Preface PEGylated protein conjugates: A new class of therapeutics for the 21st century

Author(s):  
Ruth Duncan ◽  
Francesco M. Veronese
2021 ◽  
pp. 112-118
Author(s):  
A.P. Khlynin ◽  

This study analyzed in details the genesis of American school of study of elites in the period from the middle of the 20th century to the beginning of the 21st century. In this case the author makes an attempt to classify the main phases of American elitology from the 40s of the 20th century. Based on an analysis of papers of well-known American sociologists and political scientists who study elites, the author states the main approaches in relation to the study of elites. Thus, in the 1940s, the dominant approach to understanding elites was the liberal-democratic, according to which access to the elites is open for everyone who has extra skills in different spheres of society. At the same time stands a technocratic approach, which define elite as a group of professional managers who form a new class of technocracy. In 50s–60s liberal-democratic approach has been criticized by left-wing approach. From this point, elite was defined as a narrow layer of financiers and persons, who are close to the president, and this layer is closed. In the 60s–70s, the most popular approach of studying elites was pluralism. According to which, elite has no monolithic origin — it is a complex of interconnected independent elites. From the beginning of the 70s, the basic principles of pluralism have been criticized by neoelitism, according to which the most elite representatives included in most elite groups simultaneously. The late 20th — early 21st century can be characterized in two ways: dispute between pluralists and neoelitists and attempts to operationalize the concept of elite.


Author(s):  
Toyin Falola ◽  
Chukwuemeka Agbo

In line with Thomas Hodgkin’s assertion, the search for Africa’s struggle for liberation, equality, self-determination and the dignity of the African is traceable to the result of the centuries of relationship between Africa and Europe dating at least since the 15th century. That association left Africa at the lowest ebb of the racial pyramid which Europeans had formed. As Africans at home and diaspora began to gain Western education, they began to question the racial and discriminatory ideas of whites against black people. They initiated the campaign for African equality with other races drawing inspiration from Africa’s culture and history to argue that Africa had contributed to world development just like any other race. At home in Africa, this new class of elites launched the struggle for the end of colonial domination in the continent. This movement to lift Africa out of the pit of subordination became known as Pan-Africanism. The movement has recorded tremendous successes, an outstanding example being the decolonization of the continent and the improved position of Africans in diaspora. Scholars have done a great deal of work on these movements and successes. Nevertheless, there is urgent need for a critical appraisal of 21st-century Pan-Africanism.


2019 ◽  
Vol 14 (6) ◽  
pp. 457-460 ◽  
Author(s):  
Abhishek Iyer ◽  
Annemieke Madder ◽  
Ishwar Singh

Juncture ◽  
2015 ◽  
Vol 21 (4) ◽  
pp. 298-304 ◽  
Author(s):  
Geoff Evans ◽  
James Tilley
Keyword(s):  

2022 ◽  
Author(s):  
Nghiem Phu Kien Cuong ◽  
Bui Quang Khiem

Over a hundred years after the first socialist revolution broke the global monopoly of capitalism, a new class of socialist-oriented socioeconomic development is coming to the fore. Capitalism is still dominant worldwide, although its hegemony is no longer undisputed, and humankind is now faced with a key existential challenge. This book proposes an alternative path to overcoming the worldwide crisis of globalized capitalism. It offers a novel, balanced, and historically rooted interpretation of the successes and failures of socialist economic construction throughout the last century.


Author(s):  
Frances M. Ross ◽  
Peter C. Searson

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.


Author(s):  
G. C. Ruben ◽  
K. Iqbal ◽  
I. Grundke-Iqbal ◽  
H. Wisniewski ◽  
T. L. Ciardelli ◽  
...  

In neurons, the microtubule associated protein, tau, is found in the axons. Tau stabilizes the microtubules required for neurotransmitter transport to the axonal terminal. Since tau has been found in both Alzheimer neurofibrillary tangles (NFT) and in paired helical filaments (PHF), the study of tau's normal structure had to preceed TEM studies of NFT and PHF. The structure of tau was first studied by ultracentrifugation. This work suggested that it was a rod shaped molecule with an axial ratio of 20:1. More recently, paraciystals of phosphorylated and nonphosphoiylated tau have been reported. Phosphorylated tau was 90-95 nm in length and 3-6 nm in diameter where as nonphosphorylated tau was 69-75 nm in length. A shorter length of 30 nm was reported for undamaged tau indicating that it is an extremely flexible molecule. Tau was also studied in relation to microtubules, and its length was found to be 56.1±14.1 nm.


Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.


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