrication ◽  
Vacuum Thermal Evaporation ◽  
Film Fabrication

OLED thin film fabrication from poorly soluble terbium o -phenoxybenzoate through soluble mixed-ligand complexes

2016 ◽  
Vol 28 ◽  
pp. 319-329 ◽  
Author(s):  
Alena S. Kalyakina ◽  
Valentina V. Utochnikova ◽  
Elena Yu. Sokolova ◽  
Andrey A. Vashchenko ◽  
Leonid S. Lepnev ◽  
...  
Keyword(s):  
Thin Film ◽  
Mixed Ligand ◽  
Mixed Ligand Complexes ◽  
Thin Film Fabrication ◽  
Poorly Soluble ◽  
Film Fabrication

Chloroform-soluble poly(o-methoxyaniline) for ultra-thin film fabrication

1992 ◽  
Vol 221 (1-2) ◽  
pp. 5-8 ◽  
Author(s):  
R.M. Faria ◽  
L.H.C. Mattoso ◽  
M. Ferreira ◽  
O.N. Oliveira ◽  
D. Gonçalves ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Fabrication ◽  
Film Fabrication ◽  
Soluble Poly ◽  
Ultra Thin Film

Indium oxide co-doped with tin and zinc: A simple route to highly conducting high density targets for TCO thin-film fabrication

2012 ◽  
Vol 14 (7) ◽  
pp. 914-919 ◽  
Author(s):  
I. Saadeddin ◽  
H.S. Hilal ◽  
R. Decourt ◽  
G. Campet ◽  
B. Pecquenard
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
High Density ◽  
Simple Route ◽  
Thin Film Fabrication ◽  
Film Fabrication ◽  
Co Doped

Effect for Micro-Transformer Using Different Substrate Materials

2011 ◽  
Vol 135-136 ◽  
pp. 484-486
Author(s):  
Xiao Wei Hou ◽  
Shi Bin Liu ◽  
Jie Chang
Keyword(s):  
Thin Film ◽  
Substrate Material ◽  
Main Function ◽  
Voltage Gain ◽  
Thin Film Fabrication ◽  
Surface Configuration ◽  
Parasitic Effect ◽  
Film Fabrication ◽  
Materials Used ◽  
Quartz Ceramics

The main function of the substrate is to sustain and improve the performance of the thin-film. The property and surface configuration of the substrate material have a huge influence on the characteristics of the thin-film. Fabrication of substrate for the micro-transformer can choose a variety of materials, including the silicon, metal, glass, quartz, ceramics, plastics, polymer, etc. Different materials used as substrate have different effects on voltage gain and insertion loss of the transformer. At present, the silicon is used in most cases for its excellent properties. However, it is increasingly found that there exists some problems to gain better performance, such as the parasitic effect. And so, to employ other materials is essential. This paper discusses the effects induced by using different substrate materials. Through the analysis, a general cognition about how to choose the materials can be obtained, which is helpful to design and fabrication of the micro-transformer.

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