Driving and detection system of vibrating piezoelectric gyroscope at atmospheric pressure for multi-axial inertia sensor

2019 ◽  
Vol 25 (11) ◽  
pp. 4173-4183
Author(s):  
Byengleul Lee ◽  
Seung-Joon Paik ◽  
Kyunghan Chun ◽  
Bonghwan Kim
1974 ◽  
Vol 46 (6) ◽  
pp. 706-710 ◽  
Author(s):  
D. I. Carroll ◽  
I. Dzidic ◽  
R. N. Stillwell ◽  
M. G. Horning ◽  
E. C. Horning

2015 ◽  
Vol 30 (3) ◽  
pp. 352-358 ◽  
Author(s):  
Bob Hommersom ◽  
Sarfaraz U. A. H. Syed ◽  
Gert B. Eijkel ◽  
David P. A. Kilgour ◽  
David R. Goodlett ◽  
...  

1973 ◽  
Vol 45 (6) ◽  
pp. 936-943 ◽  
Author(s):  
E. C. Horning ◽  
M. G. Horning ◽  
D. I. Carroll ◽  
I. Dzidic ◽  
R. N. Stillwell

1978 ◽  
Vol 50 (14) ◽  
pp. 2112-2118 ◽  
Author(s):  
Bruce D. Quimby ◽  
Peter C. Uden ◽  
Ramon M. Barnes

Author(s):  
J. B. Warren

Electron diffraction intensity profiles have been used extensively in studies of polycrystalline and amorphous thin films. In previous work, diffraction intensity profiles were quantitized either by mechanically scanning the photographic emulsion with a densitometer or by using deflection coils to scan the diffraction pattern over a stationary detector. Such methods tend to be slow, and the intensities must still be converted from analog to digital form for quantitative analysis. The Instrumentation Division at Brookhaven has designed and constructed a electron diffractometer, based on a silicon photodiode array, that overcomes these disadvantages. The instrument is compact (Fig. 1), can be used with any unmodified electron microscope, and acquires the data in a form immediately accessible by microcomputer.Major components include a RETICON 1024 element photodiode array for the de tector, an Analog Devices MAS-1202 analog digital converter and a Digital Equipment LSI 11/2 microcomputer. The photodiode array cannot detect high energy electrons without damage so an f/1.4 lens is used to focus the phosphor screen image of the diffraction pattern on to the photodiode array.


Author(s):  
P. Trebbia ◽  
P. Ballongue ◽  
C. Colliex

An effective use of electron energy loss spectroscopy for chemical characterization of selected areas in the electron microscope can only be achieved with the development of quantitative measurements capabilities.The experimental assembly, which is sketched in Fig.l, has therefore been carried out. It comprises four main elements.The analytical transmission electron microscope is a conventional microscope fitted with a Castaing and Henry dispersive unit (magnetic prism and electrostatic mirror). Recent modifications include the improvement of the vacuum in the specimen chamber (below 10-6 torr) and the adaptation of a new electrostatic mirror.The detection system, similar to the one described by Hermann et al (1), is located in a separate chamber below the fluorescent screen which visualizes the energy loss spectrum. Variable apertures select the electrons, which have lost an energy AE within an energy window smaller than 1 eV, in front of a surface barrier solid state detector RTC BPY 52 100 S.Q. The saw tooth signal delivered by a charge sensitive preamplifier (decay time of 5.10-5 S) is amplified, shaped into a gaussian profile through an active filter and counted by a single channel analyser.


Author(s):  
N. F. Ziegler

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.


Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).


Author(s):  
Huang Min ◽  
P.S. Flora ◽  
C.J. Harland ◽  
J.A. Venables

A cylindrical mirror analyser (CMA) has been built with a parallel recording detection system. It is being used for angular resolved electron spectroscopy (ARES) within a SEM. The CMA has been optimised for imaging applications; the inner cylinder contains a magnetically focused and scanned, 30kV, SEM electron-optical column. The CMA has a large inner radius (50.8mm) and a large collection solid angle (Ω > 1sterad). An energy resolution (ΔE/E) of 1-2% has been achieved. The design and performance of the combination SEM/CMA instrument has been described previously and the CMA and detector system has been used for low voltage electron spectroscopy. Here we discuss the use of the CMA for ARES and present some preliminary results.The CMA has been designed for an axis-to-ring focus and uses an annular type detector. This detector consists of a channel-plate/YAG/mirror assembly which is optically coupled to either a photomultiplier for spectroscopy or a TV camera for parallel detection.


Author(s):  
L.D. Schmidt ◽  
K. R. Krause ◽  
J. M. Schwartz ◽  
X. Chu

The evolution of microstructures of 10- to 100-Å diameter particles of Rh and Pt on SiO2 and Al2O3 following treatment in reducing, oxidizing, and reacting conditions have been characterized by TEM. We are able to transfer particles repeatedly between microscope and a reactor furnace so that the structural evolution of single particles can be examined following treatments in gases at atmospheric pressure. We are especially interested in the role of Ce additives on noble metals such as Pt and Rh. These systems are crucial in the automotive catalytic converter, and rare earths can significantly modify catalytic properties in many reactions. In particular, we are concerned with the oxidation state of Ce and its role in formation of mixed oxides with metals or with the support. For this we employ EELS in TEM, a technique uniquely suited to detect chemical shifts with ∼30Å resolution.


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