Relationship between dielectric strength and the multifractal nature of charge distribution on the surface of an electrode

1993 ◽  
Vol 36 (11) ◽  
pp. 1096-1098 ◽  
Author(s):  
M. D. Noskov ◽  
V. R. Kukhta ◽  
V. V. Lopatin
Author(s):  
J. Taft∅

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.


2003 ◽  
Vol 9 (4) ◽  
pp. 67-72 ◽  
Author(s):  
Yu.O. Klymenko ◽  
◽  
О.К. Cheremnykh ◽  

2020 ◽  
Vol 140 (10) ◽  
pp. 504-505
Author(s):  
Kaisei Enoki ◽  
Ushio Chiba ◽  
Hiroaki Miyake ◽  
Yasuhiro Tanaka

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.


2020 ◽  
Vol 38 (3B) ◽  
pp. 104-114
Author(s):  
Samah M. Hussein

This research has been done by reinforcing the matrix (unsaturated polyester) resin with natural material (date palm fiber (DPF)). The fibers were exposure to alkali treatment before reinforcement. The samples have been prepared by using hand lay-up technique with fiber volume fraction of (10%, 20% and 30%). After preparation of the mechanical and physical properties have been studied such as, compression, flexural, impact strength, thermal conductivity, Dielectric constant and dielectric strength. The polyester composite reinforced with date palm fiber at volume fraction (10% and 20%) has good mechanical properties rather than pure unsaturated polyester material, while the composite reinforced with 30% Vf present poor mechanical properties. Thermal conductivity results indicated insulator composite behavior. The effect of present fiber polar group induces of decreasing in dielectric strength, and increasing dielectric constant. The reinforcement composite 20% Vf showed the best results in mechanical, thermal and electrical properties.


2012 ◽  
Vol 15 (2-3) ◽  
pp. 157-168 ◽  
Author(s):  
Mireille Bechara ◽  
Rabih Khazaka ◽  
Sombel Diaham ◽  
Marie-Laure Locatelli ◽  
Pierre Bidan

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