Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period

The effect of testing temperature and storage period on the polarization fatigue properties of poly (vinylidene fluoride-trifluoroethylene) (P(VDF–TrFE)) ultrathin film devices were investigated. The experimental results show that, even after stored in air for 150 days, the relative remanent polarization (Pr/Pr(0)) of P(VDF–TrFE) of ultrathin films can keep at a relatively high level of 0.80 at 25 °C and 0.70 at 60 °C. To account for this result, a hydrogen fluoride (HF) formation inhibition mechanism was proposed, which correlated the testing temperature and the storage period with the microstructure of P(VDF–TrFE) molecular chain. Moreover, a theoretical model was constructed to describe the polarization fatigue evolution of P(VDF–TrFE) samples.

Download Full-text

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

Surface Review and Letters ◽

10.1142/s0218625x10014351 ◽

2010 ◽

Vol 17 (05n06) ◽

pp. 445-449 ◽

Cited By ~ 1

Author(s):

SUHUA FAN ◽

QUANDE CHE ◽

FENGQING ZHANG

Keyword(s):

Thin Film ◽

Thin Films ◽

Ferroelectric Property ◽

Remanent Polarization ◽

Sol Gel ◽

Xrd Analysis ◽

Sem Analysis ◽

Si Substrate ◽

Degree Of Orientation ◽

Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Download Full-text

Effect of Drawing on the Crystal–Amorphous Interphase, Remanent Polarization and Dielectric Properties of α-PVDF Films

Ferroelectrics ◽

10.1080/00150193.2011.554263 ◽

2011 ◽

Vol 413 (1) ◽

pp. 220-230 ◽

Cited By ~ 8

Author(s):

A. B. Silva ◽

C. Wisniewski ◽

J. V. A. Esteves ◽

R. Gregorio

Keyword(s):

Dielectric Properties ◽

Remanent Polarization

Download Full-text

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.1781 ◽

2011 ◽

Vol 197-198 ◽

pp. 1781-1784

Author(s):

Hua Wang ◽

Jian Li ◽

Ji Wen Xu ◽

Ling Yang ◽

Shang Ju Zhou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Si Substrates ◽

Gel Processing ◽

Coercive Electric Field ◽

Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Download Full-text

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Download Full-text

Large remanent polarization and enhanced magnetic properties in non-quenched Bi(Fe,Ga)O3-(Ba,Ca)(Zr,Ti)O3 multiferroic ceramics

Applied Physics Letters ◽

10.1063/1.4978651 ◽

2017 ◽

Vol 110 (11) ◽

pp. 112902 ◽

Cited By ~ 10

Author(s):

Ningtao Liu ◽

Ruihong Liang ◽

Zhen Liu ◽

Zhiyong Zhou ◽

Chenhong Xu ◽

...

Keyword(s):

Magnetic Properties ◽

Remanent Polarization ◽

Large Remanent Polarization

Download Full-text

Structural and Dielectric Properties of Screen Printed PZT(70/30) Multilayered Thick Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.663 ◽

2007 ◽

Vol 124-126 ◽

pp. 663-666 ◽

Cited By ~ 2

Author(s):

Sung Gap Lee ◽

Sang Man Park ◽

Young Jae Shim ◽

Young Chul Rhee

Keyword(s):

Screen Printing ◽

Remanent Polarization ◽

Thick Films ◽

Sol Gel ◽

Relative Dielectric Constant ◽

Polycrystalline Structure ◽

Coating Solution ◽

Screen Printing Method ◽

Xrd Patterns ◽

Printing Method

PZT(70/30) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(30/70) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about 60~65μm. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of the PZT-6 thick film was 540. The remanent polarization and coercive field of the PZT-6 film were 23.6 μC /cm2, 12.0 kV/cm, respectively.

Download Full-text

Property Improvement of PLZT Capacitor Using CaRuO3 Top Electrode

MRS Proceedings ◽

10.1557/proc-655-cc4.6.1 ◽

2000 ◽

Vol 655 ◽

Author(s):

Hiroshi Funakubo ◽

Noriyuki Higashi ◽

Norikazu Okuda

Keyword(s):

Heat Treatment ◽

Fatigue Test ◽

Leakage Current ◽

Remanent Polarization

AbstractSrRuO3 and CaRuO3 films prepared by MOCVD were compared not only in term of their own properties but for their characteristics as the top electrodes of (Pb, La)(Zr, Ti)O3[PLZT] capacitor, especially for H2 degradation. Resistivity of CaRuO3 and SrRuO3 films increased after heat treatment in H2-containing atmosphere, but was recovered by a heat treatment at 600 °C under O2 atmosphere. When SrRuO3 and CaRuO3 films deposited at 600 °C were used as top electrodes, the remanent polarization(Pr) value of SrRuO3/PLZT/Pt and CaRuO3/PLZT/Pt capacitors were almost the same as the values for capacitors with a Pt top electrode. After a heat treatment in a 3 % H2 atmosphere at 200 °C, followed by one in O2 atmosphere at 450 °C, Pr value was perfectly recovered for both of SrRuO3 and CaRuO3 films. The leakage current become the smallest when using 50 nm-thick CaRuO3 film as a top electrode. Moreover, no degradation was observed for fatigue test up to 1010 cycles when MOCVD-CaRuO3 films were used as top electrodes. These data show that MOCVD-CaRuO3 film with thin thickness is a useful top electrode for PLZT capacitor.

Download Full-text

One-Axis-Oriented Crystal Growth of Lead Zirconate Titanate Thin Films on Metal Substrates Using Perovskite-Type Oxide Nanosheet Layer

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.582.15 ◽

2013 ◽

Vol 582 ◽

pp. 15-18

Author(s):

Y. Minemura ◽

Y. Kondoh ◽

H. Funakubo ◽

Hiroshi Uchida

Keyword(s):

Lead Zirconate Titanate ◽

Remanent Polarization ◽

Lead Zirconate ◽

Chemical Solution ◽

Oriented Crystal ◽

Solution Deposition ◽

Pzt Film ◽

Perovskite Type Oxide ◽

Pzt Films ◽

Perovskite Type

One-axis-oriented Pb (Zr,Ti)O3(PZT) films were fabricated using a chemical solution deposition technique on (111)Pt/TiO2/(100)Si and Inconel625 substrates buffered by nanosheet Ca2Nb3O10(ns-CN). The (001)-oriented PZT crystals (Zr/Ti=0.40:0.60, tetragonal) were preferentially grown on (001)ns-CN/Inconel625, whereas the PZT crystals deposited on (001)ns-CN/(111)Pt/ TiO2/(100)Si exhibited preferential PZT(100) orientation. The resulting PZT film on (001)ns-CN/Inconel625 indicated remanent polarization of approximately 59 μC/cm2, which was significantly larger than that on (001)ns-CN/(111)Pt/TiO2/(100)Si.

Download Full-text

Properties of RF Magnetron Sputtered Sr0.4Ba0.6Nb1.85Ta0.15O6 Thin Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.284-287.193 ◽

2013 ◽

Vol 284-287 ◽

pp. 193-197

Author(s):

Cheng Fu Yang ◽

Wen Cheng Tzou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Emission Mechanism ◽

Grain Sizes ◽

Conventional Furnace ◽

Saturation Polarization ◽

Frenkel Emission ◽

Current Densities ◽

Xrd Patterns

Sr0.4Ba0.6Nb1.85Ta0.15O6 (SBNT) ceramic was used as a target and SBNT thin films were deposited at room temperature. After deposition, the SBN thin films were annealed in conventional furnace (CFA) and in an oxygen atmosphere for 1h by changing the temperature from 700oC to 900oC. The thicknesses of the SBN thin films were calculated by SEM and they were about 450nm independent on the annealing temperature. From the XRD patterns, the as-deposited SBNT thin films displayed amorphous phase, whereas as CFA-treatment was used, the SBNT thin films displayed smooth surfaces. The grain sizes also increased with increasing CFA-treated temperature. In addition, the remanent polarization and saturation polarization increased and coercive field decreased with increasing CFA-treated temperature. Finally, the lnJ-E1/2 curves of the SBNT thin films was developed to find that the linear variations of leakage current densities correspond either to the Schottky emission mechanism or to the Poole-Frenkel emission mechanism.

Download Full-text