Effects of trapping temperature and film thickness in purge and trap with whole column cryotrapping on fused silica columns

1986 ◽  
Vol 9 (1) ◽  
pp. 18-29 ◽  
Author(s):  
J. F. Pankow
Keyword(s):  
Film Thickness ◽  
Fused Silica ◽  
Purge And Trap ◽  
Trapping Temperature

Analysis of PEDOT:PSS Films After Sulfuric Acid Treatment on Silicon and Fused Silica using FT-IR and UV-VIS

MRS Advances ◽  
2016 ◽  
Vol 1 (7) ◽  
pp. 465-469 ◽  
Author(s):  
Emma G. Langford ◽  
Kenneth D. Shaughnessy ◽  
Thomas C. Devore ◽  
David Lawrence ◽  
Costel Constantin
Keyword(s):  
Thin Films ◽  
Sulfuric Acid ◽  
Film Thickness ◽  
Organic Semiconductor ◽  
Acid Treatment ◽  
Fused Silica ◽  
Preliminary Results ◽  
Sulfuric Acid Treatment ◽  
Ft Ir ◽  
Silica Substrates

ABSTRACTThin films of organic semiconductor PEDOT:PSS deposited onto silicon and fused silica substrates. These films were then treated with sulfuric acid (H2SO4) for various amounts of time (i.e., 10, 20, 40, 60, and 80 minutes). Preliminary results obtained with FT-IR, UV-VIS, and Van DerPauw conductivity methods suggest that the H2SO4 removes the PSS isonomer from the PEDOT:PSS system. This PSS removal also induces a decrease in film thickness.

Effects of Substrate Materials on Nanoindentation Tests of AlN Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Shuichi Miyabe ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Penetration Depth ◽  
Ion Beam ◽  
Fused Silica ◽  
Indentation Hardness ◽  
Ion Beam Assisted Deposition ◽  
Film Hardness ◽  
Aln Film ◽  
Different Thickness

ABSTRACTAluminum nitride (AlN) thin films with different thickness were synthesized by ion-beam assisted deposition on various substrates, Corning 7059 glass, fused silica, Si single crystal, and sapphire, which show the hardness ranging from 7 to 37 GPa. Effects of substrate materials on indentation-hardness of AlN films were studied by using a nanoindentation system equipped with a diamond Berkovich indenter. The maximum force applied to the films was kept at 3 mN. For the films on the Corning 7059 glass substrate, when the normalized penetration depth to the film thickness is 0.98, the film hardness is found to be about 7 GPa, which is close to the hardness of the substrate. While the normalized penetration depth is reduced to 0.11, the film hardness becomes to be about 16 GPa. On the other hand, for the films on the sapphire substrate, when the normalized penetration depth is 0.83, the film hardness is observed to be about 25 GPa, while the normalized penetration depth is reduced to 0.10, the film hardness is found to be about 15 GPa. These results reveal that when the normalized penetration depth to the film thickness is about 0.1, the hardness of the AlN film can be evaluated to be about 15 GPa without being affected by substrate materials.

scholarly journals Thermal Conductivity of Cubic and Hexagonal Mesoporous Silica Thin Films

2009 ◽  
Author(s):  
Thomas Coquil ◽  
Neal Hutchinson ◽  
Laurent Pilon ◽  
Erik Richman ◽  
Sarah Tolbert
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Mesoporous Silica ◽  
Film Thickness ◽  
Wall Thickness ◽  
Room Temperature ◽  
Strong Dependence ◽  
Fused Silica ◽  
Silica Thin Films ◽  
The Cross

This paper reports the cross-plane thermal conductivity of highly ordered cubic and hexagonal templated mesoporous amorphous silica thin films synthesized by evaporation-induced self-assembly process. Cubic and hexagonal films featured spherical and cylindrical pores and average porosity of 25% and 45%, respectively. The pore diameter ranged from 3 to 18 nm and film thickness from 80 to 540 nm while the average wall thickness varied from 3 to 12 nm. The thermal conductivity was measured at room temperature using the 3ω method. The experimental setup and the associated analysis were validated by comparing the thermal conductivity measurements with data reported in the literature for the silicon substrate and for high quality thermal oxide thin films with thickness ranging from 100 to 500 nm. The cross-plane thermal conductivity of the synthesized mesoporous silica thin films does not show strong dependence on pore size, wall thickness, or film thickness. This is due to the fact that heat is mainly carried by very localized non propagating vibrational modes. The average thermal conductivity for the cubic mesoporous silica films was 0.30 ± 0.02 W/mK, while it was 0.20 ± 0.01 W/mK for the hexagonal films. This corresponds to a reduction of 79% and 86% from bulk fused silica at room temperature.

Temperature Dependence of Biaxial Modulus and Thermal Expansion Coefficient of Thin Films Using Wafer Curvature Method

2003 ◽  
Vol 795 ◽  
Author(s):  
M. Capanu ◽  
A. Cervin-Lawry ◽  
A. Patel ◽  
I. Koutsaroff ◽  
P. Woo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Expansion ◽  
Film Thickness ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Stress Measurement ◽  
Fused Silica ◽  
Wafer Curvature ◽  
Disk Method

ABSTRACTThe present work uses wafer curvature (disk) method to measure the temperature variation of the biaxial modulus and the thermal expansion coefficient TEC from 25°C to 205°C. The following thin films were measured: PolySi, low stress LPCVD SixNy and (Ba0.7, Sr0.3)TiO3 (BST). To improve the precision, perfect circular thin wafers were used: 4 inches circular 280μm thick <111>Si and 450μm thick Fused Silica. The measurements were performed using a commercial Tencor FLX2320 Stress Measurement System. The film thickness was measured with Tencor TF1 thin film optical system.

Surface Films on Zircaloy-2 Samples Cracked in Neutral Aqueous NaCl by Stress Corrosion

1973 ◽  
Vol 31 ◽  
pp. 46-47
Author(s):  
R.A. Ploc
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Stress Corrosion ◽  
Zirconium Dioxide ◽  
Surface Film ◽  
Surface Films ◽  
Continuous Layer ◽  
Transmission Electron ◽  
Product Film

Samples of low-nickel Zircaloy-2 (material MLI-788-see(1)), when anodically polarized in neutral 5 wt% NaCl solutions, were found to be susceptible to pitting and stress corrosion cracking. The SEM revealed that pitting of stressed samples was occurring below a 2000Å thick surface film which behaved differently from normal zirconium dioxide in that it did not display interference colours. Since the initial film thickness was approximately 65Å, attempts were made to examine the product film by transmission electron microscopy to deduce composition and how the corrosion environment could penetrate the continuous layer.

SEM analysis of DC magnetron sputtered beryllium films

1988 ◽  
Vol 46 ◽  
pp. 960-961
Author(s):  
E. F. Lindsey ◽  
C. W. Price ◽  
E. L. Pierce ◽  
E. J. Hsieh
Keyword(s):  
Fine Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Sem Analysis ◽  
Fused Silica ◽  
Grain Structure ◽  
Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

The method of replication affects metal film granularity and resolution

1989 ◽  
Vol 47 ◽  
pp. 708-709
Author(s):  
George C. Ruben
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Film Thickness ◽  
Single Molecule ◽  
Metal Film ◽  
Vertical Surface ◽  
High Resolution Imaging ◽  
Controllable Factors ◽  
Resolution Imaging

Single molecule resolution in electron beam sensitive, uncoated, noncrystalline materials has been impossible except in thin Pt-C replicas ≤ 150Å) which are resistant to the electron beam destruction. Previously the granularity of metal film replicas limited their resolution to ≥ 20Å. This paper demonstrates that Pt-C film granularity and resolution are a function of the method of replication and other controllable factors. Low angle 20° rotary , 45° unidirectional and vertical 9.7±1 Å Pt-C films deposited on mica under the same conditions were compared in Fig. 1. Vertical replication had a 5A granularity (Fig. 1c), the highest resolution (table), and coated the whole surface. 45° replication had a 9Å granulartiy (Fig. 1b), a slightly poorer resolution (table) and did not coat the whole surface. 20° rotary replication was unsuitable for high resolution imaging with 20-25Å granularity (Fig. 1a) and resolution 2-3 times poorer (table). Resolution is defined here as the greatest distance for which the metal coat on two opposing faces just grow together, that is, two times the apparent film thickness on a single vertical surface.

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