Printable and flexible electronic materials have gained a tremendous amount of interest both in academia and in industry, due to their potential impact in many areas, including advanced manufacturing, healthcare, diagnostics, wearables, renewable energy, and defense, to name a few [...]
ABSTRACTInfinite Power Solutions manufactures a flexible rechargeable micro ampere-hour solidstate battery based on thin-film Lithium technology where the battery can be engineered into the product for life as a cost effective solution with “the battery that never needs to be replaced”. The performance characteristics of the battery combined with low power electronic textile applications will require “A Different Way of Thinking About Batteries” relative to battery management and innovative methods of recharging the battery (such as charging the battery whenever the materials are washed and dryed). This paper will review the characteristics of the battery specifically in relation to power generation for flexible electronic materials and the integration issues for a thin-film battery for flexible electronic materials.
Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.
Intrinsically flexible electronic materials for smart device applications