Making Graphene-type Material via Polymerization of Porphyrin

Author(s):  
SANJIB KAR ◽  
Sruti Mondal ◽  
Kasturi Sahu ◽  
Dilruba Hasina ◽  
Tapobrata Som ◽  
...  

<p>The synthesis of new graphene-type materials (<i>via</i> polymerization of porphyrin macrocycles) through a simple chemical synthetic pathway (at RT) has been demonstrated. This newly synthesized material can be dispersed in water with an average sheet size of few microns and with single layer thickness. As the porphyrin contains four inner ring nitrogen atoms thus the presented polymeric material will be close analogous of N-doped graphene. Porphyrin as the key component to synthesize layered graphene type continuous 2D structure has never been attempted before. </p> <p> </p>

2020 ◽  
Author(s):  
SANJIB KAR ◽  
Sruti Mondal ◽  
Kasturi Sahu ◽  
Dilruba Hasina ◽  
Tapobrata Som ◽  
...  

<p>The synthesis of new graphene-type materials (<i>via</i> polymerization of porphyrin macrocycles) through a simple chemical synthetic pathway (at RT) has been demonstrated. This newly synthesized material can be dispersed in water with an average sheet size of few microns and with single layer thickness. As the porphyrin contains four inner ring nitrogen atoms thus the presented polymeric material will be close analogous of N-doped graphene. Porphyrin as the key component to synthesize layered graphene type continuous 2D structure has never been attempted before. </p> <p> </p>


2019 ◽  
Vol 21 (37) ◽  
pp. 20981-20987
Author(s):  
Jie Zhang ◽  
Huijun Liu ◽  
Yun Gao ◽  
Xiaohong Xia ◽  
Zhongbing Huang

We identify a semiconducting 2D electronic material, single-layer AsB, which has a suitable direct bandgap of 1.18 eV. Its frontiers state is sp2 orbital hybridization, which can be effectively tuned by layer thickness, stacking order and strain.


2012 ◽  
Vol 1451 ◽  
pp. 45-49
Author(s):  
Dennis L. Pleskot ◽  
Jennifer R. Kyle ◽  
Maziar Ghazinejad ◽  
Shirui Guo ◽  
Isaac Ruiz ◽  
...  

ABSTRACTFluorescence Quenching Microscopy has been shown to be an effective means of characterizing graphene on the macroscale. Centimeter-scale CVD-grown pristine and doped graphene were manufactured in a high temperature (1000°C) furnace on pristine copper substrates. The copper was then etched away in a FeCl3solution and the graphene was coated with DCM-based fluorescent dye before being imaged in a fluorescence microscope. The fluorescence image was then image-processed using modified Matlab software. The resulting image showed clear contrast between the pristine graphene sheet and defects on the graphene surface, which revealed that fluorescence microscopy could determine the quality of a large region of graphene. Also, significant contrast was identified between single-layer and multi-layer regions, showing that this technique is also effective at determining the degree of uniformity within a graphene sample. Lastly, the fluorescence images showed contrast between doped and undoped regions of graphene.


2014 ◽  
Vol 962-965 ◽  
pp. 213-216
Author(s):  
Guo Ping Jiang

In this paper, four general directions are described to make evaluations and their resource potential; those are coal structure and coal level, gas content of deep coalbed, the coalbed thickness and distribution and the buried depth of coalbed. Coalfields of the study area are mainly Permian and Carboniferous coal seam of Shanxi Formation coal and Benxi group 11 # coal, coal seam depth 1370-1812m. No. 3 coal-seam average layer thickness of 1.6 m, the monolayer most 2 m thick; No. 11 coal-seam in the average layer thickness of 3 m, single-layer thickness of 4.5 m. Predict the amount of coal resources of 17.3 one hundred million t. Predict coal-bed methane resources of 27.68 billion cubic reserve abundance of 104 million square / km2 in. The exploration results show that this region has good development prospects.


Author(s):  
Manohar S. Konchady ◽  
Sergey Yarmolenko ◽  
Devdas M. Pai ◽  
Jag Sankar

Multilayer and superlattice coatings of TiN/CrN coating are deposited on Si(100) substrate at different modulation wavelength by reactive unbalanced magnetron sputtering and characterized using X-ray diffraction, nanoindentation, AFM. Nano-roughness of films is in good correlation with hardness and modulus and this effect has been used for optimization of deposition parameters. Preliminary results have shown slightly better mechanical properties for multilayered TiN/CrN coatings compared to single layer TiN and CrN coatings. The XRD results have shown a preferred orientation in &lt;100&gt; direction for TiN/CrN multilayer coatings at modulation wavelengths below 80 nm. At 100 nm layer thickness, TiN revealed small amount of crystals with &lt;111&gt; orientation and their content significantly increases with increase in layer thickness while CrN layers only show preferred orientation of &lt;100&gt;. Multilayered coatings exhibit better mechanical properties due to presence of large number of interfaces which act as barrier to dislocations. Fracture toughness and tribological properties of these coatings are also expected to show significant improvement and the investigation in this area is under progress.


2013 ◽  
Vol 537 ◽  
pp. 97-100
Author(s):  
Ren Xi Hu ◽  
Xiao Ge Chen ◽  
Gang Li

In this paper, influence of single-layer thickness on residual stresses in Sm2Zr2O7/YSZ thermal barrier coating was analyzed by finite element method. Results show that the radial stress remains stable in x range 0-12mm, and it decreases abruptly at edge of the sample. The distribution of axial stress resembles that of radial stress, the shear stress increase abruptly at edge of sample. In three typical residual stresses, radial stress has the highest value, axial stress and shear stress can be ignored. The best thickness combination of Sm2Zr2O7/YSZ TBCs should be 0.1mm-NiCoCrAlY layer, 0.05-0.1mm -TGO, 0.1mm-YSZ and 0.9mm-Sm2Zr2O7


2021 ◽  
Vol 17 ◽  
Author(s):  
A.K.M. Shafiqul Islam ◽  
Rabia Tasaduq Hussain ◽  
Melati Khairuddean ◽  
Faiz Bukhari Mohd Suah ◽  
Naser M. Ahmed

Abstract: Graphene is an allotropic form of carbon with a single-layer 2D structure. Graphene’s unique physical and electrochemical properties, such as its large surface area, high conductivity, robust mechanical strength, remarkable thermal conductivity, exceptional biocompatibility, and suitability for functionalization, make it a new research frontier for carbon-based nanomaterials. In this review, we summarize the different aspects of graphene, that is, its synthesis via two approaches, namely, top-down and bottom-up approaches, and discuss its new derivatives.


2011 ◽  
Vol 189-193 ◽  
pp. 3668-3671 ◽  
Author(s):  
Qing Song Wei ◽  
Xiao Zhao ◽  
Li Wang ◽  
Rui Di Li ◽  
Jie Liu ◽  
...  

Selective Laser Melting (SLM) can produce high-performance metal parts with complex structures. However, it’s difficult to control the processing parameters, because many factors involves. From the perspective of the molten pool, the study focuses on the effects of processing parameters, including scanning speed, laser power, scanning space, layer thickness, and scanning strategies, on the surface quality, the balling effect, the density of SLM parts, by conducting experiments of single track, single layer and block forming. The results show that the quality of the molten pool is affected by laser power and scanning speed. Scanning drove in the strategy of “jumping and turning”,a smooth surface and a less balling effect will be obtained. The thicker the powder layer is, the lower density will be obtained. The optimal parameters from series of experiments are: laser power of 98W; scanning speed of 90mm/s; scanning space of 0.07mm; layer thickness of 0.1mm; and scanning strategy of “jumping and turning”.


2015 ◽  
Vol 3 (24) ◽  
pp. 6172-6177 ◽  
Author(s):  
Bing He ◽  
Zhongjie Ren ◽  
Chenze Qi ◽  
Shouke Yan ◽  
Zhaohui Wang

A one-step approach is developed to synthesise a nitrogen-doped graphene (NG) membrane, which is derived from poly 4-vinyl pyridine (P4VP). High quality single layer N-doped graphene membrane with N content of 6.37% has been synthesized at 800 °C. Consequently, the electron mobility of the n-type FETs based on NG reaches as high as 365 cm2 V−1 s−1, much higher than those of NGs previously reported.


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