Nanometer-scale crystallinity in In–Ga–Zn-oxide thin film deposited at room temperature observed by nanobeam electron diffraction

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.

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Stabilizing black-phase formamidinium perovskite formation at room temperature and high humidity

Science ◽

10.1126/science.abf7652 ◽

2021 ◽

Vol 371 (6536) ◽

pp. 1359-1364

Author(s):

Wei Hui ◽

Lingfeng Chao ◽

Hui Lu ◽

Fei Xia ◽

Qi Wei ◽

...

Keyword(s):

Thin Film ◽

Room Temperature ◽

Power Conversion ◽

Light Stress ◽

Continuous Light ◽

Nanometer Scale ◽

High Humidity ◽

Lead Iodide ◽

Vertically Aligned ◽

Grown Structure

The stabilization of black-phase formamidinium lead iodide (α-FAPbI3) perovskite under various environmental conditions is considered necessary for solar cells. However, challenges remain regarding the temperature sensitivity of α-FAPbI3 and the requirements for strict humidity control in its processing. Here we report the synthesis of stable α-FAPbI3, regardless of humidity and temperature, based on a vertically aligned lead iodide thin film grown from an ionic liquid, methylamine formate. The vertically grown structure has numerous nanometer-scale ion channels that facilitate the permeation of formamidinium iodide into the lead iodide thin films for fast and robust transformation to α-FAPbI3. A solar cell with a power-conversion efficiency of 24.1% was achieved. The unencapsulated cells retain 80 and 90% of their initial efficiencies for 500 hours at 85°C and continuous light stress, respectively.

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DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1053.332 ◽

2014 ◽

Vol 1053 ◽

pp. 332-336 ◽

Cited By ~ 1

Author(s):

Ya Qiao ◽

Yuan Lu ◽

Hua Yang ◽

Yong Shun Ling

Keyword(s):

Thin Film ◽

Phase Transition ◽

Magnetron Sputtering ◽

Vanadium Oxide ◽

Room Temperature ◽

Annealed Film ◽

Oxide Thin Film ◽

Temperature Phase ◽

Dc Magnetron Sputtering ◽

Main Component

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

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