Impact of CdZnTe Substrates on MBE HgCdTe Deposition

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

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Vertical bridgman techniques to homogenize zinc composition of CdZnTe substrates

Journal of Electronic Materials ◽

10.1007/bf02653053 ◽

1995 ◽

Vol 24 (9) ◽

pp. 1057-1059 ◽

Cited By ~ 6

Author(s):

T. S. Lee ◽

S. B. Lee ◽

J. M. Kim ◽

J. S. Kim ◽

S. H. Suh ◽

...

Keyword(s):

Vertical Bridgman ◽

Cdznte Substrates

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Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

MRS Proceedings ◽

10.1557/proc-102-77 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

P.-Y. Lu ◽

L. M. Williams ◽

C.-H. Wang ◽

S. N. G. Chu ◽

M. H. Ross

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Infrared Transmission ◽

Chemical Vapor Deposition Growth ◽

Deposition Processes ◽

Cdznte Substrates ◽

First Time ◽

Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

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Mapping of CdZnTe substrates and CdHgTe epitaxial layers by X-ray diffraction

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00732-4 ◽

1997 ◽

Vol 172 (1-2) ◽

pp. 97-105 ◽

Cited By ~ 14

Author(s):

T. Skauli ◽

T. Colin ◽

S. Løvold

Keyword(s):

Epitaxial Layers ◽

X Ray Diffraction ◽

X Ray ◽

Cdznte Substrates

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Material quality characterization of CdZnTe substrates for HgCdTe epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-006-0291-x ◽

2006 ◽

Vol 35 (6) ◽

pp. 1495-1502 ◽

Cited By ~ 13

Author(s):

G. A. Carini ◽

C. Arnone ◽

A. E. Bolotnikov ◽

G. S. Camarda ◽

R. De Wames ◽

...

Keyword(s):

Material Quality ◽

Cdznte Substrates

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Descending Infrared Transmission Spectra of CdZnTe Substrates Due to Surface Roughness

Journal of Electronic Materials ◽

10.1007/s11664-019-07339-8 ◽

2019 ◽

Vol 48 (10) ◽

pp. 6152-6158 ◽

Cited By ~ 1

Author(s):

E. Selvig ◽

K. O. Kongshaug ◽

R. Haakenaasen ◽

T. Lorentzen ◽

T. Brudevoll

Keyword(s):

Surface Roughness ◽

Transmission Spectra ◽

Infrared Transmission ◽

Cdznte Substrates

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Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates

Journal of Electronic Materials ◽

10.1007/s11664-000-0206-1 ◽

2000 ◽

Vol 29 (6) ◽

pp. 687-690 ◽

Cited By ~ 12

Author(s):

T. Skauli ◽

T. Colin ◽

R. Sjølie ◽

S. Løvold

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Relaxation Behavior ◽

Cdznte Substrates

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The Wet Etching of CdZnTe Substrates for OMVPE Growth

MRS Proceedings ◽

10.1557/proc-259-275 ◽

1992 ◽

Vol 259 ◽

Cited By ~ 1

Author(s):

T.W. Chan ◽

X.J. Bao ◽

I.H. Oh ◽

P.J. Sides ◽

E.I. Ko

Keyword(s):

Defect Density ◽

Orange Peel ◽

Wet Etching ◽

Organometallic Vapor Phase Epitaxy ◽

Volume Percent ◽

Substrate Orientation ◽

Methanol Solutions ◽

Bromine Concentration ◽

Cdte Films ◽

Cdznte Substrates

ABSTRACTThe etching of CdZnTe substrates by bromine-methanol solutions was studied by chemi-mechanical polishing. Over a bromine concentration of 0.5 to 3.5 volume percent, the etch rates varied linearly with bromine concentration, were independent of substrate orientation, and, within experimental uncertainties, were identical to those for the etching of CdTe. The etched samples were used as substrates for the organometallic vapor phase epitaxy (OMVPE) growth of CdTe in an impinging jet reactor. The bromine concentration used in etching did not affect the growth rate or the morphology of the deposited CdTe films, but a higher defect density was found for the film grown on a substrate with the orange-peel structure.

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Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Opto-Electronics Review ◽

10.2478/s11772-010-1016-9 ◽

2010 ◽

Vol 18 (3) ◽

Cited By ~ 4

Author(s):

I.I. Izhnin ◽

I.A. Denisov ◽

N.A. Smirnova ◽

M. Pociask ◽

K.D. Mynbaev

Keyword(s):

Liquid Phase ◽

Thermal Treatment ◽

Liquid Phase Epitaxy ◽

Defect Structure ◽

Molecular Beam ◽

Donor Concentration ◽

Ion Milling ◽

High Concentration ◽

Low Temperature Annealing ◽

Cdznte Substrates

AbstractIon milling, as a tool for “stirring” defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual donor concentration (∼1014 cm−3), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet eventually brings the material to an “equilibrium” state with defect concentration lower than that after low-temperature annealing.

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