Advances in Colloidal QD Electronic and Optoelectronic Device Technology

Epitaxy of semiconducting β-FeSi2 on Si is of interest for optoelectronic device technology, because of its direct bandgap of ≈0.9 eV. Several techniques, including solid phase epitaxy (SPE) and ion beam synthesis, have been successfully used to grow β-FeSi2 on either Si (001) or (111) wafers. In this paper, we report the epitaxial formation of β-FeSi2 upon thermal annealing of an Fe-Si amorphous layer formed by ion implantation.Si (001) wafers were first implanted at room temperature with 50-keV Fe+ ions to a dose of 0.5 - 1×1016 cm−2, corresponding to a peak Fe concentration of cp ≈ 2 - 4 at.%, and subsequently annealed at 320, 520, and 900°C, in order to induce SPE of the implanted amorphous layer. Cross-sectional high-resolution electron microscopy (HREM) was used for structural characterization.We find that the implanted surface layer ( ≈100 nm thick) remains amorphous for samples annealed at 320°C for as long as 3.2 h, whereas annealing above 520°C results in SPE of Si, along with precipitation of β-FeSi2.

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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The observation of defects on (100) CdTe surfaces by chemical etching

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131759 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1424-1425

Author(s):

M.E. Lee

Keyword(s):

Single Crystal ◽

Grain Boundaries ◽

Single Crystals ◽

Chemical Etching ◽

Crystalline Perfection ◽

Crystalline Defects ◽

High Incidence ◽

Crystallographic Defects ◽

Cdznte Substrates ◽

Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

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Demonstration of a smart pixel using DOES device technology

IEE Proceedings J Optoelectronics ◽

10.1049/ip-j.1992.0037 ◽

1992 ◽

Vol 139 (3) ◽

pp. 208 ◽

Cited By ~ 1

Author(s):

P.A. Kiely ◽

G.W. Taylor ◽

D.P. Docter ◽

P.R. Claisse ◽

T. Vang ◽

...

Keyword(s):

Smart Pixel ◽

Device Technology

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Analisis Forensik Smartphone Android Menggunakan Metode NIST dan Tool MOBILedit Forensic Express

Jurnal Informatika Universitas Pamulang ◽

10.32493/informatika.v5i1.4578 ◽

2020 ◽

Vol 5 (1) ◽

pp. 89

Author(s):

Nasirudin Nasirudin ◽

Sunardi Sunardi ◽

Imam Riadi

Keyword(s):

Mobile Device ◽

Rapid Development ◽

Rapid Progress ◽

Data Backup ◽

Technological Advances ◽

Smartphone Technology ◽

Case Simulation ◽

Device Technology

Technological advances are growing rapidly, including mobile device technology, one of which is an Android smartphone that is experiencing rapid progress with a variety of features so that it can spoil its users, with the rapid development of smartphone technology, many users benefit, but many are disadvantaged by the growing smartphone. technology, so that many perpetrators or persons who commit crimes and seek profits with smartphone facilities. Case simulation by securing Samsung Galaxy A8 brand android smartphone evidence using the MOBILedit forensic express forensic tool with the National Institute of Standards and Technology (NIST) method which consists of four stages of collection, examination, analysis and reporting. The results of testing the Samsung Galaxy A8 android smartphone are carried out with the NIST method and the MOBILedit Forensic Express tool obtained by data backup, extraction and analysis so that there are findings sought for investigation and evidence of crimes committed by persons using android smartphone facilities.

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Decapsulation Techniques for Cu Wire Bonding Package

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0217 ◽

2009 ◽

Author(s):

Dongmei Meng ◽

Joe Rupley ◽

Chris McMahon

Keyword(s):

Laser Ablation ◽

Thin Layer ◽

Chemical Etching ◽

Wire Bonding ◽

Methods And Techniques ◽

Wet Chemical ◽

Wet Chemical Etching ◽

Reliability Issue ◽

Etch Time ◽

Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

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Study on the Residual Current Protection Device Technology

The Open Electrical & Electronic Engineering Journal ◽

10.2174/1874129001408010404 ◽

2014 ◽

Vol 8 (1) ◽

pp. 404-411 ◽

Cited By ~ 1

Author(s):

Guo Rongyan ◽

Zhang Honghui

Keyword(s):

Distribution System ◽

Low Voltage ◽

Residual Current ◽

Electrical Safety ◽

Protective Device ◽

Protection Device ◽

Voltage Distribution ◽

The People ◽

Safety Protection ◽

Device Technology

As an important electrical safety protection device in low voltage distribution system, residual current protection device is to protect the insulation line leakage fault; the electric shock of the people plays an important role in fault. From the protection characteristics of residual current protective device to points, those can be divided into, residual current protection device for residual pulsating direct current and residual dc, according to the residual sinusoidal alternating current.

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