In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication

1994 ◽  
Vol 23 (7) ◽  
pp. 625-634 ◽  
Author(s):  
M. Hong ◽  
K. D. Choquette ◽  
J. P. Mannaerts ◽  
L. H. Grober ◽  
R. S. Freund ◽  
...  
Keyword(s):  
Materials Science ◽  
Compound Semiconductor ◽  
Device Fabrication ◽  
Semiconductor Materials

In situ TEM of silicon oxidation

1992 ◽  
Vol 50 (1) ◽  
pp. 324-325
Author(s):  
J. Murray Gibson ◽  
F.M. Ross ◽  
R.D. Twesten
Keyword(s):  
Materials Science ◽  
Oxidation Process ◽  
Electronic Device ◽  
Model System ◽  
Device Fabrication ◽  
In Situ Tem ◽  
Important Process ◽  
Silicon Oxidation ◽  
Electronic Device Fabrication

Oxidation is an important process in materials science. Silicon oxidation is particularly relevant for electronic device fabrication, but it also provides a model system. We report here the use of in-situ TEM for the examination of the microstructural details of the oxidation process.

Preparation of Planar and Cross-Sectional Thin Specimens by Chemical Dimpling with Optically Controlled Terminator

1990 ◽  
Vol 199 ◽  
Author(s):  
D. M. Hwang ◽  
L. Nazar ◽  
C. Y. Chen
Keyword(s):  
High Resolution ◽  
Compound Semiconductor ◽  
Chemical Polishing ◽  
Semiconductor Materials ◽  
Ion Milling ◽  
Lattice Imaging ◽  
Cross Sectional

ABSTRACTWe have modified a conventional dimpling machine to perform chemical polishing with a reactive etchant. The modified dimpler also detects specimen perforation in situ optically, and automatically stops the dimpling process by lifting the dimpler wheel and flooding the specimen with a rinse solution. Using this apparatus, we are able to prepare both planar and cross-sectional thin specimens of compound semiconductor materials without using expensive and time-consuming ion-milling. The specimens have large thin areas, are free of artifacts, and are suitable for high-resolution lattice imaging.

Cathodoluminescence of Catalyst Crystallites

1982 ◽  
Vol 40 ◽  
pp. 664-665
Author(s):  
E.D. Boyes ◽  
P.L. Gai ◽  
D.B. Darby ◽  
C. Warwick
Keyword(s):  
Defect Density ◽  
Chemical Properties ◽  
Operating Conditions ◽  
Semiconductor Materials ◽  
Environmental Cell ◽  
High Resolution Structure ◽  
Commercially Important ◽  
Crystallographic Defects ◽  
Resolution Structure

The extended crystallographic defects introduced into some oxide catalysts under operating conditions may be a consequence and accommodation of the changes produced by the catalytic activity, rather than always being the origin of the reactivity. Operation without such defects has been established for the commercially important tellurium molybdate system. in addition it is clear that the point defect density and the electronic structure can both have a significant influence on the chemical properties and hence on the effectiveness (activity and selectivity) of the material as a catalyst. SEM/probe techniques more commonly applied to semiconductor materials, have been investigated to supplement the information obtained from in-situ environmental cell HVEM, ultra-high resolution structure imaging and more conventional AEM and EPMA chemical microanalysis.

Remote On-Line Control of a High-Voltage in situ Transmission Electron Microscope with A Rational User Interface

1996 ◽  
Vol 54 ◽  
pp. 384-385
Author(s):  
M.A. O’Keefe ◽  
J. Taylor ◽  
D. Owen ◽  
B. Crowley ◽  
K.H. Westmacott ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
User Interface ◽  
Transmission Electron Microscope ◽  
High Voltage ◽  
Materials Science ◽  
Transmission Electron ◽  
On Line ◽  
Electron Microscopes

Remote on-line electron microscopy is rapidly becoming more available as improvements continue to be developed in the software and hardware of interfaces and networks. Scanning electron microscopes have been driven remotely across both wide and local area networks. Initial implementations with transmission electron microscopes have targeted unique facilities like an advanced analytical electron microscope, a biological 3-D IVEM and a HVEM capable of in situ materials science applications. As implementations of on-line transmission electron microscopy become more widespread, it is essential that suitable standards be developed and followed. Two such standards have been proposed for a high-level protocol language for on-line access, and we have proposed a rational graphical user interface. The user interface we present here is based on experience gained with a full-function materials science application providing users of the National Center for Electron Microscopy with remote on-line access to a 1.5MeV Kratos EM-1500 in situ high-voltage transmission electron microscope via existing wide area networks. We have developed and implemented, and are continuing to refine, a set of tools, protocols, and interfaces to run the Kratos EM-1500 on-line for collaborative research. Computer tools for capturing and manipulating real-time video signals are integrated into a standardized user interface that may be used for remote access to any transmission electron microscope equipped with a suitable control computer.

Innovative Curriculum on Electronic Materials Processing and Engingeering

2001 ◽  
Vol 684 ◽  
Author(s):  
Jane P. Chang
Keyword(s):  
Semiconductor Manufacturing ◽  
Chemical Engineering ◽  
Materials Science ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Dynamic Environment ◽  
Complementary Metal Oxide Semiconductor ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Solid State Physics

Recognizing that the traditional engineering education training is often inadequate in preparing the students for the challanges presented by this industry's dynamic environment and insufficient to meet the empoyer's criteria in hiring new engineers, a new curriculum on Semiconductor Manufacturing is instituted in the Chemical Engineering Department at UCLA to train the students in various scientific and technologica areas that are pertinenet to the microelectronics industries. This paper describes this new mutidisciplinary curriculum that provides knowledge and skills in semiconductor manufacturing through a series ofcourses that emphasize on the application of fundamenta engineeering disciplines in solid-state physics, materials science of semiconductors, and chemical processing. The curriculum comprises three major components:(1)a comprehensive course curriculum in semiconductor manufacturing; (2) a laboratory for hands-on training in semiconductor device fabrication; (3) design of experiments. The capstone laboratory course is designed to strengthen students’ training in “unit operatins” used in semicounductor manufacturing and allow them to practice engineering principles using the state-of-the-art experimental setup. It comprises the most comprehensive training(seven photolithographic steps and numero0us chemical processes)in fabricating and testing complementary metal-oxide-semiconductor (CMOS) devices. This curriculum is recentyaccredited by the Accreditation Board for Engineering and Technology(ABET).

Application of In-Situ Mechanics Approach in Materials Science Problems

2020 ◽  
pp. 141-203
Author(s):  
Pranjal Nautiyal ◽  
Benjamin Boesl ◽  
Arvind Agarwal
Keyword(s):  
Materials Science

Multipurpose diffractometer for in situ X-ray crystallography of functional materials

2021 ◽  
Vol 54 (3) ◽  
Author(s):  
Semën Gorfman ◽  
David Spirito ◽  
Netanela Cohen ◽  
Peter Siffalovic ◽  
Peter Nadazdy ◽  
...  
Keyword(s):  
Electric Field ◽  
Materials Science ◽  
Functional Materials ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
X Ray Crystallography ◽  
Area Detector ◽  
Characterization Of Materials

Laboratory X-ray diffractometers play a crucial role in X-ray crystallography and materials science. Such instruments still vastly outnumber synchrotron facilities and are responsible for most of the X-ray characterization of materials around the world. The efforts to enhance the design and performance of in-house X-ray diffraction instruments benefit a broad research community. Here, the realization of a custom-built multipurpose four-circle diffractometer in the laboratory for X-ray crystallography of functional materials at Tel Aviv University, Israel, is reported. The instrument is equipped with a microfocus Cu-based X-ray source, collimating X-ray optics, four-bounce monochromator, four-circle goniometer, large (PILATUS3 R 1M) pixel area detector, analyser crystal and scintillating counter. It is suitable for a broad range of tasks in X-ray crystallography/structure analysis and materials science. All the relevant X-ray beam parameters (total flux, flux density, beam divergence, monochromaticity) are reported and several applications such as determination of the crystal orientation matrix and high-resolution reciprocal-space mapping are demonstrated. The diffractometer is suitable for measuring X-ray diffraction in situ under an external electric field, as demonstrated by the measurement of electric-field-dependent rocking curves of a quartz single crystal. The diffractometer can be used as an independent research instrument, but also as a training platform and for preparation for synchrotron experiments.

Monte Carlo simulation study of electron yields from compound semiconductor materials

2020 ◽  
Vol 128 (1) ◽  
pp. 015305
Author(s):  
A. Hussain ◽  
L. H. Yang ◽  
Y. B. Zou ◽  
S. F. Mao ◽  
B. Da ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Simulation Study ◽  
Compound Semiconductor ◽  
Semiconductor Materials ◽  
Monte Carlo Simulation Study
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