On the electrical characteristics of the atomic layer deposition Al2O3/In0.53Ga0.47As MOSCAPs with various annealing processes

2013 ◽  
Author(s):  
Q.H Luc ◽  
E.Y Chang ◽  
H.D Trinh ◽  
H.Q Nguyen ◽  
B.T Tran ◽  
...  
2018 ◽  
Vol 61 (5) ◽  
pp. 280-285 ◽  
Author(s):  
Toshihide NABATAME ◽  
Masayuki KIMURA ◽  
Kazuya YUGE ◽  
Mari INOUE ◽  
Naoki IKEDA ◽  
...  

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.


2013 ◽  
Vol 210 (7) ◽  
pp. 1381-1385 ◽  
Author(s):  
Chee-Hong An ◽  
Chandreswar Mahata ◽  
Young-Chul Byun ◽  
Myung Soo Lee ◽  
Yu Seon Kang ◽  
...  

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