THE EFFECT OF SUBSTRATE TEMPERATURE ON THE BEHAVIOUR OF GOLD AND SILVER ON THE 100 TUNGSTEN PLANE

1984 ◽  
Vol 45 (C9) ◽  
pp. C9-59-C9-64 ◽  
Author(s):  
D. S. Joag ◽  
J. P. Jones
Keyword(s):  
Substrate Temperature

Observations on the growth of barium bismuth oxide thin films

1992 ◽  
Vol 50 (1) ◽  
pp. 76-77
Author(s):  
M G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Substrate Temperature ◽  
Deposition Process ◽  
Nucleation Layer ◽  
Second Stage ◽  
Device Applications ◽  
High Transition ◽  
Substrate Temperatures ◽  
Oriented Material ◽  
Barium Bismuth ◽  
Superconductor Device

The bismuthates (for example, Ba1-xKxBiO3) represent a class of high transition temperature superconductors. The lack of anisotropy and the long coherence length of the bismuthates makes them technologically interesting for superconductor device applications. To obtain (100) oriented Ba1-xKxBiO3 films on (100) oriented MgO, a two-stage deposition process is utilized. In the first stage the films are nucleated at higher substrate temperatures, without the potassium. This process appears to facilitate the formation of the perovskite (100) orientation on (100) MgO. This nucleation layer is typically between 10 and 50 nm thick. In the second stage, the substrate temperature is reduced and the Ba1-xKxBiO3 is grown. Continued growth of (100) oriented material is possible at the lower substrate temperature.

Characterization of Microcrystalline Transition from Amorphous Silicon as a Function of Hydrogen Dilution and Substrate Temperature of Hot-wire CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
Keda Wang ◽  
Haoyue Zhang ◽  
Jian Zhang ◽  
Jessica M. Owens ◽  
Jennifer Weinberg-Wolf ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Sudden Change ◽  
Chemical Vapor ◽  
Threshold Value ◽  
Ir Absorption ◽  
Sudden Increase ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Integral Absorption ◽  
Two Peaks

Abstracta-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of Ts=250°C with varied hydrogen-dilution ratio, 0<R<10; the other group was deposited with fixed R=3 but a varied Ts from 150 to 550°C. IR, Raman and PL spectra were studied. The Raman results indicate that there is a threshold value for the microstructure transition from a- to μc-Si. The threshold is found to be R ≈ 2 at Ts = 250°C and Ts ≈ 200°C at R=3. The IR absorption of Si-H at 640 cm-1 was used to calculate the hydrogen content, CH. CH decreased monotonically when either R or Ts increased. The Si-H stretching mode contains two peaks at 2000 and 2090 cm-1. The ratio of the integral absorption peaks I2090/(I2090+I2090) showed a sudden increase at the threshold of microcrystallinity. At the same threshold, the PL features also indicate a sudden change from a- to μc-Si., i.e. the low energy PL band becomes dominant and the PL total intensity decreases. We attribute the above IR and PL changes to the contribution of microcrystallinity, especially the c-Si gain-boundaries.

Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source

2009 ◽  
Vol 311 (10) ◽  
pp. 2992-2995 ◽  
Author(s):  
Shigeya Naritsuka ◽  
Midori Mori ◽  
Yoshitaka Takeuchi ◽  
Takahiro Maruyama
Keyword(s):  
Substrate Temperature ◽  
Influence Of Substrate

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

scholarly journals Ice Coverage Induced by Depositing a Water Drop onto the Supercooled Substrate at Extreme Low Vapor Pressure

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 691
Author(s):  
Yugang Zhao ◽  
Zichao Zuo ◽  
Haibo Tang ◽  
Xin Zhang
Keyword(s):  
Vapor Pressure ◽  
Substrate Temperature ◽  
Water Drop ◽  
Industrial Processes ◽  
Aircraft Icing ◽  
Ice Coverage ◽  
Fundamental Understanding ◽  
Order Of Magnitude ◽  
The Impact ◽  
Kinetics Of

Icing/snowing/frosting is ubiquitous in nature and industrial processes, and the accretion of ice mostly leads to catastrophic consequences. The existing understanding of icing is still limited, particularly for aircraft icing, where direct observation of the freezing dynamics is inaccessible. In this work, we investigate experimentally the impact and freezing of a water drop onto the supercooled substrate at extremely low vapor pressure, to mimic an aircraft passing through clouds at a relatively high altitude, engendering icing upon collisions with pendant drops. Special attention is focused on the ice coverage induced by an impinging drop, from the perimeter pointing outward along the radial direction. We observed two freezing regimes: (I) spread-recoil-freeze at the substrate temperature of Ts = −15.4 ± 0.2 °C and (II) spread (incomplete)-freeze at the substrate temperature of Ts = −22.1 ± 0.2 °C. The ice coverage is approximately one order of magnitude larger than the frozen drop itself, and counterintuitively, larger supercooling yields smaller ice coverage in the range of interest. We attribute the variation of ice coverage to the kinetics of vapor diffusion in the two regimes. This fundamental understanding benefits the design of new anti-icing technologies for aircraft.

scholarly journals Photo-selective shade nets on the production and quality of sugarcane plantlets

2019 ◽  
Vol 23 (5) ◽  
pp. 366-371 ◽  
Author(s):  
José J. F. Cordeiro Júnior ◽  
Héliton Pandorfi ◽  
José A. D. Barbosa Filho ◽  
Alex S. Moraes ◽  
Luiz A. de Almeida Neto ◽  
...  
Keyword(s):  
Solar Radiation ◽  
Substrate Temperature ◽  
Principal Component ◽  
Global Solar Radiation ◽  
Saccharum Officinarum ◽  
Low Density Polyethylene ◽  
Low Density ◽  
Randomized Design ◽  
Completely Randomized Design

ABSTRACT Brazil is the world’s largest producer of sugarcane (Saccharum officinarum L.) and research aimed at propagation has promoted higher quality in production. The objective of this study was to investigate the effect of the variation of micrometeorological elements on the survival and quality of pre-sprouted sugarcane plantlets. The study was carried out in a protected environment (UFRPE). Plantlets of the cultivar RB92579 were obtained by the technique of production of pre-sprouted plantlets. The protected environments were divided into four modules covered with low-density polyethylene plastic + photo-selective shade nets and one module without shade net. Micrometeorological data of global and photosynthetically active solar radiation, air temperature, substrate temperature, relative humidity and the solar radiation spectrum were recorded in each module. The experiment was conducted in a completely randomized design and the principal component analysis was used to verify the association between the cultivation modules, micrometeorological variables and crop variables. Anti-UV low-density polyethylene plastic + freshnet led to lower transmittance of global solar radiation, higher percentage of photosynthetically active radiation and lower plantlet mortality. Substrate temperature above 30.2 °C resulted in higher plantlet mortality. Larger spectrum in the red range led to the production of better quality plantlet. The use of freshnet shade net promoted adequate conditions for the cultivation of sugarcane plantlets and allows obtaining better quality plantlets.

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