Primeiro registro de <i>Parasaissetia nigra</i> e hemípteros associados às variedades de mangabeira <i>Hancornia speciosa</i>

Jéssica Ferreira Silva; Jaqueline Magalhães Pereira; Charlles Brandão Silva Rocha; André Júnio Andrade Peres

doi:10.5902/1980509848381

Primeiro registro de Parasaissetia nigra e hemípteros associados às variedades de mangabeira Hancornia speciosa

Ciência Florestal ◽

10.5902/1980509848381 ◽

2021 ◽

Vol 31 (4) ◽

pp. 2023-2034

Author(s):

Jéssica Ferreira Silva ◽

Jaqueline Magalhães Pereira ◽

Charlles Brandão Silva Rocha ◽

André Júnio Andrade Peres

Keyword(s):

Ex Situ ◽

Hancornia Speciosa

A mangabeira Hancornia speciosa é uma frutífera nativa do Cerrado utilizada para consumo in natura e fabricação de sorvetes, doces, geleias, entre outros. Essa espécie pode abrigar insetos e ácaros, associados a diferentes fases fenológicas da planta. Por isso, o objetivo deste estudo foi verificar a ocorrência de insetos da ordem Hemiptera em Hancornia speciosa. Para tanto, foram realizadas coletas na coleção de germoplasma ex situ de espécies nativas da Escola de Agronomia, UFG, Goiânia – GO, em quatro variedades de Hancornia speciosa (speciosa, cuyabensis, gardneri e pubescens). Para cada variedade foram selecionadas oito plantas aleatoriamente. De cada planta, foram coletados dois ramos/planta no terço médio. Os ramos foram acondicionados em sacos plásticos, etiquetados e transportados para o laboratório para avaliação. As coletas ocorreram em média a cada 15 dias, no período de janeiro a dezembro de 2016. A superfamília Coccoidea e as famílias Aleyrodidae e Aphididae foram predominantes nas coletas. No estudo, foram observados 1.163 indivíduos de Parasaissetia nigra em Hancornia speciosa variedade cuyabensis. Este é o primeiro relato de ocorrência de Parasaissetia nigra em mangabeira. Quanto à interação entre insetos e a mangabeira, verifica-se que as variedades diferiram quanto à abundância de hemípteros. A família Aleyrodidae foi abundante na variedade gardneri, correspondendo a 49,84% dos indivíduos e a variedade pubescens em relação aos pulgões (Aphididae).

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Thrips species associated with varieties of the native cerrado fruit tree Hancornia speciosa

Revista Brasileira de Fruticultura ◽

10.1590/0100-29452019053 ◽

2019 ◽

Vol 41 (5) ◽

Author(s):

Jéssica Ferreira Silva ◽

Jaqueline Magalhães Pereira ◽

Charlles Brandão Silva Rocha ◽

André Júnio Andrade Peres ◽

Élison Fabrício Bezerra Lima

Keyword(s):

Native Species ◽

Fruit Tree ◽

Ex Situ ◽

High Abundance ◽

Brazilian Cerrado ◽

Germplasm Bank ◽

Thrips Species ◽

The Family ◽

Hancornia Speciosa ◽

First Time

Abstract Studies of insects associated with the fruit tree Hancornia speciosa Gomes (Apocynaceae), a native of the Brazilian Cerrado popularly known as “mangabeira”, are generally restricted to reports from seedling nurseries. Thrips predominate among insects that attack this crop. This study investigated the species of Thysanoptera that use this native fruit as a host, and which variety they prefer. The H. speciosa varieties speciosa s.str., cuyabensis, gardneri and pubescens were obtained from the collections of the ex-situ germplasm bank of native species at the Escola de Agronomia, Universidade Federal de Goiás, Goiânia, Brazil. Evaluations were conducted from January through December 2016. A total of 1679 individual thrips were identified. Thrips were most abundant on pubescens (79.08%), followed by gardneri (15.02%), cuyabensis (4.71%), and speciosa (1.19%). Representatives of the family Thripidae predominated in all collections, especially Coremothrips nubiculus and Heliothrips longisensibilis. The foliar trichomes present in var. pubescens may account for the high abundance of thrips on this variety. Heliothrips longisensibilis is recorded in Brazil for the first time.

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Conservação in vitro de mangabeira da região nordeste do Brasil

Ciência Rural ◽

10.1590/s0103-84782011000100010 ◽

2011 ◽

Vol 41 (1) ◽

pp. 57-62 ◽

Cited By ~ 5

Author(s):

Aline de Jesus Sá ◽

Ana da Silva Lédo ◽

Carlos Alberto da Silva Lédo

Keyword(s):

Ex Situ ◽

Hancornia Speciosa

A mangabeira (Hancornia speciosa Gomes) é uma espécie cujas regiões de ocorrência natural vêm sofrendo grande pressão antrópica, a qual está provocando erosão genética em muitas populações nativas, principalmente da região Nordeste. Em virtude da existência de poucas coleções de mangabeira conservadas ex situ, evidencia-se a importância do desenvolvimento de um método alternativo e complementar para a conservação de germoplasma dessa espécie. A utilização de técnicas de cultura de tecidos de plantas para a conservação de recursos genéticos apresenta diversas vantagens sobre a conservação de germoplasma no campo, destacando-se a economia de recursos financeiros para a manutenção das coleções, redução de riscos fitossanitários e intempéries climáticas. Por esse motivo, o presente trabalho teve como objetivo avaliar a eficiência de regulador osmótico (manitol) e inibidor de crescimento (ácido abscísico) na conservação in vitro de microestacas de mangabeira por crescimento lento. As culturas foram mantidas em meio MS com 3% de sacarose e 0,6% de agar. Os experimentos foram conduzidos em delineamento inteiramente casualizado, em sala de crescimento com temperatura variando de 26±2°C, umidade relativa do ar média em torno de 70% e fotoperíodo de 12 horas de luz branca fria (52µmol m-2 s-1 de irradiância). Foram avaliadas cinco concentrações de manitol (0, 10, 15 e 20g L-1). Na presença de manitol, o comprimento da parte aérea apresentou valores numéricos inferiores à testemunha, mas, aos 90 dias de cultivo in vitro, foi observado efeito deletério do manitol nas microestacas. Em relação ao ácido abscísico, foram testadas cinco concentrações (0; 0,5; 1; 2 e 4mg L-1) em interação com dois tipos de vedação de frascos (tampa plástica rosqueada e papel alumínio) e dois tipos de explantes (microestacas apicais e basais). O ácido abscísico (0,5mg L 1) apresentou melhores resultados para a conservação in vitro de microestacas de plântulas de mangabeira cultivadas em frascos vedados com papel alumínio. Não houve efeito significativo do tipo de explante.

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Seed germination in natural populations of Hancornia speciosa

Diversitas Journal ◽

10.17648/diversitas-journal-v6i1-1444 ◽

2021 ◽

Vol 6 (1) ◽

pp. 376-395

Author(s):

Guilherme Rocha dos Santos ◽

Wagner de Melo Ferreira ◽

Ronaldo Rodrigues Coimbra

Keyword(s):

Seed Germination ◽

Time Variation ◽

Natural Populations ◽

Ex Situ ◽

Average Speed ◽

Randomized Design ◽

Different Populations ◽

Completely Randomized Design ◽

Hancornia Speciosa ◽

Mean Time

ABSTRACT: The objective of the current study was to assay the germination behavior of seeds from fruits collected from three natural populations of H. speciosa, located in remnant areas of Cerrado in the municipality of Porto Nacional, Tocantins state, Brazil. The studied populations were: Canaã, São Judas Tadeu and Providência. Seven genotypes were selected from each population and twenty fruits of each genotype were collected. After ripening, the fruits were manually pulped and seeds of the same genotype pooled. After cleaning, removing adhered pulp and exterior sterilization, seeds were sown in a nursery. The experimental used a Completely Randomized Design (CRD) with three replications. Four seeds of each genotype were sown per polyethylene bag and the germination monitored until the 45th day after sowing. Variables used to assay germination behavior were: Germination (G,%); Mean Time of Germination (MTG, days); Average Speed of Germination (ASG, d-1), Germination Time Variation Coefficient (VCt) and Germination Synchrony Index (Z). For germination data, nonparametric Kruskal-Wallis analysis of variance was performed, followed by Dunn's test at 5% probability. There was a difference between populations for all germination variables, with the Providência population performing the best. The variables MTG, ASG and Z were significantly higher for the Providencia population. In absolute terms, the Providencia population had the highest percentage of germination (G), but did not differ significantly from the São Judas Tadeu population. The results generated are important for understanding the germination of seeds of different populations of H. speciosa. This information is relevant for the ex situ spread of the species. KEYWORDS: Cerrado, mangabeira, conservation.

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An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010648x ◽

1988 ◽

Vol 46 ◽

pp. 884-885

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove ◽

R. T. Tung

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Defect Density ◽

High Vacuum ◽

Ultra High Vacuum ◽

Ex Situ ◽

Metal Base ◽

In Situ Experiments ◽

Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100150046 ◽

1993 ◽

Vol 51 ◽

pp. 842-843

Author(s):

K. Barmak

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Transformations ◽

Analytical Electron Microscopy ◽

Ex Situ ◽

Multilayer Thin Films ◽

Absolute Concentration ◽

Analytical Electron ◽

Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154287 ◽

1989 ◽

Vol 47 ◽

pp. 462-463

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Diffraction ◽

High Vacuum ◽

High Energy ◽

Energy Electron ◽

Ultra High Vacuum ◽

Ex Situ ◽

Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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Interfacial properties of GaSb/InAs superlattices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149969 ◽

1993 ◽

Vol 51 ◽

pp. 826-827

Author(s):

M. E. Twigg ◽

B. R. Bennett ◽

J. R. Waterman ◽

J. L. Davis ◽

B. V. Shanabrook ◽

...

Keyword(s):

Gaas Substrate ◽

Molecular Beam ◽

Infrared Detector ◽

Interfacial Properties ◽

Ex Situ ◽

X Ray Diffraction ◽

Absorption Coefficients ◽

X Ray ◽

Short Period ◽

High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

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