A possible origin of room temperature ferromagnetism in Indium–Tin oxide thin film: Surface spin polarization and ferromagnetism

2011 ◽  
Vol 406 (17) ◽  
pp. 3166-3169 ◽  
Author(s):  
Bin Xia ◽  
Yu Wu ◽  
Hui Wen Ho ◽  
Chang Ke ◽  
Wen Dong Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Polarization ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Film Surface ◽  
Oxide Thin Film ◽  
Thin Film Surface ◽  
Surface Spin

scholarly journals Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO2 treated by H3PO4

RSC Advances ◽  
2019 ◽  
Vol 9 (53) ◽  
pp. 30715-30719 ◽  
Author(s):  
Wei Dou ◽  
Yuanyuan Tan
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Self Assembled

Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO2 immersed in 5% H3PO4 for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature.

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

scholarly journals Indium tin oxide thin film based saturable absorber for Q-switching in C-band region

2019 ◽  
Vol 1371 ◽  
pp. 012018
Author(s):  
N U H H Zalkepali ◽  
N A Awang ◽  
Y R Yuzaile ◽  
Z Zakaria ◽  
A A Latif ◽  
...  
Keyword(s):  
Thin Film ◽  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Band Region ◽  
Q Switching
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