scholarly journals Structural, optical, and electrical characterization of spray-deposited Mg0.02Zn0.98Se thin film for buffer layer application

2021 ◽  
Author(s):  
V. S. Ganesha Krishna ◽  
M. G. Mahesha
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Visible Region ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Raman Study ◽  
Mg Doped

AbstractIn this work, spray-deposited Mg0.02Zn0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 1011 cm− 3. Mg0.02Zn0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.

Structural, Morphological, Optical, and Electrical Characterization of Fluorine Doped Tin Oxide (FTO) Thin Films Synthesized by PSP

2019 ◽  
Vol 286 ◽  
pp. 64-71 ◽  
Author(s):  
Raquel Ramírez-Amador ◽  
Gregorio Flores-Carrasco ◽  
Salvador Alcántara-Iniesta ◽  
Julio Rodríguez González ◽  
Ogilver García-Teniza ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Visible Region ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Maximum Value ◽  
Uv Visible

This paper reports a study of Fluorine-doped Tin Oxide (FTO) thin films deposited by the Pneumatic Spray Pyrolysis (PSP) technique. The films were deposited on glass substrates at 450 °C with a ~125 nm thickness, using an F/Sn ratio of 0, 0.2, 0.35, 0.5, 0.65 and 0.85, respectively. The samples were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-visible Spectroscopy and Hall Effect techniques, respectively. XRD results revealed that the FTO thin films were polycrystalline with a tetragonal rutile-type structure and had preferential orientations along (110) planes. SEM studies showed that FTO thin film morphology was totally affected by an increased F/Sn ratio. The calculated grain mean sizes were 10-35 nm. Optical transmittance spectra of the films showed a high transparency of approximately 80-90 % in the visible region. The optical gap of FTO thin films was in a 3.70-4.07 eV range. Electrical and optical properties of these films were studied as a function of the F/Sn ratio. Therefore, the optimal FTO (F/Sn = 0.5) films revealed a maximum value of the figure of merit approximately 8.05 × 10-3 (Ω-1) at λ = 400 nm. The high-conducting and transparent-elaborating FTO thin films may have several promising applications due to its multifunctional properties.

IMPROVED CAPACITIVE BEHAVIOR OF MnO2 THIN FILMS PREPARED BY ELECTRODEPOSITION ON THE PT SUBSTRATE WITH A MnOx BUFFER LAYER

2009 ◽  
Vol 02 (01) ◽  
pp. 13-18 ◽  
Author(s):  
H. XIA ◽  
W. XIAO ◽  
M. O. LAI ◽  
L. LU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Rate Capability ◽  
Reference Electrode ◽  
Cycle Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Supercapacitor Application

Nanostructured MnO 2 thin films were prepared on two types of substrates, Pt / Ti / SiO 2/ Si (PT) and MnO x/ Pt / Ti / SiO 2/ Si ( MnO x/ PT ), by the technique of cyclic-voltammetric electrodeposition. The MnO x buffer layer was deposited on the PT substrate by pulsed laser deposition (PLD). The as-deposited MnO 2 thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and X-ray photoelectron spectroscopy (XPS). The electrochemical properties of the thin film MnO 2 electrodes were investigated using cyclic voltammetry (CV) in 1 M Na 2 SO 4 electrolyte. It was found that the adhesion between the MnO 2 film and the Pt substrate was poor, resulting in cracks and peeling of the MnO 2 film after deposition. However, the adhesion of the MnO 2 film with the MnO x buffer layer was greatly improved, resulting in superior pseudocapacitive performance of the thin film electrodes. A specific capacitance of about 364 F/g of MnO 2 thin films deposited on the MnO x buffer layer can be obtained at a scan rate of 10 mV/s in the voltage window between 0 and 0.9 V versus the Ag / AgCl reference electrode. The MnO 2 thin film deposited on the MnO x/ PT substrate exhibits good rate capability and excellent cycle performance, which makes it promising for supercapacitor application.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

DEPOSITION ON VICINAL SUBSTRATES FOR DOMAIN SELECTION IN YBa2Cu3O7 FILMS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2646-2651
Author(s):  
F. RICCI ◽  
F. CARILLO ◽  
F. LOMBARDI ◽  
F. MILETTO GRANOZIO ◽  
U. SCOTTI DI UCCIO ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Space Mapping ◽  
X Ray Diffraction ◽  
Vicinal Surfaces ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Growth Properties ◽  
Domain Selection ◽  
Film Substrate

(110) and (103) YBa 2 Cu 3 O 7 films have been grown onto exact and vicinal (110) SrTiO 3 substrates, and on vicinal (110) MgO substrates with a SrTiO 3 buffer layer. The samples are carefully characterised by reciprocal space mapping with x-ray diffraction, in order to investigate the features of the typical double domain of (110) and (103) YBa 2 Cu 3 O 7 structure. It is demonstrated that vicinal cut substrates allow to select one film/substrate epitaxial relation. The growth properties of these thin films deposited on vicinal surfaces are discussed.

scholarly journals Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Gyu-bong Cho ◽  
Tae-hoon Kwon ◽  
Tae-hyun Nam ◽  
Sun-chul Huh ◽  
Byeong-keun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Properties ◽  
Discharge Capacity ◽  
Oxygen Deficiency ◽  
Oxide Phase ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Nickel Oxide

LiNiO2thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2thin film. The ZrO2-coated LiNiO2thin film provided an improved discharge capacity compared to bare LiNiO2thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2coating layer.

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Abid ◽  
C. Terrier ◽  
J-P Ansermet ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behaviour ◽  
Spectroscopic Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped ◽  
Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

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