Novel Nitrogen Profile Control Technology in Ultra Thin Gate Oxide for Deep Submicron CMOS

2000 ◽  
Author(s):  
T. Ogura ◽  
H. Kotaki ◽  
S. Kakimoto ◽  
S. Zaima ◽  
Y. Yasuda
Keyword(s):  
Gate Oxide ◽  
Deep Submicron ◽  
Control Technology ◽  
Profile Control ◽  
Submicron Cmos ◽  
Thin Gate Oxide

He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications

2001 ◽  
Vol 37 (12) ◽  
pp. 788 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Chien-Hao Chen ◽  
Chih-Wei Yang ◽  
Mo-Chiun Yu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Remote Plasma ◽  
Plasma Nitridation ◽  
Technology Applications ◽  
Submicron Cmos ◽  
Thin Gate Oxide

Characterization of Global Inversion Layer in Thin-Gate-Oxide Deep-Submicron p-MOSFETs

1998 ◽  
Vol 42 (3) ◽  
pp. 401-404
Author(s):  
Bin Yu ◽  
Kiyotaga Imai ◽  
Chenming Hu
Keyword(s):  
Inversion Layer ◽  
Gate Oxide ◽  
Deep Submicron ◽  
Thin Gate Oxide

Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology

2008 ◽  
Vol 48 (11-12) ◽  
pp. 1786-1790 ◽  
Author(s):  
Y.T. Chiang ◽  
Y.K. Fang ◽  
Y.J. Huang ◽  
T.H. Chou ◽  
S.Y. Yeh ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Submicron Cmos

Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1496-1502 ◽  
Author(s):  
Kunihiro Suzuki ◽  
Akira Satoh ◽  
Takayuki Aoyama ◽  
Itaru Namura ◽  
Fumihiko Inoue ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Deep Submicron ◽  
Thermal Budget ◽  
Dual Gate ◽  
Submicron Cmos

Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide

1995 ◽  
Author(s):  
Kunihiro Suzuki ◽  
Akira Satoh ◽  
Takayuki Aoyama ◽  
Itaru Namura ◽  
Fumihiko Inoue ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Deep Submicron ◽  
Thermal Budget ◽  
Dual Gate ◽  
Submicron Cmos

Deep Submicron CMOS Technology Using Top-Edge Round STI and Dual Gate Oxide for Low Power 256 M-Bit Mobile DRAM

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 1892-1896 ◽  
Author(s):  
Chihoon Lee ◽  
Donggun Park ◽  
Namhyuk Jo ◽  
Chanseong Hwang ◽  
Hyeong Joon Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Dual Gate ◽  
Submicron Cmos

Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors

2001 ◽  
Vol 48 (10) ◽  
pp. 2310-2316 ◽  
Author(s):  
In-Ho Nam ◽  
Jae Sung Sim ◽  
Sung In Hong ◽  
Byung-Gook Park ◽  
Jong Duk Lee ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Deep Submicron ◽  
Cmos Transistors ◽  
Submicron Cmos
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