Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are receiving more attention. The outstanding properties of group III-nitrides offer many more possibilities for the implementation of new functionalities and a variety of technologies are available to realize group III-nitride based MEMS. In this work we demonstrate the application of these techniques for the fabrication of full-nitride MEMS. It includes a novel actuation and sensing principle based on the piezoelectric effect and employing a two-dimensional electron gas confined in AlGaN/GaN heterostructures as integrated back electrode. Furthermore, the actuation of flexural and longitudinal vibration modes in resonator bridges are demonstrated as well as their sensing properties.

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Chlorine-Based Plasma Etching of GaN

MRS Proceedings ◽

10.1557/proc-449-969 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 28

Author(s):

R. J. Shul ◽

R. D. Briggs ◽

S. J. Pearton ◽

C. B. Vartuli ◽

C. R. Abernathy ◽

...

Keyword(s):

Inductively Coupled Plasma ◽

Electron Cyclotron Resonance ◽

Wide Band ◽

Group Iii Nitrides ◽

Wide Band Gap ◽

Light Emitting ◽

Group Iii ◽

Inductively Coupled ◽

Group Iii Nitride

ABSTRACTThe wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 μm/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved etch quality of the group-III nitrides over more conventional reactive ion etch (RIE) systems.

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Hydroxynaphthyridine-Derived Group III Metal Chelates: Wide Band Gap and Deep Blue Analogues of Green Alq3(Tris(8-hydroxyquinolate)aluminum) and Their Versatile Applications for Organic Light-Emitting Diodes

Journal of the American Chemical Society ◽

10.1021/ja807284e ◽

2009 ◽

Vol 131 (2) ◽

pp. 763-777 ◽

Cited By ~ 129

Author(s):

Szu-Hung Liao ◽

Jin-Ruei Shiu ◽

Shun-Wei Liu ◽

Shi-Jay Yeh ◽

Yu-Hung Chen ◽

...

Keyword(s):

Band Gap ◽

Light Emitting Diodes ◽

Wide Band ◽

Metal Chelates ◽

Organic Light Emitting Diodes ◽

Wide Band Gap ◽

Light Emitting ◽

Group Iii ◽

Deep Blue ◽

Organic Light

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Interband optical properties in wide band gap group-III nitride quantum dots

Advances in nano research ◽

10.12989/anr.2015.3.1.013 ◽

2015 ◽

Vol 3 (1) ◽

pp. 13-27 ◽

Cited By ~ 2

Author(s):

K. Jaya Bala ◽

A. John Peter

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Band Gap ◽

Wide Band ◽

Wide Band Gap ◽

Group Iii ◽

Group Iii Nitride

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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