Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design

Silicon ◽  
2020 ◽  
Author(s):  
Aishwarya Kaity ◽  
Sangeeta Singh ◽  
P. N. Kondekar
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Resilient Design ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

GeSn/GeSiSn double-heterojunction short channel tunnel field-effect transistor design

2020 ◽  
Vol 59 (3) ◽  
pp. 034001
Author(s):  
Suyuan Wang ◽  
Qiang Wu ◽  
Jun Zheng ◽  
Bin Zhang ◽  
Jianghong Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Short Channel ◽  
Double Heterojunction ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals Performance Analysis of Vertically Stacked Nanosheet Tunnel Field Effect Transistor with Ideal Subthreshold Swing

2021 ◽  
Author(s):  
Garima Jain ◽  
Ravinder Singh Sawhney ◽  
Ravinder Kumar ◽  
Amit Saini
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Subthreshold Swing ◽  
Short Channel ◽  
Tunneling Mechanism ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Abstract In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to a gate length of 12nm with Contact poly pitch (CPP) of 48nm is simulated. NS-TFET device is investigated for its electrostatics characteristics using technology computer-aided design (TCAD) simulator. The inter-band tunneling mechanism with a P-I-N layout has been incorporated in the stacked nanosheet devices. The asymmetric design technique for doping has been used for optimum results. NS-TFET provides a low leakage current of order10-16 A, an excellent subthreshold swing (SW) of 23mv/decade, and negligible drain induced barrier lowering (DIBL) having a value of 10.5 mv/V. The notable ON to OFF current ratio of the order of 1011 has been achieved. The device exhibits a high transconductance of 3.022x10-5 S at the gate to source voltage of 1V. NS-TFET shows tremendous improvement in short channel effects (SCE) and is a good option for advanced technologies.

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

2015 ◽  
Vol 14 (03) ◽  
pp. 1450025 ◽  
Author(s):  
Yogesh Goswami ◽  
Pranav Asthana ◽  
Shibir Basak ◽  
Bahniman Ghosh
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Threshold Voltage ◽  
Indium Antimonide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Short Channel ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
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