Influence of Layer Thickness, Infill Rate and Orientation on Thermal and Structural Loading of FDM Parts

2020 ◽  
pp. 263-282
Author(s):  
Andrei-Danut Mazurchevici ◽  
Ramona-Iuliana Popa ◽  
Constantin Carausu ◽  
Simona-Nicoleta Mazurchevici ◽  
Dumitru Nedelcu
Keyword(s):  
Layer Thickness ◽  
Structural Loading

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

The stabilization of B.C.C. Cu in Cu/Nb nanolayered composites

1996 ◽  
Vol 54 ◽  
pp. 228-229
Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Layer Thickness ◽  
Volume Fraction ◽  
Ion Beam ◽  
High Strength ◽  
Cross Sectional ◽  
Metastable Structure ◽  
High Resolution Tem ◽  
Potential Improvement ◽  
Two Phases

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.

On the Effect of 2-Layer Thickness by High-Specific Gravity Armor Blocks on Wave Reflection

1999 ◽  
Author(s):  
Masahiro Ito ◽  
Yuitch Iwagaki ◽  
Hiroshi Murakami ◽  
Kenji Nemoto ◽  
Masato Yamamoto ◽  
...  
Keyword(s):  
Specific Gravity ◽  
Layer Thickness ◽  
Wave Reflection ◽  
High Specific Gravity

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

Making Graphene-type Material via Polymerization of Porphyrin

2020 ◽  
Author(s):  
SANJIB KAR ◽  
Sruti Mondal ◽  
Kasturi Sahu ◽  
Dilruba Hasina ◽  
Tapobrata Som ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Polymeric Material ◽  
Single Layer ◽  
Type Material ◽  
Synthetic Pathway ◽  
Simple Chemical ◽  
Doped Graphene ◽  
Ring Nitrogen ◽  
2D Structure ◽  
Porphyrin Macrocycles

<p>The synthesis of new graphene-type materials (<i>via</i> polymerization of porphyrin macrocycles) through a simple chemical synthetic pathway (at RT) has been demonstrated. This newly synthesized material can be dispersed in water with an average sheet size of few microns and with single layer thickness. As the porphyrin contains four inner ring nitrogen atoms thus the presented polymeric material will be close analogous of N-doped graphene. Porphyrin as the key component to synthesize layered graphene type continuous 2D structure has never been attempted before. </p> <p> </p>

TEMPERATURE VARIABILITY AT SENUNU BAY, WEST SUMBAWA

2013 ◽  
Vol 5 (2) ◽  
Author(s):  
Syamsul Hidayat ◽  
Mulia Purba ◽  
Jorina Waworuntu
Keyword(s):  
Layer Thickness ◽  
Mixed Layer ◽  
Cross Correlation ◽  
Sea Surface ◽  
Thermocline Depth ◽  
Kelvin Wave ◽  
The West ◽  
Sea Bottom ◽  
Annual Period ◽  
Regional Processes

The purposes of this study were to determine the variability of temperature and its relation to regional processes in the Senunu Bay. The result showed clear vertical stratifications i.e., mixed layer thickness about 39-119 m with isotherm of 27°C, thermocline layer thickness about 83-204 m with isotherm of 14–26°C, and  the deeper layer from the thermocline lower limit to the sea bottom with isotherm <13°C. Temperature and the thickness of each layers varied with season in which during the Northwest Monsoon the temperature was warmer and the mixed layer was thicker than those during Southeast Monsoon. During Southeast Monsoon, the thermocline layer rose  about 24 m. The 2001, 2006, and 2009 (weak La Nina years),  the Indonesia Throughflow (ITF) carried warmer water, deepening thermocline depth and reducing upwelling strength.  In 2003 and 2008 thickening of mixed layer occurred in transition season  was believed  associated with the  arrival of Kelvin Wave from the west. In 2002 and 2004 (weak El Nino period,) ITF carries colder water shallowing thermocline depth and enhancing upwelling strength. In 2007 was believed to be related with positive IODM where the sea surface temperature were decreasing due to intensification of southeast wind which induced strong upwelling. The temperature spectral density of mixed layer and thermocline was influenced by annual, semi-annual, intra-annual and inter-annual period fluctuations. The cross-correlation between wind and temperature showed significant value in the annual period.  Keywords: temperature, thermocline, variability, ENSO, IODM.

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