Perovskite Quantum Dot‐Ta 2 NiSe 5 Mixed‐Dimensional Van Der Waals Heterostructures for High‐Performance Near‐Infrared Photodetection

2021 ◽  
pp. 2110706
Author(s):  
Jie Qiao ◽  
Fu Feng ◽  
Shuang Song ◽  
Tao Wang ◽  
Mengyan Shen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Near Infrared ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Infrared Photodetection

scholarly journals High-performance near-infrared Schottky-photodetector based graphene/In2S3 van der Waals heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (40) ◽  
pp. 23662-23667
Author(s):  
Long Chen ◽  
Zhenghan Li ◽  
Chaoyi Yan
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Near Infrared ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Carrier Separation

The photodetectors based on graphene/In2S3 van der Waals heterostructures through junction carrier separation exhibited an excellent infrared performance of high photoresponsivity of 0.49 mA W−1, external quantum efficiency of 0.07%, and detectivity of 3.05 × 107 jones using an 808 nm laser.

Layer-dependent photocatalysts of GaN/SiC-based multilayer van der Waals heterojunctions for Hydrogen Evolution

2021 ◽  
Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Hydrogen Evolution ◽  
High Performance ◽  
Van Der Waals ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Van Der Waals Heterostructures ◽  
Composite Photocatalysts

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...

A conjugated polyelectrolyte interfacial modifier for high performance near-infrared quantum-dot photodetectors

2020 ◽  
Vol 8 (7) ◽  
pp. 2542-2550
Author(s):  
Moon-Ki Jeong ◽  
Jinhyeon Kang ◽  
Dasom Park ◽  
Sanggyu Yim ◽  
In Hwan Jung
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Near Infrared ◽  
Conjugated Polyelectrolytes ◽  
Conjugated Polyelectrolyte ◽  
Interfacial Modifier

The photodetection properties of near-infrared quantum-dot photodetectors (NIR-QPDs) were enhanced by introducing three kinds of novel cationic conjugated polyelectrolytes (CCPs).

Semiconductor plasmon enhanced monolayer upconversion nanoparticles for high performance narrowband near-infrared photodetection

Nano Energy ◽  
2019 ◽  
Vol 61 ◽  
pp. 211-220 ◽  
Author(s):  
Yanan Ji ◽  
Wen Xu ◽  
Dongyu Li ◽  
Donglei Zhou ◽  
Xu Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Upconversion Nanoparticles ◽  
Infrared Photodetection

scholarly journals Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3338
Author(s):  
Jiali Wang ◽  
Xiuwen Zhao ◽  
Guichao Hu ◽  
Junfeng Ren ◽  
Xiaobo Yuan
Keyword(s):  
Optical Properties ◽  
Absorption Coefficient ◽  
High Performance ◽  
Density Functional ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Electronic And Optical Properties ◽  
Wide Range ◽  
Direct Band

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.

scholarly journals Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor

2019 ◽  
Vol 114 (10) ◽  
pp. 103501 ◽  
Author(s):  
Ningning Li ◽  
Yao Wen ◽  
Ruiqing Cheng ◽  
Lei Yin ◽  
Feng Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Strongly Coupled

Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection

2015 ◽  
Vol 40 (10) ◽  
pp. 2401 ◽  
Author(s):  
Ming-Hao Kuo ◽  
Wei-Ting Lai ◽  
Sheng-Wei Lee ◽  
Yen-Chun Chen ◽  
Chia-Wei Chang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Near Infrared ◽  
Infrared Photodetection

scholarly journals Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Gang Xu ◽  
Yelu He
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
High Performance ◽  
Van Der Waals ◽  
Type I ◽  
Normal Strain ◽  
Van Der Waals Heterostructures ◽  
Electronic Band ◽  
Fundamental Research ◽  
Metal Phase Transition

In recent years, much interest in the study of Van der Waals heterostructures (vdWhs) has arisen. This has led to a significant amount of fundamental research being produced, from which novel optoelectronic applications have been established. By using first principles, we analyze the electronic structure of silicane/SnSe2 vdWhs in the response to an externally applied electric field and a normal strain. The results show that the silicane/SnSe2 vdWh acts as an indirect semiconductor when it is subjected to an applied electric field between −1 and 0.1 V/Å and becomes a metal in the 0.2 to 1 V/Å range. Significantly, the electronic band alignments of the silicane/SnSe2 vdWhs are modified from a type-II to a type-I when a field of −0.7 V/Å is applied. Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. Our results indicate that the silicane/SnSe2 vdWhs have the potential for applications in novel high-performance optoelectronic devices.

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