Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
L. F. Mulcue ◽  
W. de la Cruz ◽  
W. Saldarriaga
Keyword(s):  
Electrical Properties ◽  
Film Thickness ◽  
Room Temperature ◽  
Thin Layers ◽  
Structural And Electrical Properties

scholarly journals Graphene-Ionic Liquid Thin Film Nanolubricant

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 535 ◽  
Author(s):  
María-Dolores Avilés ◽  
Ramón Pamies ◽  
José Sanes ◽  
María-Dolores Bermúdez
Keyword(s):  
Ionic Liquid ◽  
Film Thickness ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Surface Damage ◽  
Thin Layers ◽  
Energy Dispersive Analysis ◽  
Lubricant Film Thickness ◽  
X Ray ◽  
Transmission Electron

Graphene (0.5 wt.%) was dispersed in the hydrophobic room-temperature ionic liquid 1-octyl-3-methylimidazolium bis(trifluoromethanesulfonyl) imide (IL) to obtain a new non-Newtonian (IL + G) nanolubricant. Thin layers of IL and (IL + G) lubricants were deposited on stainless steel disks by spin coating. The tribological performance of the new thin layers was compared with those of full fluid lubricants. Friction coefficients for neat IL were independent of lubricant film thickness. In contrast, for (IL + G) the reduction of film thickness not only afforded 40% reduction of the friction coefficient, but also prevented wear and surface damage. Results of surface profilometry, scanning and transmission electron microscopy (SEM and TEM), energy dispersive analysis (EDX), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were discussed.

Direct synthesis of thickness-tunable MoS2 quantum dot thin layers: Optical, structural and electrical properties and their application to hydrogen evolution

Nano Energy ◽  
2017 ◽  
Vol 35 ◽  
pp. 101-114 ◽  
Author(s):  
Dhanasekaran Vikraman ◽  
Kamran Akbar ◽  
Sajjad Hussain ◽  
Geonwook Yoo ◽  
Ji-Yun Jang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Dot ◽  
Hydrogen Evolution ◽  
Direct Synthesis ◽  
Thin Layers ◽  
Structural And Electrical Properties

Growth and Electrical Properties of PbMg0.047Nb0.095Zr0.416Ti0.442O3 Films Fabricated by Metalorganic Decomposition

2009 ◽  
Vol 421-422 ◽  
pp. 148-152
Author(s):  
Yuki Hasegawa ◽  
Masafumi Kobune ◽  
Yusuke Daiko ◽  
Atsushi Mineshige ◽  
Tetsuo Yazawa ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Film Thickness ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Structural And Electrical Properties ◽  
Transmission Electron Microscope Micrographs ◽  
Metalorganic Decomposition ◽  
Highly Uniform

On the basis of experimental data on the piezoelectric pinpoint composition of ceramics of the ternary system Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3 (PMNZT), which we investigated in our previous report, epitaxial PbMg0.047Nb0.095Zr0.416Ti0.442O3 thick films with thicknesses ranging from 0.4 to 1.9 m were fabricated on Pt(100)/MgO(100) substrates by metalorganic decomposition. The film- thickness dependence on the structural and electrical properties (dielectric, piezoelectric and ferroelectric properties) was investigated. All PMNZT films exhibited a highly uniform (001) orientation, regardless of the film thickness. The cross-sectional transmission electron microscope micrographs and all the physical data suggest that high-density PMNZT thick films with a thickness  1.0 m can be expected to function as highly electrically insulating capacitors with high potential for piezo- and ferroelectric applications.

The Effect of Formation Conditions on the Structural and Electrical Properties of Ultrathin Cobalt Silicide Films

1987 ◽  
Vol 102 ◽  
Author(s):  
Julia M. Phillips ◽  
J. L. Batstone ◽  
J. C. Hensel ◽  
M. Cerullo ◽  
F. C. Unterwald
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Residual Resistivity ◽  
Cobalt Silicide ◽  
Plan View ◽  
Structural And Electrical Properties ◽  
Different Temperatures ◽  
Formation Conditions

ABSTRACTWe have studied the dependence of the structural and electrical properties of ultrathin cobalt silicide films on the annealing temperature and deposited Co thickness.We recently reported that coherent, electrically continuous films of CoSi2 could be grown on Si(111) with thicknesses as small as 1 nm.1 The thinnest of these films had a high density of pinholes which covered about 20% of the area of the substrate. The resistivity of the films increased dramatically with decreasing thickness in a manner which was qualitatively consistent with quantum size effects. In order to investigate the dependence of both the pinhole density and the resistivity of ultrathin CoSi2 films on Si(111), we have deposited different thicknesses of Co onto near room temperature (<100°C) Si(111) substrates and have annealed the samples at different temperatures in order to study the effect of silicide formation conditions on the structural and electrical properties of the resulting films.Co layers were deposited onto Si(111) wafers in a molecular beam epitaxy apparatus as described previously.1 In our earlier work, CoSi2 was formed by heating the sample to ∼600°C for a few seconds after Co deposition. Because higher temperature anneals are known to lead to pinhole formation in thicker films,2 annealing temperatures in the present experiments were constrained to be 600° or less. The reaction time was on the order of 5 minutes. The layers were examined using plan-view transmission electron microscopy (TEM) in order to avoid beam heating and ion beam mixing effects which might cause artefacts in cross-section TEM observation.The results of our experiments are summarized in Figure 1. The figure indicates the silicide phases found in a film as a function of deposited Co thickness and annealing temperature. The numbers in each square correspond to the residual resistivity, ρo, measured for each film. Perhaps the most striking finding of this study is the abrupt change in the structure of the films between 0.7 and 1.4 nm of deposited Co. For all temperatures investigated (including near room temperature), films formed by depositing less than 1 nm of Co form CoSi2 immediately upon deposition. (For films approaching this thickness, there is also a small amount of Co2Si which persists at all temperatures

Temperature dependence of epitaxial growth of Al on Si(111) by chemical vapor deposition

1992 ◽  
Vol 7 (2) ◽  
pp. 345-351 ◽  
Author(s):  
Satoshi Nishikawa ◽  
Kouichi Tani ◽  
Tetsuo Yamaji
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Flat Surface ◽  
Chemical Vapor ◽  
Aluminum Films ◽  
Initial Stage ◽  
Structural And Electrical Properties

Chemical vapor deposition of aluminum films using tri-isobutyl aluminum on Si(111) wafers has been studied from the viewpoint of structural and electrical properties of Al films as a function of substrate temperature (Ts). The epitaxial relation of Al on Si is found to be very sensitive to Ts, thus changing from Al(100)))Si(111) with Al[1$\overline 1$0]))Si[11$\overline 1$] to Al(111)))Si(111) with Al[1$\overline 1$0]))Si[1$\overline 1$0] around 410 °C in the course of increasing Ts. The epitaxial relation is mainly determined at the initial stage of the deposition, but in some cases the relation changes with increasing film thickness. Above 420 °C, single-crystalline Al(111) is grown on Si(111), which has resistivity as low as the bulk value, high reflectivity, and a very flat surface.

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