Degree Correlations in Two Layer Growth Model with Nonlinear Preferential Attachment Rule

2017 ◽  
pp. 167-181
Author(s):  
Youjun Lu ◽  
Daoyun Xu ◽  
Jincheng Zhou
Keyword(s):  
Growth Model ◽  
Preferential Attachment ◽  
Layer Growth ◽  
Degree Correlations

scholarly journals Preferential Attachment Scale-Free Growth Model with Random Fitness and Connection with Tsallis Statistics

2006 ◽  
Vol 162 ◽  
pp. 131-137 ◽  
Author(s):  
Marcelo D. S. de Meneses ◽  
Sharon D. da Cunha ◽  
Danyel J. B. Soares ◽  
Luciano R. da Silva
Keyword(s):  
Growth Model ◽  
Preferential Attachment ◽  
Tsallis Statistics ◽  
Scale Free ◽  
Free Growth

scholarly journals Transmission Electron Microscopy and X-ray Diffraction Investigation of the Microstructure of Nanoscale Multilayer TiAlN/VN Grown by Unbalanced Magnetron Deposition

2004 ◽  
Vol 19 (4) ◽  
pp. 1093-1104 ◽  
Author(s):  
Q. Luo ◽  
D.B. Lewis ◽  
P.Eh. Hovsepian ◽  
W-D. Münz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Model ◽  
Growth Front ◽  
Columnar Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Unbalanced Magnetron

Cubic NaCl-B1 structured multilayer TiAlN/VN with a bi-layer thickness of approximately 3 nm and atomic ratios of (Ti+Al)/V = 0.98 to 1.15 and Ti/V = 0.55 to 0.61 were deposited by unbalanced magnetron sputtering at substrate bias voltages between -75 and -150 V. In this paper, detailed transmission electron microscopy and x-ray diffraction revealed pronounced microstructure changes depending on the bias. At the bias -75 V, TiAlN/VN followed a layer growth model led by a strong (110) texture to form a T-type structure in the Thornton structure model of thin films, which resulted in a rough growth front, dense columnar structure with inter-column voids, and low compressive stress of -3.8 GPa. At higher biases, the coatings showed a typical Type-II structure following the strain energy growth model, characterized by the columnar structure, void-free column boundaries, smooth surface, a predominant (111) texture, and high residual stresses between -8 and -11.5 GPa.

SCALE-FREE EVOLVING NETWORKS WITH ACCELERATED ATTACHMENT

2007 ◽  
Vol 10 (02) ◽  
pp. 143-154 ◽  
Author(s):  
SEN QIN ◽  
GUANZHONG DAI ◽  
LIN WANG ◽  
MING FAN
Keyword(s):  
Growth Model ◽  
Preferential Attachment ◽  
Time Step ◽  
Scale Free ◽  
Evolving Networks ◽  
Power Law Decay ◽  
Free Network ◽  
Accelerated Growth ◽  
Attachment Mechanism ◽  
Aging Network

A new evolving network based on the scale-free network of Barabási and Albert (BA) is studied, and the accelerated attachment of new edges is considered in its evolving process. The accelerated attachment is different from the previous accelerated growth of edges and has two particular meanings in this paper. One is that a new vertex with the edges is inserted into the network with acceleration at each time step; the other is that, with a given probability, some additional edges are linked with the vertices in proportion to the number of their obtained edges in the latest evolving periods. The new model describes the cases of those complex networks with a few exceptional vertices. The attachment mechanism of the new adding edges for these vertices does not follow the preferential attachment rule. Comparing with the linear edge growth model, the characteristics of the accelerated growth model are studied theoretically and numerically. We show that the degree distributions of these models have a power law decay and the exponents are larger than that of the BA model. We point out that the characteristics of the exceptional vertices and the aging vertices in an aging network are not identical. The reasons for neglecting this attachment in most of evolving networks are also summarized.

GROWING HIERARCHICAL SCALE-FREE NETWORKS BY MEANS OF NONHIERARCHICAL PROCESSES

2007 ◽  
Vol 17 (07) ◽  
pp. 2447-2452 ◽  
Author(s):  
S. BOCCALETTI ◽  
D.-U. HWANG ◽  
V. LATORA
Keyword(s):  
Power Law ◽  
Degree Distribution ◽  
Preferential Attachment ◽  
Rate Equations ◽  
Scale Free ◽  
Scale Free Networks ◽  
Degree Correlations ◽  
Law Degree ◽  
Hierarchical Scale

We introduce a fully nonhierarchical network growing mechanism, that furthermore does not impose explicit preferential attachment rules. The growing procedure produces a graph featuring power-law degree and clustering distributions, and manifesting slightly disassortative degree-degree correlations. The rigorous rate equations for the evolution of the degree distribution and for the conditional degree-degree probability are derived.

The Calculation of Kinetic Parameters in Manganese Nitriding

2010 ◽  
Vol 97-101 ◽  
pp. 737-742 ◽  
Author(s):  
Jin Zhu Zhang ◽  
Shui Hui Luo ◽  
Chu Shao Xu
Keyword(s):  
Weight Gain ◽  
Numerical Model ◽  
Kinetic Parameters ◽  
Growth Model ◽  
Metallic Iron ◽  
Nitride Layer ◽  
Layer Growth ◽  
Solid Metal ◽  
Nitriding Temperature ◽  
Set Up

The present work confirmed and achieved the relevant parameters which belong to the manganese nitriding model via experiments. Based on the metallic iron nitriding model and the nitride layer growth model, metal manganese nitrding model was set up. The change laws between the kinetic parameters and temperature of the solid metal manganese nitriding model was studied by using the optimum method. The experimental results showed that the ratio of weight gain for samples relatively increased with the increasing of nitriding temperature, and the results obtained from the numerical model indicated that the kinetic parameters of manganese nitriding model increased with the increasing of nitriding temperature.

Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

1990 ◽  
Vol 48 (2) ◽  
pp. 400-401
Author(s):  
L. -M. Peng ◽  
M. J. Whelan
Keyword(s):  
Quantum Wells ◽  
Growth Model ◽  
Practical Method ◽  
High Energy ◽  
Dynamical Theory ◽  
Layer Growth ◽  
Semiconductor Films ◽  
Mbe Growth ◽  
Surface Steps ◽  
Artificial Surface

Reflection high energy electron diffraction (RHEED) has become well established as one of the most powerful and versatile techniques for growth and surface studies of semiconductor films prepared by molecular beam epitaxy (MBE). In particular the technique of RHEED intensity oscillations has been used routinely to calibrate beam fluxes and alloys composition and to control the thicknesses of quantum wells and superlattice layers.Although several interpretations have been proposed for the strong oscillations in RHEED intensity during MBE growth, full dynamical calculations have been done only for an artificial surface consisting of a periodic array of surface steps. The enormous amount of computation involved prevents the dynamical theory being applied to a more realistic epitaxically growing system. In this paper we report a simple and practical method for calculating dynamical RHEED from MBE growing surfaces.We first consider epitaxial growth on a low-index surface. The growth is simulated by using a perfect layer growth model and a diffusive growth model.

scholarly journals Preferential attachment growth model and nonextensive statistical mechanics

2005 ◽  
Vol 70 (1) ◽  
pp. 70-76 ◽  
Author(s):  
D. J. B Soares ◽  
C Tsallis ◽  
A. M Mariz ◽  
L. R. da Silva
Keyword(s):  
Statistical Mechanics ◽  
Growth Model ◽  
Preferential Attachment ◽  
Nonextensive Statistical Mechanics

ZNSE/III–V Heterostructures Grown in a Multichamber MBE System

1987 ◽  
Vol 102 ◽  
Author(s):  
M. C. Tamargo ◽  
J. L. de Miguel ◽  
D. M. Hwang ◽  
B. J. Skromme ◽  
M. H. Meynadier ◽  
...  
Keyword(s):  
Growth Model ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Layer By Layer ◽  
Bulk Gaas ◽  
Group Iii ◽  
3 Dimensional ◽  
Gaas Substrates

ABSTRACTWe have grown ZnSe epitaxial layers on bulk GaAs substrates and on GaAs epitaxial layers, with both As-rich and Ga-rich surface terminations. We have also grown ZnSe on AlAs epitaxial surfaces with different As to Al ratios. In all cases, abrupt, layer-by-layer growth is observed on the As-rich surfaces, while 3-dimensional nucleation is observed on the group III-rich surfaces. GaAs was also grown on ZnSe layers. In this case, microtwins form at the interface whose density diminishes as the layer is made thicker. A growth model is proposed consistent with these results which requires over-all electronic balance at the interface.

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