Electrical characteristics of top contact pentacene organic thin film transistors with SiO2 and poly(methyl methacrylate) as gate dielectrics

Pramana ◽  
2008 ◽  
Vol 71 (3) ◽  
pp. 579-589 ◽  
Author(s):  
Jaya Lohani ◽  
Praveen Saho ◽  
Upender Kumar ◽  
V. R. Balakrishnan ◽  
P. K. Basu
Polymers ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 1231 ◽  
Author(s):  
Alexander J. Peltekoff ◽  
Mathieu N. Tousignant ◽  
Victoria E. Hiller ◽  
Owen A. Melville ◽  
Benoît H. Lessard

A library of statistically random pentafluorostyrene (PFS) and methyl methacrylate (MMA) copolymers with narrow molecular weight distributions was produced, using nitroxide mediated polymerization (NMP) to study the effect of polymer composition on the performance of bottom-gate top-contact organic thin-film transistors, when utilized as the dielectric medium. Contact angle measurements confirmed the ability to tune the surface properties of copolymer thin films through variation of its PFS/MMA composition, while impedance spectroscopy determined the effect of this variation on dielectric properties. Bottom-gate, top-contact copper phthalocyanine (CuPc) based organic thin-film transistors were fabricated using the random copolymers as a dielectric layer. We found that increasing the PFS content led to increased field-effect mobility, until a point after which the CuPc no longer adhered to the polymer dielectric.


2008 ◽  
Vol 8 (9) ◽  
pp. 4679-4683 ◽  
Author(s):  
Chaun Gi Choi ◽  
Byeong-Soo Bae

Solution processable and photo-patternable titanium doped organic–inorganic hybrid material (MDT hybrimer) was prepared by simple sol–gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV cross-linking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm2V−1s−1, −14 V, 1.6 Vdec.−1, and 3 × 106, respectively.


2009 ◽  
Vol 10 (8) ◽  
pp. 1596-1600 ◽  
Author(s):  
Youngjun Yun ◽  
Christopher Pearson ◽  
Duncan H. Cadd ◽  
Richard L. Thompson ◽  
Michael C. Petty

2015 ◽  
Vol 2 (2) ◽  
pp. 1500209 ◽  
Author(s):  
Hyejeong Seong ◽  
Kwanyong Pak ◽  
Munkyu Joo ◽  
Junhwan Choi ◽  
Sung Gap Im

Author(s):  
Kuo-Tong Lin ◽  
Chia-Hsun Chen ◽  
Ming-Huan Yang ◽  
Yuh-Zheng Lee ◽  
Kevin Cheng

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