Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications
2018 ◽
Vol 39
(12)
◽
pp. 1888-1891
◽
Keyword(s):
A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs
2012 ◽
Vol 4
(3)
◽
pp. 267-274
◽
Keyword(s):
V Band
◽
1997 ◽
Vol 161
◽
pp. 711-717
◽
Keyword(s):
Keyword(s):
1981 ◽
Vol 20
(02)
◽
pp. 80-96
◽
1991 ◽
Vol 197
(3-4)
◽
Keyword(s):
2011 ◽
Vol 131
(8)
◽
pp. 1397-1402
Keyword(s):
2014 ◽
Vol 03
(10)
◽
pp. 16475-16479
2016 ◽
Vol 6
(1)
◽
pp. 56