Multi-level Operation of a High-speed, Low Power Topological Switching Random-access Memory (TRAM) Based on a Ge Deficient GexTe/Sb2Te3 Superlattice

2016 ◽  
Author(s):  
H. Shirakawa ◽  
M. Takato ◽  
M. Araidai ◽  
T. Ohyanagi ◽  
N. Takaura ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Multi Level

scholarly journals Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

2020 ◽  
Vol 8 ◽  
pp. 674-680 ◽  
Author(s):  
Xiang Li ◽  
Shy-Jay Lin ◽  
Mahendra Dc ◽  
Yu-Ching Liao ◽  
Chengyang Yao ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetic Random Access Memory

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

2008 ◽  
Vol 93 (11) ◽  
pp. 113504 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hidenobu Muramatsu ◽  
Hiro Akinaga ◽  
Yukio Tamai ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Voltage Polarity ◽  
Resistance Random Access Memory
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