A magnetron sputter deposition chamber for in-situ investigation of multilayer film growth using a state of the art Laboratory Diffractometer

2007 ◽  
Vol 204 (8) ◽  
pp. 2792-2797
Author(s):  
Clemens Ringpfeil ◽  
Dirk Lützenkirchen-Hecht ◽  
Ronald Frahm
Keyword(s):  
Multilayer Film ◽  
Film Growth ◽  
State Of The Art ◽  
Sputter Deposition ◽  
Deposition Chamber ◽  
In Situ Investigation ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Macro-Trench Studies of Surface Reaction Probability of a-Si:H Film Growth

1992 ◽  
Vol 258 ◽  
Author(s):  
A. Nuruddin ◽  
J. R. Doyle ◽  
J. R. Abelson
Keyword(s):  
Hollow Cathode ◽  
Surface Reaction ◽  
Film Growth ◽  
State Of The Art ◽  
Sputter Deposition ◽  
Reactive Magnetron ◽  
High Quality ◽  
Mitigating Factors ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

ABSTRACTUsing a “macro-trench” technique, the surface reaction probabilities β of the a-Si:H growth precursors for remote hollow cathode silane discharge (HC) and reactive magnetron sputter deposition (RMS) are measured. Both deposition methods produce state of the art photo-electronic quality a-Si:H. For the HC case, β= 0.28 ± 0.05, whereas for RMS deposition β ≈ 0.97 ± 0.05. We conclude that β is not universally correlated with film quality, and discuss mitigating factors present in RMS deposition that permit high quality film to be deposited despite the high film precursor reactivity.

Ge2Sb2Te5 Film Deposition and Properties

2007 ◽  
Vol 997 ◽  
Author(s):  
Mengqi Ye ◽  
Rong Tao ◽  
Peijun Ding ◽  
Abner Bello
Keyword(s):  
Thermal Control ◽  
Sputter Deposition ◽  
Film Deposition ◽  
Strong Impact ◽  
Film Properties ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Sputtering Pressure

AbstractMagnetron sputter deposition of Ge2Sb2Te5 film is presented. Good thermal control of the wafer is found critical for maintaining process repeatability. In-situ wafer heating conditions have strong impact on as-deposited Ge2Sb2Te5 film properties such as resistivity, density, stress, composition, and microstructure. The effects of wafer bias and sputtering pressure are also discussed.

Energetic particle fluxes in magnetron sputter deposition of a-Si:H

1991 ◽  
Vol 137-138 ◽  
pp. 783-786 ◽  
Author(s):  
Alan M. Myers ◽  
James R. Doyle ◽  
G. Jeff Feng ◽  
Nagi Maley ◽  
David L. Ruzic ◽  
...  
Keyword(s):  
Energetic Particle ◽  
Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Particle Fluxes
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