Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FF01
Author(s):  
Yongxun Liu ◽  
Ruofeng Guo ◽  
Takahiro Kamei ◽  
Takashi Matsukawa ◽  
Kazuhiko Endo ◽  
...  
Keyword(s):  
Experimental Study ◽  
Metal Oxide ◽  
Flash Memory ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Operating Voltage ◽  
Cross Sectional

On the methodology of calculating volume charge density in a MIFGMOS substrate using Poisson’s equation

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Francisco Javier Plascencia Jauregui ◽  
Agustín Santiago Medina Vazquez ◽  
Edwin Christian Becerra Alvarez ◽  
José Manuel Arce Zavala ◽  
Sandra Fabiola Flores Ruiz
Keyword(s):  
Metal Oxide ◽  
Charge Density ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Poisson’S Equation ◽  
Oxide Semiconductor ◽  
Volume Charge ◽  
Poisson's Equation ◽  
Content Type ◽  
Volume Charge Density

Purpose This study aims to present a mathematical method based on Poisson’s equation to calculate the voltage and volume charge density formed in the substrate under the floating gate area of a multiple-input floating-gate metal-oxide semiconductor metal-oxide semiconductor (MOS) transistor. Design/methodology/approach Based on this method, the authors calculate electric fields and electric potentials from the charges generated when voltages are applied to the control gates (CG). This technique allows us to consider cases when the floating gate has any trapped charge generated during the manufacturing process. Moreover, the authors introduce a mathematical function to describe the potential behavior through the substrate. From the resultant electric field, the authors compute the volume charge density at different depths. Findings The authors generate some three-dimensional graphics to show the volume charge density behavior, which allows us to predict regions in which the volume charge density tends to increase. This will be determined by the voltages on terminals, which reveal the relationship between CG and volume charge density and will allow us to analyze some superior-order phenomena. Originality/value The procedure presented here and based on coordinates has not been reported before, and it is an aid to generate a model of the device and to build simulation tools in an analog design environment.

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

2014 ◽  
Vol 104 (26) ◽  
pp. 263507 ◽  
Author(s):  
SangHyeon Kim ◽  
Masafumi Yokoyama ◽  
Ryosho Nakane ◽  
Osamu Ichikawa ◽  
Takenori Osada ◽  
...  
Keyword(s):  
Experimental Study ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Vertical Scaling

Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

2009 ◽  
Vol 95 (3) ◽  
pp. 033118 ◽  
Author(s):  
Yanli Pei ◽  
Chengkuan Yin ◽  
Toshiya Kojima ◽  
Masahiko Nishijima ◽  
Takafumi Fukushima ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
High Density ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Memory Characteristics ◽  
Metal Oxide Semiconductor Capacitor

Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

2001 ◽  
Vol 40 (Part 2, No. 7B) ◽  
pp. L721-L723 ◽  
Author(s):  
Atsushi Kohno ◽  
Hideki Murakami ◽  
Mitsuhisa Ikeda ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Silicon Quantum Dot
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