Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor

2019 ◽  
Vol 58 (SI) ◽  
pp. SIIB05
Author(s):  
Takuya Kawazu ◽  
Takeshi Noda ◽  
Yoshiki Sakuma
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Heterojunction ◽  
Effect Transistor ◽  
Gate Edge

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design

2020 ◽  
Vol 59 (3) ◽  
pp. 034001
Author(s):  
Suyuan Wang ◽  
Qiang Wu ◽  
Jun Zheng ◽  
Bin Zhang ◽  
Jianghong Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Short Channel ◽  
Double Heterojunction ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor

2020 ◽  
Vol 20 (8) ◽  
pp. 4699-4703
Author(s):  
Hyun-Dong Song ◽  
Hyeong-Sub Song ◽  
Sunil Babu Eadi ◽  
Hyun-Woong Choi ◽  
Ga-Won Lee ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Increase With Increase ◽  
Effect Transistor ◽  
Insulator Substrate

In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage. Further, the TFET noise decreases with increase in temperature. Therefore, the effective tunneling length between the source and the channel appears to decrease and Poole–Frenkel tunneling occurs.

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