scholarly journals A New Approach for Detecting and Correcting Errors in the Satellite Communications Based on Hamming Error Correcting Code

2013 ◽  
pp. 227-231 ◽  
Author(s):  
Ashkan Masoomi ◽  
Roozbeh Hamzehiyan
Keyword(s):  
Error Correcting Code ◽  
Satellite Communications ◽  
New Approach ◽  
Hamming Error Correcting Code

New Approach to Salve Single Event Upsets Faults in Satellite Communications

2011 ◽  
Vol 110-116 ◽  
pp. 4161-4165
Author(s):  
Mahoomd Ghodratian ◽  
Ashkan Masoomi ◽  
Roozbeh Hamzehyan ◽  
Najmeh Cheraghi Shirazi
Keyword(s):  
Detailed Analysis ◽  
Error Correcting Code ◽  
Satellite Communications ◽  
Radiation Environment ◽  
Single Event ◽  
Imaging Data ◽  
Single Event Upsets ◽  
Ground Station ◽  
Hamming Error Correcting Code ◽  
The Impact

The encrypted satellite data can get corrupted before reaching the ground station due to various faults. One major source of faults is the harsh radiation environment. Single Even Upset (SEU) faults can occur on-board during encryption due to radiation. This paper presents a novel model to detect and correct Single Event Upsets in on-board implementations of the AES algorithm, which is based on Hamming error correcting code. From five modes of AES, CRT mode seems to be the best mode to encrypt satellite video and image links. A detailed analysis of the effect of SEUs on the imaging data during on-board encryption using the modes of AES is carried out. In this paper the impact of these faults on the data is discussed and compared for all the five modes of AES. A detailed analysis of the effect of SEUs on the imaging data during on-board encryption using the modes of AES is carried out.

Future Approach of Next Generation Cellular Mobile Communications

2012 ◽  
pp. 427-441
Author(s):  
Muzhir Shaban Al-Ani
Keyword(s):  
Mobile Communications ◽  
Communication Systems ◽  
New Technology ◽  
Satellite Communications ◽  
Mobile Systems ◽  
Next Generation ◽  
New Approach ◽  
Telecommunication Services ◽  
Set Up ◽  
Cellular Mobile

The tremendous use of telecommunication services and the existence of various types of mobile devices and networks impose a huge need for a new technology that can integrate these devices and networks to provide adequate services and applications to satisfy the user’s needs. The new technology tries to eliminate all boundaries of telecommunications and leads to a universal approach that is able to demonstrate an easy and efficient technique to overcome all technical and managerial issues. This chapter, first, studies and analyzes the performance of existing mobile systems and their services and estimates the future aspects of next generation mobile communications. Second, a new approach is proposed and investigated. The new approach is based on using the abilities of satellite communications as part of the mobile communication systems. Such an approach introduces advanced communication solutions that could be set up anywhere/anytime subject to the existence of satellite coverage.

scholarly journals In-Memory Hamming Error-Correcting Code in Memristor Crossbar

2021 ◽  
Author(s):  
Woorham Bae ◽  
Jin-Woo Han ◽  
Kyung Jean Yoon
Keyword(s):  
Integrated Circuit ◽  
Error Correcting Code ◽  
Current Mode ◽  
Cmos Process ◽  
Logic Device ◽  
Resistance State ◽  
Hamming Error Correcting Code ◽  
Memristor Crossbar ◽  
Exclusive Or ◽  
And Storage

This paper proposes a in-memory Hamming error-correcting code (ECC) in memristor crossbar array (CBA). Based on unique I-V characteristic of complementary resistive switching (CRS) memristor, this work discovers that a combination of three memristors behaves as a stateful exclusive-OR (XOR) logic device. In addition, a two-step (build-up and fire) current-mode CBA driving scheme is proposed to realize a linear increment of the build-up voltage that is proportional to the number of low-resistance state (LRS) memristors in the array. Combining the proposed XOR logic device and the driving scheme, we realize a complete stateful XOR logic, which enables a fully functional in-memory Hamming ECC, including parity bit generation and storage followed by syndrome vector calculation/readout. The proposed technique is verified by simulation program with integrated circuit emphasis (SPICE) simulations, with a Verilog-A CRS memristor model and a commercial 45-nm CMOS process design kit (PDK). The verification results prove that the proposed in-memory ECC perfectly detects error regardless of data patterns and error locations with enough margin.

scholarly journals In-Memory Hamming Error-Correcting Code in Memristor Crossbar

2021 ◽  
Author(s):  
Woorham Bae ◽  
Jin-Woo Han ◽  
Kyung Jean Yoon
Keyword(s):  
Integrated Circuit ◽  
Error Correcting Code ◽  
Current Mode ◽  
Cmos Process ◽  
Logic Device ◽  
Resistance State ◽  
Hamming Error Correcting Code ◽  
Memristor Crossbar ◽  
Exclusive Or ◽  
And Storage

This paper proposes a in-memory Hamming error-correcting code (ECC) in memristor crossbar array (CBA). Based on unique I-V characteristic of complementary resistive switching (CRS) memristor, this work discovers that a combination of three memristors behaves as a stateful exclusive-OR (XOR) logic device. In addition, a two-step (build-up and fire) current-mode CBA driving scheme is proposed to realize a linear increment of the build-up voltage that is proportional to the number of low-resistance state (LRS) memristors in the array. Combining the proposed XOR logic device and the driving scheme, we realize a complete stateful XOR logic, which enables a fully functional in-memory Hamming ECC, including parity bit generation and storage followed by syndrome vector calculation/readout. The proposed technique is verified by simulation program with integrated circuit emphasis (SPICE) simulations, with a Verilog-A CRS memristor model and a commercial 45-nm CMOS process design kit (PDK). The verification results prove that the proposed in-memory ECC perfectly detects error regardless of data patterns and error locations with enough margin.

The O–C diagrams of minor planets − a new approach to modelling the rotation

1999 ◽  
Vol 173 ◽  
pp. 185-188
Author(s):  
Gy. Szabó ◽  
K. Sárneczky ◽  
L.L. Kiss
Keyword(s):  
Error Analysis ◽  
Time Dependence ◽  
Theoretical Work ◽  
Minor Planet ◽  
Minor Planets ◽  
New Approach ◽  
Preliminary Results ◽  
Ccd Observations

AbstractA widely used tool in studying quasi-monoperiodic processes is the O–C diagram. This paper deals with the application of this diagram in minor planet studies. The main difference between our approach and the classical O–C diagram is that we transform the epoch (=time) dependence into the geocentric longitude domain. We outline a rotation modelling using this modified O–C and illustrate the abilities with detailed error analysis. The primary assumption, that the monotonity and the shape of this diagram is (almost) independent of the geometry of the asteroids is discussed and tested. The monotonity enables an unambiguous distinction between the prograde and retrograde rotation, thus the four-fold (or in some cases the two-fold) ambiguities can be avoided. This turned out to be the main advantage of the O–C examination. As an extension to the theoretical work, we present some preliminary results on 1727 Mette based on new CCD observations.

A New Approach to the Demonstration of Oxidase-Localization Using Tannic Acid Or Catechin

1973 ◽  
Vol 31 ◽  
pp. 698-699
Author(s):  
V. Mizuhira ◽  
Y. Futaesaku
Keyword(s):  
Cross Section ◽  
Tannic Acid ◽  
Elastic Fiber ◽  
The Other ◽  
New Approach ◽  
Tissue Block ◽  
Active Reaction ◽  
The Cross

Previously we reported that tannic acid is a very effective fixative for proteins including polypeptides. Especially, in the cross section of microtubules, thirteen submits in A-tubule and eleven in B-tubule could be observed very clearly. An elastic fiber could be demonstrated very clearly, as an electron opaque, homogeneous fiber. However, tannic acid did not penetrate into the deep portion of the tissue-block. So we tried Catechin. This shows almost the same chemical natures as that of proteins, as tannic acid. Moreover, we thought that catechin should have two active-reaction sites, one is phenol,and the other is catechole. Catechole site should react with osmium, to make Os- black. Phenol-site should react with peroxidase existing perhydroxide.

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