scholarly journals Rubrene Thin Films with Viably Enhanced Charge Transport Fabricated by Cryo-Matrix-Assisted Laser Evaporation

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4413
Author(s):  
Rafał Jendrzejewski ◽  
Natalia Majewska ◽  
Sayani Majumdar ◽  
Mirosław Sawczak ◽  
Jacek Ryl ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Carrier Mobility ◽  
Spin Diffusion ◽  
Photoelectron Spectra ◽  
Laser Evaporation ◽  
Ionization Mass ◽  
X Ray ◽  
Orthorhombic Crystals ◽  
Matrix Assisted Laser

Among organic semiconductors, rubrene (RB; C42H28) is of rapidly growing interest for the development of organic and hybrid electronics due to exceptionally long spin diffusion length and carrier mobility up to 20 cm2V−1s−1 in single crystals. However, the fabrication of RB thin films resembling properties of the bulk remains challenging, mainly because of the RB molecule’s twisted conformation. This hinders the formation of orthorhombic crystals with strong π–π interactions that support the band transport. In this work, RB films with a high crystalline content were fabricated by matrix-assisted laser evaporation and the associated structure, composition, and transport properties are investigated. Enhanced charge transport is ascribed to the crystalline content of the film. Spherulitic structures are observed on top of an amorphous RB layer formed in the initial deposition stage. In spherulites, orthorhombic crystals dominate, as confirmed by X-ray diffraction and the absorption and Raman spectra. Surprisingly, nanowires several microns in length are also detected. The desorption/ionization mass and X-ray photoelectron spectra consistently show minimal material decomposition and absence of RB peroxides. The observed carrier mobility up to 0.13 cm2V−1s−1, is close to the technologically accepted level, making these rubrene films attractive for spintronic and optoelectronic applications.

scholarly journals Effects of Solvent Vapor Annealing on Morphology and Charge Transport of Poly(3-hexylthiophene) (P3HT) Films Incorporated with Preformed P3HT Nanowires

Polymers ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 1188
Author(s):  
Mingu Jang ◽  
Yang-Il Huh ◽  
Mincheol Chang
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Carrier Mobility ◽  
Morphological Changes ◽  
Charge Carrier Mobility ◽  
Solvent Vapor ◽  
Molecular Ordering ◽  
Vapor Annealing ◽  
Solvent Vapor Annealing ◽  
Influence Of Solvent

We systematically studied the influence of solvent vapor annealing on the molecular ordering, morphologies, and charge transport properties of poly(3-hexylthiophene) (P3HT) thin films embedded with preformed crystalline P3HT nanowires (NWs). Solvent vapor annealing (SVA) with chloroform (CF) was found to profoundly impact on the structural and morphological changes, and thus on the charge transport characteristics, of the P3HT-NW-embedded P3HT films. With increased annealing time, the density of crystalline P3HT NWs was increased within the resultant films, and also intra- and intermolecular interactions of the corresponding films were significantly improved. As a result, the P3HT-NW-embedded P3HT films annealed with CF vapor for 20 min resulted in a maximized charge carrier mobility of ~0.102 cm2 V−1 s−1, which is higher than that of pristine P3HT films by 4.4-fold (μ = ~0.023 cm2 V−1 s−1).

Preparation and Properties of CuInS2 Thin-Film by Successive Ionic Layer Adsorption and Reaction (SILAR) Method

2007 ◽  
Vol 280-283 ◽  
pp. 877-880
Author(s):  
Zheng Guo Jin ◽  
Yong Shi ◽  
Ji Jun Qiu ◽  
Xiao Xin Liu
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Optical Absorption ◽  
Optical Absorption Spectrum ◽  
Photoelectron Spectra ◽  
Molar Ratio ◽  
Silar Method ◽  
X Ray ◽  
Cuins2 Thin Films ◽  
Ionic Layer

CuInS2 thin films were deposited on galss substrate by successive ionic layer absorption and reaction (SILAR) method at room temperature. CuCl2, InCl3, and Na2S were used as precursor materials. The thin films were obtained during the dipping of 20-40 cycles and after annealing in the N2 atmosphere at 500°C. The characterization of the film was carried out by X-ray diffraction, scanning electron microscopy, optical absorption spectrum and X-ray photoelectron spectra. Quantification of the XPS peaks shows that the molar ratio of Cu:In:S of the film is close to the stoichiometry of CuInS2. XRD result demonstrated that the formed compound is CuInS2 with chalcopyrites crystal structure. Direct band gap was found to be 1.5eV from optical absorption spectrum.

Platelet Adhesion Study and Characteristic of Hydrogenated Carbon Films Synthesized by PIII-D

2005 ◽  
Vol 288-289 ◽  
pp. 323-326 ◽  
Author(s):  
Feng Wen ◽  
Nan Huang ◽  
H. Sun ◽  
Ping Yang ◽  
Jin Wang
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Raman Spectra ◽  
Room Temperature ◽  
Platelet Adhesion ◽  
Carbon Films ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Composition And Structure ◽  
Amorphous Hydrogenated Carbon

Amorphous hydrogenated carbon (a-C:H) thin films were deposited on silicon wafers and Ti6Al4V substrate using plasma ion immersion implantation and deposition (PIII-D) at room temperature (R.T.). The composition and structure of a-C:H films were employed by X-ray photoelectron spectra (XPS) and Raman spectra. Nano-indenter tests measured the hardness of the films. In addition, wettability and bloodcompatibility were investigated. In this paper, the effects of hydrogen content on structure, mechanical properties, surface wettability and haemocompatibility were discussed.

Ultraviolet Irradiation Effects on and Depth Profiles in X-ray Photoelectron Spectra of Poly(vinylpyridine) Thin Films

2008 ◽  
Vol 47 (1) ◽  
pp. 432-437 ◽  
Author(s):  
Satoko Nishiyama ◽  
Masahiro Tajima ◽  
Yoshikata Nakajima ◽  
Tatsuro Hanajiri ◽  
Yasuhiko Yoshida
Keyword(s):  
Thin Films ◽  
Ultraviolet Irradiation ◽  
Photoelectron Spectra ◽  
Irradiation Effects ◽  
X Ray ◽  
Depth Profiles

Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 25 (S1) ◽  
pp. S36-S39 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Microstructure ◽  
Direct Preparation ◽  
Sno2 Thin Films ◽  
P Type ◽  
Reactive Rf Magnetron Sputtering

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

XPS and X-ray diffraction characterization of MoO3 thin films prepared by laser evaporation

2005 ◽  
Vol 2 (10) ◽  
pp. 3726-3729 ◽  
Author(s):  
J. Torres ◽  
J. E. Alfonso ◽  
L. D. López-Carreño
Keyword(s):  
Thin Films ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

scholarly journals Influence of fluorination in π-extended backbone polydiketopyrrolopyrroles on charge carrier mobility and depth-dependent molecular alignment

2015 ◽  
Vol 3 (34) ◽  
pp. 8916-8925 ◽  
Author(s):  
C. J. Mueller ◽  
E. Gann ◽  
C. R. McNeill ◽  
M. Thelakkat
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Grazing Incidence ◽  
Charge Carrier Mobility ◽  
Molecular Alignment ◽  
X Ray ◽  
X Ray Scattering ◽  
Semiconductor Properties ◽  
Ray Scattering

The degree of fluorination in π-extended polydiketopyrrolopyrroles is correlated with semiconductor properties in transistors and an improved molecular alignment in thin films using depth-dependent grazing incidence X-ray scattering.

Sign in / Sign up

Export Citation Format

Share Document