Control of substrate temperature during diamond deposition

1995 ◽  
Vol 16 (S1) ◽  
pp. S157-S168 ◽  
Author(s):  
M. T. Bieberich ◽  
S. L. Girshick
Keyword(s):  
Substrate Temperature ◽  
Diamond Deposition

Observations on the growth of barium bismuth oxide thin films

1992 ◽  
Vol 50 (1) ◽  
pp. 76-77
Author(s):  
M G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Substrate Temperature ◽  
Deposition Process ◽  
Nucleation Layer ◽  
Second Stage ◽  
Device Applications ◽  
High Transition ◽  
Substrate Temperatures ◽  
Oriented Material ◽  
Barium Bismuth ◽  
Superconductor Device

The bismuthates (for example, Ba1-xKxBiO3) represent a class of high transition temperature superconductors. The lack of anisotropy and the long coherence length of the bismuthates makes them technologically interesting for superconductor device applications. To obtain (100) oriented Ba1-xKxBiO3 films on (100) oriented MgO, a two-stage deposition process is utilized. In the first stage the films are nucleated at higher substrate temperatures, without the potassium. This process appears to facilitate the formation of the perovskite (100) orientation on (100) MgO. This nucleation layer is typically between 10 and 50 nm thick. In the second stage, the substrate temperature is reduced and the Ba1-xKxBiO3 is grown. Continued growth of (100) oriented material is possible at the lower substrate temperature.

Ground State and Excited State H-Atom Temperatures in a Microwave Plasma Diamond Deposition Reactor

1996 ◽  
Vol 6 (9) ◽  
pp. 1167-1180 ◽  
Author(s):  
A. Gicquel ◽  
M. Chenevier ◽  
Y. Breton ◽  
M. Petiau ◽  
J. P. Booth ◽  
...  
Keyword(s):  
Excited State ◽  
Ground State ◽  
Microwave Plasma ◽  
Diamond Deposition

THE EFFECT OF SUBSTRATE TEMPERATURE ON THE BEHAVIOUR OF GOLD AND SILVER ON THE 100 TUNGSTEN PLANE

1984 ◽  
Vol 45 (C9) ◽  
pp. C9-59-C9-64 ◽  
Author(s):  
D. S. Joag ◽  
J. P. Jones
Keyword(s):  
Substrate Temperature

Characterization of Microcrystalline Transition from Amorphous Silicon as a Function of Hydrogen Dilution and Substrate Temperature of Hot-wire CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
Keda Wang ◽  
Haoyue Zhang ◽  
Jian Zhang ◽  
Jessica M. Owens ◽  
Jennifer Weinberg-Wolf ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Sudden Change ◽  
Chemical Vapor ◽  
Threshold Value ◽  
Ir Absorption ◽  
Sudden Increase ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Integral Absorption ◽  
Two Peaks

Abstracta-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of Ts=250°C with varied hydrogen-dilution ratio, 0<R<10; the other group was deposited with fixed R=3 but a varied Ts from 150 to 550°C. IR, Raman and PL spectra were studied. The Raman results indicate that there is a threshold value for the microstructure transition from a- to μc-Si. The threshold is found to be R ≈ 2 at Ts = 250°C and Ts ≈ 200°C at R=3. The IR absorption of Si-H at 640 cm-1 was used to calculate the hydrogen content, CH. CH decreased monotonically when either R or Ts increased. The Si-H stretching mode contains two peaks at 2000 and 2090 cm-1. The ratio of the integral absorption peaks I2090/(I2090+I2090) showed a sudden increase at the threshold of microcrystallinity. At the same threshold, the PL features also indicate a sudden change from a- to μc-Si., i.e. the low energy PL band becomes dominant and the PL total intensity decreases. We attribute the above IR and PL changes to the contribution of microcrystallinity, especially the c-Si gain-boundaries.

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Hydrogen embrittlement of titanium during microwave plasma assisted CVD diamond deposition

2000 ◽  
Vol 16 (4) ◽  
pp. 355-360 ◽  
Author(s):  
Y. Fu ◽  
B. Yan ◽  
N.L. Loh ◽  
C.Q. Sun ◽  
P. Hing
Keyword(s):  
Hydrogen Embrittlement ◽  
Microwave Plasma ◽  
Cvd Diamond ◽  
Diamond Deposition

Influence of substrate temperature on the morphology and structure of bismuth thin films deposited by magnetron sputtering

Vacuum ◽  
2019 ◽  
Vol 166 ◽  
pp. 316-322 ◽  
Author(s):  
Xiufang Qin ◽  
Caiyun Sui ◽  
Lanxin Di
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Morphology And Structure ◽  
Influence Of Substrate

Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source

2009 ◽  
Vol 311 (10) ◽  
pp. 2992-2995 ◽  
Author(s):  
Shigeya Naritsuka ◽  
Midori Mori ◽  
Yoshitaka Takeuchi ◽  
Takahiro Maruyama
Keyword(s):  
Substrate Temperature ◽  
Influence Of Substrate

Effect of substrate temperature on pulsed laser ablated Zn0.95Co0.05O diluted magnetic semiconducting thin films

2007 ◽  
Vol 101 (7) ◽  
pp. 073902 ◽  
Author(s):  
Q. Liu ◽  
C. L. Yuan ◽  
C. L. Gan ◽  
G. C. Han
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser ◽  
Diluted Magnetic ◽  
Semiconducting Thin Films

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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