Modelling vibrations of axial piezoelectric generator with active base

Modelling of an axial-type piezoelectric generator (PEG) is considered. PEG is an integral part of the system for converting mechanical vibration energy from the environment into electrical energy. The energy generator has an axial type of the configuration of elements, aimed on using bending and compressive loads simultaneously on piezoelectric elements. The base of the generator is made as an active pinching. A feature of PEG is that the generator has two types of piezoelectric elements: (1) elements located on the substrate in the form of a bimorph and (2) piezoelectric elements of a cylindrical shape, fixing the generator base, located on the same axis. PEG has a symmetrical structure about the center of proof mass. The results of modal and harmonic analysis of vibrations are given for vibration excitation of the PEG base in a certain frequency range. The analysis of the output characteristics is given.

Rootedness, Activism, and Centralization: The Case of the Swiss People’s Party

The Swiss People’s Party (Schweizerische Volkspartei [SVP]) has increased its territorial extensiveness and organisational intensiveness in recent years, and has professionalised its strategies of communication. This article analyses the dynamics characterising the SVP’s organisation. It shows that with its locally rooted presence and its effort to generate ideological coherence, the party has embraced the “mass party” organisational model. It additionally assesses the extent to which the SVP’s centralised power at the federal level is conducive to the party’s further electoral success. Having considered both the party at national level and three of its most important cantonal branches, the article argues that the organisational dominance of the SVP’s central leadership was beneficial for the party’s electoral strength but will lead to tensions with cantonal and local branches, which are largely in charge, to build and maintain an active base.

Firepower

The National Rifle Association (NRA) is one of the most powerful interest groups in America, and has consistently managed to defeat or weaken proposed gun regulations — even despite widespread public support for stricter laws and the prevalence of mass shootings and gun-related deaths. This book provides an unprecedented look at how this controversial organization built its political power and deploys it on behalf of its pro-gun agenda. Taking readers from the 1930s to the age of Donald Trump, the book traces how the NRA's immense influence on national politics arises from its ability to shape the political outlooks and actions of its followers. The book draws on nearly a century of archival records and surveys to show how the organization has fashioned a distinct worldview around gun ownership and has used it to mobilize its supporters. It reveals how the NRA's cultivation of a large, unified, and active base has enabled it to build a resilient alliance with the Republican Party, and examines why the NRA and its members formed an important constituency that helped fuel Trump's unlikely political rise. The book sheds vital new light on how the NRA has grown powerful by mobilizing average Americans, and how it uses its GOP alliance to advance its objectives and shape the national agenda.

Manifestation of the channeling effect when manufacturing JFET transistors

TThe proposed work covers the tasks of such areas as reducing input currents and bias voltage of integrated operational amplifiers (ICs OA) manufactured according to BiFET technology, the prospect of using JFET transistors in digital circuit technology, Si CMOS technology at 22 nm node and beyond, manufacturing bipolar transistors on ultra-thin layers of the active base and emitter, increasing resistance of ICs to external influences. The main method of experimental investigation of channeling is the construction of impurity distribution profiles using SIMS. In this work to study the channeling effect of boron and phosphorus in silicon was chosen the method for constructing the response surface of the saturation current of JFET for a silicon wafer. The choice of method was based on the high sensitivity of the cut-off voltage and saturation current of the JFET transistor to the channel thickness and impurity concentration in it, the relative simplicity of performance and practical benefits in improving BiFET technology.